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71.
We compute the Dijkgraaf–Witten invariants of surfaces in terms of projective representations of groups. As an application we prove that the complex Dijkgraaf–Witten invariants of surfaces of positive genus are positive integers.  相似文献   
72.
3 (PPLN) crystal pumped by two single-frequency diode lasers. A maximum DFG power of 1.6 μW at 3.6 μm was generated with a pump power of 61.4 mW at 832 nm and a signal power of 41.5 mW at 1083 nm incident on a 19-mm-long PPLN crystal, which corresponds to a conversion efficiency of 335 μW W-2 cm-1. Received: 16 June 1998  相似文献   
73.
乙型肝炎病毒(Hepatitis B virus,HBV)感染是诱发原发性肝癌的主要原因之一.HBV存在4个相互重叠的开放读码框:S,C,P和X区.其中X基因表达的蛋白HBx被认为是诱导肝癌发生的一种多功能致癌蛋白,它可以作用于众多信号通路及细胞因子从而诱发肝癌.本文根据最新的研究,选择其中p53和NF-κB两条信号通路及HBx与表观遗传修饰的相关性进行了探讨,目的在于部分揭示HBV感染诱发肝癌的发病机理.  相似文献   
74.
The performance of a Li-ion cell strongly depends on the solid-electrolyte interface (SEI) on electrodes. The depth distribution of composition in SEI is normally determined by means of X-ray Photoelectron Spectroscopy (XPS) via Ar ion sputtering. Recently, a new kind of ion gun using C60 ions as sputtering source was introduced. In this report, a comparison between the effects of these two kinds of ion guns on the quantification of Li(Ni,Co,Mn)O2 electrodes was made. It was found that the C60 ion gun is more suitable for analyzing the composition and chemical state of Li(Ni,Co,Mn)O2 electrode since that it causes lower chemical damage in the superficial layer.  相似文献   
75.
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.  相似文献   
76.
Zinc blende (ZB) CdSe hollow nanospheres were solvothermally synthesized from the reaction of Cd(NO3)2·4H2O with a homogeneously secondary Se source, which was first prepared by dissolving Se powder in the mixture of ethanol and oleic acid at 205 °C. As Se power directly reacted with Cd(NO3)2·4H2O in the above mixed solvents, wurtzite (W) CdSe solid nanoparticles were produced. Time-dependent experiments suggested that the formation of CdSe hollow nanospheres was attributed to an inside-out Ostwald ripening process. The influences of reaction time, temperature and ethanol/oleic acid volume ratio on the morphology, phase and size of the hollow nanospheres were also studied. Infrared (IR) spectroscopy investigations revealed that oleic acid with long alkene chains behaved as a reducing agent to reduce Se powder to Se2− in the synthesis. Photoluminescence (PL) measurements showed that the ZB CdSe hollow nanospheres presented an obvious blue-shifted emission by 42 nm, and the W CdSe solid nanoparticles exhibited a band gap emission of bulk counterpart.  相似文献   
77.
We have used synchrotron X-ray diffraction to investigate the structural and chemical changes undergone by polycrystalline KH2PO4 (KDP) upon heating within the 30-250 °C temperature interval. Our data show evidence of a polymorphic transition at T∼190 °C from the room-temperature tetragonal KDP phase to a new intermediate-temperature monoclinic KDP modification (spacegroup P21/m and lattice parameters a=7.590, b=6.209, c=4.530 Å, and β=107.36°). The monoclinic RDP polymorph remains stable upon further heating to 235 °C, and is isomorphic to its RbH2PO4 and CsH2PO4 counterparts.  相似文献   
78.
We investigate the influence of the angle of incidence on the sputter yield when bombarding molecular solid, benzene, with C60. Our simulations show that at normal incidence, essentially all of the projectile energy is deposited into the substrate within ∼2.5 nm of the surface. However, at 75° incident angle, only 35% of the projectile energy is deposited within a depth of less than 1.5 nm of the surface while 65% of the projectile energy is reflected. Therefore, important aspects of the collision process which are dependent upon energy deposition, such as sputter yield, ejection depth, and molecule dissociation, may change as the incident angle changes.  相似文献   
79.
The distribution of both carbon and silicon isotopes in synthetic sublimation growth SiC wafers and in natural SiC grains was studied using secondary ion mass-spectrometry (SIMS). Significant variations in both isotopic ratios were observed which were broadly correlated with the crystalline perfection as documented by Raman microspectroscopy. Domains consisting of 15R (or with its admixture) are, on average, enriched in 12C isotope relative to 6H domains, and they also show larger scatter in their observed silicon isotope ratios. We ascribe such heterogeneity to fluctuations of Si/C ratio in the growth medium and it is possible to model the spatial extent of such fluctuations. For the natural SiC grains the isotopic data suggest that they grew under relatively stable conditions, although some of them show significant isotopic zoning.  相似文献   
80.
Low temperature synthesis of ITO nanoparticles using polyol process   总被引:2,自引:0,他引:2  
A low temperature synthesis technique to prepare indium tin oxide (ITO) nanoparticles by the polyol process is proposed. On examining the phase formation of ITO nanoparticles in polyols and alcohols such as ethylene glycol, trimethylene glycol, and 1-heptanol, it was found that ITO nanoparticles could be synthesized directly without any post--annealing treatments at 175 °C in 1-heptanol. The morphology of the particles is influenced by the type of polyol. The composition of Sn in the ITO system could be easily controlled by simply varying the In/Sn precursor ratio in 1-heptanol. The low temperature synthesis method has enabled the formation of highly crystalline ITO nanoparticles with diameters less than 25 nm even at annealing temperatures as high as 700 °C.  相似文献   
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