VRPTW的扰动恢复及其TABU SEARCH算法

本文对带时间窗的车辆路线安排扰动恢复问题进行了讨论,分析了各种可能的扰动:增加减少客户,时间窗、客户需求及路线可行性的扰动,构造了扰动模型.利用禁忌搜索算法对问题进行求解,同时通过对模型参数重新设置,得到了多个满足要求的不同的解,这样使解更具有实际可行性和有效性.     

Attractors for a Three-Dimensional Thermo-Mechanical Model of Shape Memory Alloys

Abstract In this note, we consider a Frémond model of shape memory alloys. Let us imagine a piece of a shape memory alloy which is fixed on one part of its boundary, and assume that forcing terms, e.g., heat sources and external stress on the remaining part of its boundary, converge to some time-independent functions, in appropriate senses, as time goes to infinity. Under the above assumption, we shall discuss the asymptotic stability for the dynamical system from the viewpoint of the global attractor. More precisely, we generalize the paper [12] dealing with the one-dimensional case. First, we show the existence of the global attractor for the limiting autonomous dynamical system; then we characterize the asymptotic stability for the non-autonomous case by the limiting global attractor. * Project supported by the MIUR-COFIN 2004 research program on “Mathematical Modelling and Analysis of Free Boundary Problems”.     

Simulation of a High Harmonic Gyrotron with Axis-Encircling Electron Beam and Permanent Magnet

A computer code for simulation of beam-field interaction in a resonant cavity of a gyrotron has been developed. It is based on a self-consistent, time-independent, single-mode physical model. The code has been applied to the analysis of the electrodynamical system of a novel high-harmonic gyrotron with axis-encircling beam and a permanent magnet. In this paper both the physical model and numerical techniques used are outlined. Some results of the numerical experiments are presented and discussed.     

B_2分子X~3Σ_g~-和A~3Σ_u~-态的势能函数

使用SAC/SAC-CI方法,利用D95(d),6-311g**以及cc-PVTZ等基组,对B2分子的基态(X3Σg-)和第一激发态(A3Σu-)的平衡结构和谐振频率进行了优化计算.通过对3个基组的计算结果的比较,得出了D95(d)基组为3个基组中的最优基组的结论;使用D95(d)基组,利用SAC的GSUM(Group Sum of Operators)方法对基态(X3Σg-),SAC-CI的GSUM方法对激发态(A3Σu-)进行单点能扫描计算,用正规方程组拟合Murrell-Sorbie函数,得到了相应电子态的完整势能函数;从得到的势能函数计算了与基态(X3Σg-)和第一激发态(A3Σu-)相对应的光谱常数(Be,αe,ωe和ωeχe),结果与实验数据吻合.     

设计性、研究性实验对学生创新能力的培养

根据设计性、研究性实验的特点,从几个方面、不同的角度,阐述了设计性、研究性实验对学生创新能力培养的作用与意义。     

一种新的奇偶非线性相干态的位相统计性质

根据Pegg-Barnett位相定义, 计算了一种新的奇偶非线性相干态的位相概率分布函数, 利用数值计算方法研究了它们的位相统计性质. 数值计算结果表明：新的奇偶非线性相干态的位相特性与通常奇偶相干态的位相特性截然不同.     

Focusing and diffraction by an optical lens and a small circular aperture

Based on the vectorial Rayleigh–Sommerfeld diffraction integrals, analytical expressions for the transversal and axial field distribution of plane waves propagating through a thin lens followed by a small circular aperture are derived and used to study the focusing and diffraction properties of plane waves. Some special cases of our general result are discussed, and illustrative numerical calculation results are given. It is found that the vectorial nonparaxial approach should be applied if the aperture dimension is comparable with the wavelength or the focusing is strong.     

Surface structures formed by individual adsorption and coadsorption of Mn and Bi on Cu(0 0 1), studied by LEED

We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi₄ clusters are arranged in the top Cu layer instead of MgBi₄. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment.     

Challenging Students to View the Concept of Area in Triangles in a Broad Context: Exploiting the Features of Cabri-II

This study focuses on the constructions in terms of area and perimeter in equivalent triangles developed by students aged 12–15 years-old, using the tools provided by Cabri-Geometry II [Labore (1990). Cabri-Geometry (software), Université de Grenoble]. Twenty-five students participated in a learning experiment where they were asked to construct: (a) pairs of equivalent triangles “in as many ways as possible” and to study their area and their perimeter using any of the tools provided and (b) “any possible sequence of modifications of an original triangle into other equivalent ones”. As regards the concept of area and in contrast to a paper and pencil environment, Cabri provided students with different and potential opportunities in terms of: (a) means of construction, (b) control, (c) variety of representations and (d) linking representations, by exploiting its capability for continuous modifications. By exploiting these opportunities in the context of the given open tasks, students were helped by the tools provided to develop a broader view of the concept of area than the typical view they would construct in a typical paper and pencil environment.     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.