Homo- and heteronuclear 2D NMR approaches to analyse a mixture of deuterated unlike/like stereoisomers using weakly ordering chiral liquid crystals

We describe several homo- and heteronuclear 2D NMR strategies dedicated to the analysis of anisotropic (2)H spectra of a mixture of dideuterated unlike/like stereoisomers with two remote stereogenic centers, using weakly orienting chiral liquid crystals. To this end, we propose various 2D correlation experiments, denoted "D(H)(n)D" or "D(H)(n)C" (with n=1, 2), that involve two heteronuclear polarization transfers of INEPT-type with one or two proton relays. The analytical expressions of correlation signals for four pulse sequences reported here were calculated using the product-operators formalism for spin I=1 and S=1/2. The features and advantages of each scheme are presented and discussed. The efficiency of these 2D sequences is illustrated using various deuterated model molecules, dissolved in organic solutions of polypeptides made of poly-gamma-benzyl-L-glutamate (PBLG) or poly-epsilon-carbobenzyloxy-L-lysine (PCBLL) and NMR numerical simulations.     

The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVA

Ti-doped hydrogenated diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates by a filtered cathodic vacuum arc (FCVA) method using Ar and CH₄ as the feedstock. The composition and microstructure of the films were investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and IR spectroscopy. The internal stress was determined by the radius of curvature technique. The influence of the bias voltage on the microstructure of the as-deposited films was investigated. It was found that the graphite-like bonds was dominated in the Ti-doped DLC film deposited at 0 V bias voltage. When bias voltage was increased to −150 V, more diamond-like bond were produced and the sp³ content in film reached the maximum value, after which it decreased and more graphite-like bonds feature produced with further increase of the negative bias voltage. The compressive internal in the Ti-doped DLC films also exhibited a maximum value at −150 V bias voltage. IR results indicated that CH bonded intensity reduced, and H atoms bonded with C atoms were substituted for the Ti atoms as the negative bias voltage increasing. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of negative bias voltage applied to the substrate.     

Collapsing and monopole classes of 3-manifolds

By applying the L²$L^2$-estimate of the scalar curvature of a Riemannian 3-manifold with a Seiberg–Witten monopole class to a collapsing sequence of metrics, we obtain conditions to be a monopole class on certain 3-manifolds. This also gives a relation between a maximizing sequence of the Yamabe constants and the collapsing on a 3-manifold with a non-torsion monopole class.     

Gravitational interpretation of the Hitchin equations

By referring to theorems of Donaldson and Hitchin, we exhibit a rigorous AdS/CFT-type correspondence between classical 2+1-dimensional vacuum general relativity theory on Σ×R$\Sigma \times \mathbb{R}$ and SO(3) Hitchin theory (regarded as a classical conformal field theory) on the spacelike past boundary Σ$\Sigma$, a compact, oriented Riemann surface of genus greater than 1. Within this framework we can interpret the 2+1-dimensional vacuum Einstein equation as a decoupled “dual” version of the two-dimensional SO(3) Hitchin equations.     

黄芩的1H NMR指纹图谱研究

利用PFT-NMR 核磁共振波谱仪测定了黄芩提取物的¹H NMR图谱,对黄芩提取物的¹H NMR指纹图谱进行了解析,并与黄芩苷元、千层纸素A、汉黄芩素和黄芩苷进行了比较,获得了黄芩提取物的特征峰,并利用向量夹角法计算了不同指纹图谱的相似度;结果表明不同黄芩提取物的¹H NMR指纹图谱都显示出黄酮类有效成分特征共振峰,并具有很好的重现性和高度的特征性,可以成为黄芩真伪鉴别的依据;不同黄芩的¹H NMR指纹图谱的相似度计算结果定量地评价了不同指纹图谱的相似性.     

