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81.
烷基硫酸盐表面张力的量子化学研究 总被引:1,自引:0,他引:1
用AMl量子化学计算法优化了十三烷基硫酸根阴离子和——CH3在不同取代位的十二烷基硫酸根阴离子的几何构型,得到最优构型时最高占据分子轨道能级EHOMO、最低空轨道能级ELUMO、电子能量Eele和偶极矩μ等数据.将这些电子结构数据分别与表面张力相拟合,得到很好的相关性。文中讨论了——CH3在不同位置取代对表面张力的影响。 相似文献
82.
本文首先将文[1]中的BLD映射推广为弱(L1,L2)-BLD映射,并证明了如下正则性结果:存在两个可积指数 P1=P1(n,L1,L2)<n<q1=q1(n,L1,L2),使得对任意弱(L1,L2)-BLD映射f∈(Ω,Rn),都有f∈(Ω,Rn),即f为(L1,L2)-BLD映射. 相似文献
83.
The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer 总被引:4,自引:0,他引:4
X.Y. Chen K.H. Wong C.L. Mak J.M. Liu X.B. Yin M. Wang Z.G. Liu 《Applied Physics A: Materials Science & Processing》2002,75(4):545-549
Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find
that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111)
and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions
of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were
of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented,
(100)-oriented and polycrystalline LNO, respectively.
Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002 相似文献
84.
Nicolas Bergeron 《Mathematische Zeitschrift》2002,241(1):101-125
Let M be an arithmetic hyperbolic manifold and be a codimension 1 geodesic cycle. In this paper, we study the asymptotic growth of the -norm of the lifts of F in the congruence tower above M. We obtain an explicit value for the growth rate of this norm. In particular, we provide a new proof of a celebrated result
of Millson [Mi] on the homology of the arithmetic hyperbolic manifolds. The method is quite general and gives a new way of
getting non zero homology classes in certain locally symmetric spaces.
Received: 20 April 2001; in final form: 26 September 2001 / Published online: 28 February 2002 相似文献
85.
Patrick Dehornoy 《Algebra Universalis》2002,48(2):223-248
We solve the word problem of the identity x(yz) = (xy)(yz) by investigating a certain group describing the geometry of that identity. We also construct a concrete realization of the
one-generated free algebra relative to the above identity.
Received March 23, 2001; accepted in final form July 6, 2002. 相似文献
86.
Chuanming Zong 《Monatshefte für Mathematik》2002,134(3):247-255
In this article we study the simultaneous packing and covering constants of two-dimensional centrally symmetric convex domains.
Besides an identity result between translative case and lattice case and a general upper bound, exact values for some special
domains are determined. Similar to Mahler and Reinhardt’s result about packing densities, we show that the simultaneous packing
and covering constant of an octagon is larger than that of a circle.
(Received 17 January 2001; in revised form 13 July 2001) 相似文献
87.
Various techniques for building relaxations and generating valid inequalities for pure or mixed integer programming problems without special structure are reviewed and compared computationally. Besides classical techniques such as Gomory cuts, Mixed Integer Rounding cuts, lift-and-project and reformulation–linearization techniques, a new variant is also investigated: the use of the relaxation corresponding to the intersection of simple disjunction polyhedra (i.e. the so-called elementary closure of lift-and-project cuts). Systematic comparative computational results are reported on series of test problems including multidimensional knapsack problems (MKP) and MIPLIB test problems. From the results obtained, the relaxation based on the elementary closure of lift-and-project cuts appears to be one of the most promising. 相似文献
88.
Kouichi Akahane Naokatsu Yamamoto Naoki Ohtani 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):295
We fabricated InAs quantum dots (QDs) with a GaAsSb strain-reducing layer (SRL) on a GaAs(0 0 1) substrate. The wavelength of emission from InAs QD is shown to be controllable by changing the composition and thickness of the SRL. An increase in photoluminescence intensity with increasing compositions of Sb and thickness of the GaAsSb SRL is also seen. The efficiency of radiative recombination was improved under both conditions because the InAs/GaAsSb/GaAs hetero-interface band structure more effectively suppressed carrier escape from the InAs QDs. 相似文献
89.
S. J. Cheng W. Sheng P. Hawrylak S. Raymond S. Studenikin A. Sachrajda Z. Wasilewski A. Babinski M. Potemski G. Ortner M. Bayer 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):211
We present results of calculations and experiments on electron–hole complexes in InGaAs/GaAs self-assembled quantum dots in high magnetic field (B). Due to hidden symmetries, the chemical potential of an N-exciton system at special B fields becomes insensitive to the exciton number as well as the magnetic field. This results in plateau regions of high intensity in measured magneto-PL spectrum. Theoretical calculations using exact diagonalization techniques successfully explain the measured magneto-photoluminescence spectrum with B fields up to 28 T. 相似文献
90.
We extend the matrix version of Cochran's statistical theorem to outer inverses of a matrix. As applications, we investigate the Wishartness and independence of matrix quadratic forms for Kronecker product covariance structures. 相似文献