Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-ν_net discontinuous. Under tilted magnetic fields, these R_xx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.     

A hybrid-Trefftz element containing an elliptic hole

Much work on special elements that simplify geometrical modelling of structures containing holes, cracks and/ or inclusions has been reported extensively in the literature. This paper presents a hybrid-Trefftz element containing elliptic hole formulated using Hellinger–Reissner principle by employing trial functions based on the mapping technique and the Cauchy integral method. The element presented in this paper could be regarded as an improved formulation over Piltner [Special finite elements with holes and internal cracks, Int. J. Numer. Methods Eng. 21 (1985) 1471–1485] element because the chosen trail functions in this paper have provided relatively more stable solutions. The use of the element with other ordinary displacement-based finite elements has also yielded very accurate solutions even when very coarse meshes relative to the size of the elliptic hole have been used.     

动态广义球对称含荷黑洞的统计熵

利用改进了的brickwall膜模型,计算了动态广义球对称含荷黑洞的熵,研究结果表明,对于动态黑洞,将黑洞熵表示为与视界面积成正比时,则比例系数总与动态黑洞的视界速度有关 关键词： 广义球对称黑洞 黑洞熵 brick-wall膜模型 WKB近似     

Synthesis and optical properties of a poly(p‐phenylenevinylene) derivative and polyfluorenes with bipolar groups along the main chain

A poly(p‐phenylenevinylene) derivative (PPV–TPA)] and a series of statistical copolyfluorenes (PF–TPA)] containing oxadiazole and triphenylamine segments along the main chain were synthesized by the Heck reaction and nickel‐mediated coupling, respectively. The PF–TPA copolyfluorenes with relatively low contents of oxadiazole and triphenylamine units were readily soluble in common organic solvents, whereas the other copolyfluorenes displayed lower solubility. PPV–TPA showed excellent solubility in solvents such as tetrahydrofuran (THF), dichloromethane, chloroform, and toluene. Thin films of the polymers absorbed light in the range of 375–396 nm and had optical band gaps of 2.76–2.98 eV. They emitted blue‐green light with a maximum at 414–522 nm. The fluorescence quantum yields in THF solutions were 0.08–0.53. The copolyfluorene PF–TPA thin films with high contents of oxadiazole and triphenylamine moieties emitted pure blue light that remained stable even after annealing at 150 °C for 4 h in air. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3556–3566, 2006     

炭黑填充聚乙烯材料电阻—温度特性研究

研究了炭黑／聚乙烯导电复合材料的ＰＴＣ特性及在不同条件下的电阻变化。发现ＰＴＣ特性与体积膨胀及聚乙烯晶相的熔融有许多一致性。认为材料的体积膨胀及聚乙烯晶相熔融时炭黑颗粒均匀化扩散导致了电阻随温度上升。在较高温度下，炭黑颗粒在分子链段热运动的推动下会发生相对聚集使电阻不断减小，这是材料出现ＮＴＣ现象的原因。材料总的电阻温度特性是体积膨胀、炭黑向聚乙烯熔融区扩散及相互聚集三个因素共同作用的结果。     

Conductive polyethylene-carbon black composites by elongational-flow injection molding Part 3. Study of the structure and morphology

The morphology and structure of high molecular weight linear polyethylene (M _w 450000) filled with carbon black and processed using molds that introduce an elongational flow component during injection molding has been examined using electron microscopy and x-ray diffraction techniques. The study of fracture surfaces reveals the display of shish-kebabs oriented along the injection direction with segregated longitudinal channels of carbon black particles. Molecular and lamellar changes in orientation are, furthermore, studied across the thickness of the moldings. It is shown that addition of carbon black particles to injection-molded polyethylene induces significant changes in lamellar orientation. Thus, while lamellar overgrowth proceeds perpendicular to the fiber axes within carbon free channels, lamellae grow randomly within carbon-enriched regions where flow is less pronounced.     