A Molecular Analogue of the C−H Activation Intermediate of the Silica-Supported Ga(III) Single-Site Propane Dehydrogenation Catalyst: Structure and XANES Signature

Propane dehydrogenation is an important field of research due to an increasing world-wide demand of propene while classical production routes through naphtha cracking are in decline. In that context, silica-supported Ga(III) sites, synthesized from surface organometallic chemistry principles, show high selectivity and stability in the propane dehydrogenation reaction. This performance is in significant contrast to the reported fast deactivation and lower selectivity of most Ga₂O₃ and CrO₃ based materials. The Ga-catalyzed propane dehydrogenation reaction is proposed to proceed through the formation of Ga alkyl intermediates for which it would be desirable to have detailed structural and spectroscopic information. Here, we prepare a consistent series of Ga(III) molecular complexes with varying numbers of alkyl and siloxide ligands; they are characterized by single crystal X-Ray diffraction and X-Ray Absorption Near Edge Structure analysis, which is known to be highly sensitive to the Ga coordination environment. We report in particular the structure and the spectroscopic signatures of [Ga(ⁱPr)(OSi(O^tBu)₃)₂(HOSi(O^tBu)₃)], a molecular mimic of the key proposed reaction intermediates in the Ga-catalyzed PDH reaction.     

N-Tosylhydrazone as an oxidizing directing group for the redox-neutral access to isoquinolines via Cp1Co(III)-Catalyzed C–H/N–N activation

Herein, an efficient and economic access has been revealed for the synthesis of isoquinolines via C–H bond activation strategy by using comparatively inexpensive and versatile cobalt catalyst. A hardly investigated directing group, N-tosylhydrazone has been effectively applied as an internal oxidant for an annulation reaction with internal alkynes via C–H/N–N bond functionalization. This catalytic protocol works for the extensive variety of substrates in moderate to excellent yields under external oxidant-free conditions. Additionally, the proposed protocol has advantages such as broad substrate coverage with significant product yields, readily synthesized substrates as well as scalability up to the gram quantity which further improves the competency of the methodology.     

超薄骨架有序介孔CdS/NiS的制备及光催化产氢性能

采用有序介孔氧化硅为硬模板, 通过纳米浇筑法制备了由螺旋骨架构建的有序介孔硫化镉(CdS)光 催化材料. 该光催化材料具有约5 nm厚的超薄骨架和大的比表面积(238 m²/g), 能有效缩短光催化反应中 光生电荷迁移到表面进行反应的距离并同时提供更多的反应活性位点, 从而增强光催化性能. 通过原位化学沉积法将不同量的助催化剂硫化镍(NiS)沉积到有序介孔CdS表面, 得到了一系列超薄骨架有序介孔CdS/NiS复合光催化材料. 可见光照射下的光催化产氢活性测试结果表明, 负载适量NiS的有序介孔CdS具有显著增强的光催化产氢活性(3.84 mmol?h^-1?g^-1), 约为负载相同量NiS的普通商业化CdS材料(0.22 mmol?h^-1?g^-1)的17.5倍.     

限域NiCo合金纳米颗粒高效催化生物质衍生物水相加氢脱氧

将储量丰富的生物质及其衍生物转化为具有高附加值的燃料和化学品被认为是一种有前景的绿色途径,可以极大地减少人们对传统化石资源的依赖.作为木质纤维素热解的直接产物和生物油升级的模型化合物,香草醛可以通过加氢脱氧(HDO)过程选择性地转化为2-甲氧基-4-甲基苯酚(MMP).MMP是一种有价值的化学品,常用于香料和药物等重要中间体的合成.在过去十年里,大量的金属催化剂被用来催化香草醛HDO转化为MMP.其中,贵金属(Pt,Pd,Ru和Au)虽然活性高,但是其储量低、价格昂贵,不利于工业化应用;而非贵金属(Fe,Co,Ni和Cu)的催化活性普遍较低,需要苛刻的反应条件来提高转化效率和选择性.此外,这类HDO反应大都在有机溶剂中进行,容易造成环境污染.因此,开发高效、稳定的非贵金属催化剂用于水相HDO反应是一个巨大的挑战.一般来说,合金纳米颗粒(NPs)具有强烈的协同效应,能产生良好的配位结构和电子环境,从而显著提升催化活性和选择性.基于此,本文首次采用了一种简单可控的合成方法来制备三聚氰胺海绵负载的氮掺杂碳纳米管(N-CNTs)限域的Ni-Co合金NPs(NiCo@N-CNTs/CMF)催化剂.该催化剂具有优异的HDO性能,在2 MPa H2,120oC反应6 h条件下,能在水相中将生物质衍生的香草醛高效转化为MMP,转化率和选择性均达到100％.相比于单金属的Ni@N-CNTs/CMF和Co@N-CNTs/CMF催化剂,香草醛转化率和MMP选择性都有大幅度的提高.而且,在温和的反应条件下,该催化剂对香草醛衍生物和其他芳香醛类化合物同样表现出优异的HDO性能,拥有100％的转化率以及较高的MMP选择性(91.5％～100％).XPS结果表明,Ni-Co形成合金后发生了电子结构的偏移,即Co原子可以从邻近的Ni原子处得到电子,提高Co电子云密度,从而促进对香草醛中C=O键的吸附.DFT计算结果表明,相比于单金属的Ni和Co,Ni-Co合金化后能显著提高对C=O键的选择性吸附和活化.同时,H2解离后形成的活性H*物种在Ni-Co合金NPs表面更容易脱附并参与催化反应.因此,Ni-Co@N-CNTs/CMF催化剂优异的HDO性能主要是由于Ni-Co合金NPs的协同作用大大促进了其对C=O键的选择性吸附和活化,以及活化氢物种的脱附.本文为设计和制备高效的非贵金属催化剂应用于水相的HDO反应提供了一个新策略.     

