Optimal impulse control problems for degenerate diffusions with jumps

Optimal stopping and impulse control problems for degenerate diffusion with jumps are studied in this paper. Lipschitzian coefficients for the diffusion process, data with polynomial growth, and evolution in the whole space are the main assumptions on the models. Several characterizations of the optimal cost functions are given. Existence of optimal policies is obtained.This research has been supported in part by Army Research Office Contract DAAG29-83-K-0014 and by National Science Foundation Grant DMS-8601998.     

On the existence of MOLS with equal-sized holes

We consider a pair of MOLS (mutually orthogonal Latin squares) having holes, corresponding to missing sub-MOLS, which are disjoint and spanning It is shown that a pair of MOLS withn holes of sizeh exist forh 2 if and only ifn 4 For SOLS (self-orthogonal Latin squares) with holes, we have the same result, with two possible exceptions SOLS with 7 or 13 holes of size 6     

On switching paths polyhedra

A class of integer polyhedra with totally dual integral (tdi) systems is proposed, which generalizes and unifies the “Switching Paths Polyhedra” of Hoffman (introduced in his generalization of Max Flow-Min Cut) and such polyhedra as the convex hull of (the incidence vectors of) all “path-closed sets” of an acyclic digraph, or the convex hull of all sets partitionable intok path-closed sets. As an application, new min-max theorems concerning the mentioned sets are given. A general lemma on when a tdi system of inequalities is box tdi is also given and used.     

Roots,iterations and logarithms of formal automorphisms

In this paper it is proved that having a logarithm is equivalent to having roots of arbitrary order in the group of automorphisms of a formal power series ring, and in algebraic subgroups too     

Dependence of thermal conductivity on electrical resistivity in Bismuth-Tellurides

The p-type (Bi_0.25Sb_0.75)₂Te₃ doped with 3-12 wt% excess Te alone and n-type Bi₂(Te_0.94Se_0.06)₃ codoped with 0.017-0.026 wt% Te and 0.068-0.102 wt% I were prepared by the Bridgman method, to produce intentionally polycrystalline. Some of the as-grown specimens were annealed, in order to prepare specimens with much different ρ. These polycrystalline specimens have almost the same degree of alignment of the c plane parallel to the freezing direction. The electrical rersistivity ρ and thermal conductivity κ were measured at 298 K along the freezing direction and κ was plotted as a function of ρ. As a result, the lattice components κ_ph obtained by subtracting the electronic component κ_el from the observed κ were found to decrease almost linearly with a decrease of ρ in both p- and n-type specimens, where κ_el was calculated using Wiedemann-Franz law. This tendency is consistent with the conventional result that κ_ph becomes negligible small in metals. The significant decrease in κ_ph with decrease in ρ is considered to be caused predominantly by the phonon scattering due to dopants. The relationship between κ_ph and ρ was first clarified in the intermediate region between the metal and insulator.     

Epitaxial Cu(In,Ga)S2 thin film solar cells

Epitaxial layers of the quaternary compound Cu(In,Ga)S₂ and the ternary compound CuInS₂ were grown on Si(111) substrates via Molecular Beam Epitaxy. The layers were investigated for their morphological and structural properties using Rutherford backscattering spectroscopy, atomic force microscopy, reflection high-energy electron diffraction and X-Ray diffraction. Furthermore, complete solar cell devices were processed from these layers and their photovoltaic properties were investigated by means of I(U)-curves under illumination. Thus, efficiencies up to η=3.2% were achieved. The comparatively low performance of the solar cell devices is attributed to certain heterogeneities of the samples as a result of the growth process.     

Noncommutative differential geometry with higher-order derivatives

We build a toy model of differential geometry on the real line, which includes derivatives of the second order. Such construction is possible only within the framework of noncommutative geometry. We introduce the metric and briefly discuss two simple physical models of scalar field theory and gauge theory in this geometry.Partially supported by KBN grant 2 P302 168 4.     

紫外分光光度法测定维生素B_6

本文建立了以 0 .0 35 mol/ L HAc(醋酸 )为介质 ,采用紫外分光光度法测定维生素 B6的新方法。该方法体系简单 ,操作方便、快速、灵敏 ,其表观摩尔吸光系数ε为 9.37× 10 4 L· mol-1· cm-1。线性范围为0 .61— 4 0 .10μg/ m L。用于 VB6片剂和针剂测定 ,回收率为 10 0 .82 %— 10 1.90 %     

Effect of AgNO3 additive/doping on microstructure and superconductivity of the Pb doped Hg: 1223 thin film prepared through spray pyrolysis

We report successful fabrication of Ag doped Hg:1223 films by reacting Ba₂Ca_2.3Cu_3.3O_z(Ag_y): y=0, 0.02, 0.025, 0.05, 0.1 and 0.2 precursors deposited by spray pyrolysis on SrTiO₃ (100) substrates, in controlled Hg+Pb ambient, in an evacuated sealed quartz tube at 820 °C for 4 h. The effects of AgNO₃ addition on the superconducting properties of Hg/(Pb):1223 films are studied. The addition of low concentration of silver e.g. y≈0.025 results in a slight increase in T_c (R=0) from 125 to 126 K and the dc critical current density (J_c) decreases with the increasing Ag in Hg(Pb):1223 (Ag_y) films. The microstructural details exhibit the curious characteristics of spiral like features for lower concentrations of silver i.e. up to y=0.05. These improvements are believed to be due to the liberation of oxygen through the dissociation of AgNO₃ at higher temperature and passivation of weak link effects through the segregation of silver at these grain boundaries. The addition of silver content y≥0.05 resulted in the decrease in transition temperature. The J_c is observed to decrease steadily with increasing Ag content. The microstructural features, e.g. spiral are also found to deteriorate with increasing silver content. The deterioration in superconducting properties at high Ag content is believed to be mainly due to the formation of Ag-Hg amalgam.     

A *-product on SL(2) and the corresponding nonstandard (\mathfrak{s}\mathfrak{l}({\text{2}}))

We obtain Zakrzewski's deformation of Fun SL(2) through the construction of a *-product on SL(2). We then give the deformation of dual to this, as well as a Poincaré basis for both algebras.Aspirant au Fonds National belge de la Recherche Scientifique. Partially supported by EEC contract SC1-0105-C.