一种含有亚微米孔洞的新型微孔磷酸盐晶体材料的合成及其生长机理

采用水热法成功地合成了一种含有亚微米级孔洞的微孔磷酸盐晶体材料(记为HAP-TAP),其形貌特征是:六棱柱形的晶体表面分布着大量0.4～0.8μm的亚微米级孔洞,孔洞内长有片层状晶体.在样品晶化的过程中,通过控制合成时间,获得了纯六棱柱形晶体的大单晶(记为HAP).使用扫描电子显微镜(SEM)、粉末X射线衍射(XRD)、红外光谱和电子能谱(EDX)对HAP-TAP独特形貌的形成机理进行了研究和揭示.HAP的单晶XRD数据表明,HAP是一种具有二维空旷骨架结构的新型微孔磷酸铝晶体,其分子式为Al5(OH)2(PO4)7(C2N2H10)3.0.5H2O.EDX分析结果表明,生长于六棱柱形晶体孔洞内的片层状晶体为磷酸钛铝材料.     

硅钼杂多阴离子薄膜修饰电极线性扫描伏安法测定黑液中可溶性硅

本文报导了以玻碳电极为基体的１：１２硅钼杂多阴离子薄膜化学修铈电极的制备及其电化学特性。并应用于导数伏安法测定。在４．０×１０￣（－３）ｍ０ｌ／Ｌ（ＮＨ＿４）＿６ＭＯ＿７Ｏ＿（２４）－６．８×１０￣（－２）ｍｏｌ／ＬＮａ＿３Ｃｉｔ－０．４８ｍｏｌ／ＬＮＨＯ＿３体系中，硅浓度在８．３×１０￣（－７）～１．７×１０￣（－３）ｍｏｌ／Ｌ范围内与峰电流呈良好线性关系，检测限为８．０×１０￣（－７）ｍｏｌ／Ｌ。对可溶性硅（以ＳｉＯ＿２计）为２４５．０５ｍｇ／Ｌ的黑液，稀释１０倍后，取２．００ｍＬ平行测定９次，ＲＳＤ为０．５８％，加标回收率在９７．３％～１０４．４％间。     

Exact electronic properties in the classically forbidden region of a metal surface

We derive exact properties of the inhomogeneous electron gas in the asymptotic classically forbidden region at a metal–vacuum interface within the framework of local effective potential energy theory. We derive a new expression for the asymptotic structure of the Kohn–Sham density functional theory (KS‐DFT) exchange‐correlation potential energy v_xc(r) in terms of the irreducible electron self‐energy. We also derive the exact asymptotic structure of the orbitals, density, the Dirac density matrix, the kinetic energy density, and KS exchange energy density. We further obtain the exact expression for the Fermi hole and demonstrate its structure in this asymptotic limit. The exchange‐correlation potential energy is derived to be v_xc(z → ∞) = ?α_KS,xc/z, and its exchange and correlation components to be v_x(z → ∞) = ?α_KS,x/z and v_c(z → ∞) = ?α_KS,c/z, respectively. The analytical expressions for the coefficients α_KS,xc and α_KS,x show them to be dependent on the bulk‐metal Wigner–Seitz radius and the barrier height at the surface. The coefficient α_KS,c = 1/4 is determined in the plasmon‐pole approximation and is independent of these metal parameters. Thus, the asymptotic structure of v_xc(z) in the vacuum region is image‐potential‐like but not the commonly accepted one of ?1/4z. Furthermore, this structure depends on the properties of the metal. Additionally, an analysis of these results via quantal density functional theory (Q‐DFT) shows that both the Pauli W_x(z → ∞) and lowest‐order correlation‐kinetic W(z → ∞) components of the exchange potential energy v_x(z → ∞), and the Coulomb W_c(z → ∞) and higher‐order correlation‐kinetic components of the correlation potential energy v_c(z → ∞), all contribute terms of O(1/z) to the structure. Hence correlations attributable to the Pauli exclusion principle, Coulomb repulsion, and correlation‐kinetic effects all contribute to the asymptotic structure of the effective potential energy at a metal surface. The relevance of the results derived to the theory of image states and to KS‐DFT is also discussed. © 2005 Wiley Periodicals, Inc. Int J Quantum Chem, 2005