NiS助催化剂的硫调控光沉积合成及其增强g-C3N4的光催化产氢性能

作为一种非金属聚合半导体,石墨相氮化碳(g-C3N4)具有特殊的能带结构、可见光响应能力以及优良的物理化学性质以及生产成本低等特点,因而已成为目前光催化领域的研究热点.然而,由于g-C3N4被光激发的电子与空穴极易复合,导致g-C3N4材料的光催化性能并不理想.而助剂修饰是实现光生载流子有效分离以提高光催化活性的有效途径.众所周知,贵金属Pt可以作为光催化产氢的反应位点,但高昂的成本限制了它的实际应用.所以,开发高效的非贵金属助剂很有必要.近年来,NiS作为优良的电子助剂在光催化领域受到广泛关注.大量研究表明,NiS可以作为g-C3N4的产氢活性位点用于提高其光催化产氢性能.NiS助剂主要是通过水热、煅烧和液相沉淀的方法修饰在g-C3N4的表面上.相较而言,助剂的光沉积方法具有一些独特的优势,例如节能、环保、简易并且能够实现其原位牢固地沉积在光催化剂的表面.然而g-C3N4光生电子和空穴强还原和氧化能力容易导致像Ni^2+的还原和S^2-的氧化等副反应发生,因此NiS助剂很难光沉积在g-C3N4材料表面.本文采用硫调控的光沉积法成功合成了NiS/g-C3N4光催化材料,该法利用g-C3N4在光照条件下产生的光生电子结合S以及Ni^2+生成NiS,然后原位沉积在g-C3N4表面.由于E0(S/NiS)(0.096 V)比E0(Ni^2+/Ni)(-0.23 V)更正,所以NiS优先原位沉积在g-C3N4表面.因此,硫调控的光沉积法促进了NiS的生成,并抑制了金属Ni等副反应的形成.通过X射线光电子能谱分析NiS/g-C3N4的表面化学态,表明该方法能成功地将NiS修饰在g-C3N4的表面,这也得到透射电镜和高分辨透射电镜结果的证实.光催化产氢的结果表明,NiS/g-C3N4光催化剂实现了良好的光催化性能,其最优产氢速率(244μmol h^?1 g^?1)接近于1 wt%Pt/g-C3N4(316μmol h^?1 g^?1).这是因为硫调控的光沉积法实现NiS助剂在g-C3N4表面的修饰,从而促进光生电子与空穴的有效分离,进而提高光催化制氢效率.此外,在该方法中,NiS的形成通常在g-C3N4光生电子的表面传输位点上,因此也能够使NiS提供更多的活性位点以提高界面产氢催化反应速率.电化学表征结果也进一步证明NiS/g-C3N4光催化剂加快了电子与空穴的分离和转移.更重要的是,这种简易且通用的方法还可以实现CoSx,CuSx,AgSx对g-C3N4的助剂修饰,并且都提高了g-C3N4的光催化产氢性能,表明该方法具有一定的普适性,为高效光催化材料的合成提供了新的思路.