Spin-peierls transition in dimerized stacks of anion-radical salt (N-Me-2,5-di-Me-Pz)(TCNQ)2, (Pz is pyrazine)

An anion-radical salt (ARS) (N-Me-2,5-di-Me-Pz)(TCNQ)₂, where Pz is pyrazine, was synthesized and its crystal structure was resolved. X-ray diffraction experiments on single crystals were performed. Heat capacity was measured in the temperature range from 2 to 300 K. Magnetisation and magnetic susceptibility were measured in the temperature range from 2 to 300 K and the low-temperature part was measured in magnetic fields from 5 mT to 5 T. The experimental results were explained in terms of dimerized Heisenberg spin chain model. Numerical calculations were performed and compared with experimental data.     

Result of search for low velocity exotic particles

The L3＋C experiment, taking advantage of the L3 muon magnetic spectrometer, measured the spatial tracks of charged cosmic ray particles to obtain rigidity as well as velocity. One possible low velocity exotic particle is observed. The existing uncertainties are discussed, and the flux upper limit of the low velocity exotic particles from this observation is deduced based on the assumption of a null observation. The result is 6.2×10^-10 cm^-2·s^-1·sr^-1 at 90% confidence level in the velocity range from 0.04c to 0.5c.     

90°弯管内冰浆流动特性数值模拟

基于欧拉法建立了冰浆流动的混合模型,对冰浆在90°弯管内的流动特性进行了数值模拟研究,获得了弯管内冰浆的流场和冰晶颗粒的运动轨迹,探讨了弯管管径、曲率半径及冰浆的流速、浓度参数对弯管内冰浆压降的影响,并对弯管压降的模拟结果与实验结果进行对比,两者吻合较好。结果表明:在计算参数范围内,弯管压降随冰浆流速、浓度及弯管曲率半径的增大而增大,随弯管管径的增大而减小;冰浆在弯管内流动形成二次流现象,两个漩涡区域出现在弯管截面两侧;漩涡导致部分冰晶颗粒的运动轨迹发生改变,并使其向弯管下方的负压区聚集,增大了冰晶颗粒的碰撞几率。     

Phase diagram for stripes in YBa2Cu3O6+x superconductors

Neutron scattering has been used to measure the charge and spin structure in the YBa₂Cu₃O_6+x superconductors. Incommensurate static charge ordering is found at low doping levels while only charge fluctuations are found at higher doping. The spin structure is complex with both a commensurate resonance and incommensurate structure observed at low temperatures. The scattering results are used to construct a phase diagram for stripes in the YBa₂Cu₃O_6+x system.     

用荧光探针签别CYP2C9*3基因

用一种基激复合物荧光探针系统来签别碱基错配的CYP2C9*3基因,该系统选择两个分开的与靶点碱基相对应的12碱基荧光标记的寡核苷酸作为探针,分别对24碱基、47碱基、质粒(3165bp)的靶点CYP2C9基因和CYP2C9*3基因进行杂交配对,结果该基激复合物荧光探针系统能有效签别各种长度的CYP2C9基因和CYP2C9*3基因,背景干扰很低,灵敏度高,可尝试用于其他基因型的遗传多态性的签别。     

白光LED用红色发射荧光粉YVO_4:Ce~(3+)(Gd~(3+))的制备与表征

用高温固相反应法制备了稀土离子Ce3+、Gd3+双掺杂的YVO4发光材料,通过X射线衍射(XRD)、扫描电镜(SEM)、激发以及发射光谱等测试手段对YVO4:Ce3+(Gd3+)荧光粉的制备条件、发光性能以及表面形貌进行了研究。XRD结果表明,在1100℃恒温5 h可得到Ce3+(Gd3+):YVO4纯相。SEM结果显示颗粒基本为球形,粒径约为300~500 nm。激发光谱测试表明,Ce3+(Gd3+):YVO4荧光粉在近紫外光区(232 nm)和蓝光区(424 nm)可以被有效地激发,用424 nm的蓝光激发样品时,Ce3+(Gd3+):YVO4荧光粉在611 nm和659 nm处的发光强度最大;因此,这种荧光粉可以作为组合型白光LED的红色发射荧光粉的候选材料。     

Enhanced gas-sensing behaviour of Ru-doped SnO2 surface: A periodic density functional approach

A theoretical study on Ru-doped rutile SnO₂(1 1 0) surface has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA-RPBE) level with a periodic supercell approach. Electronic structure analysis was performed based on the band structure and partial density of states. The results provide evidence that the electronic structures of SnO₂(1 1 0) surface are modified by the surface Ru dopant, in which Ru 4d orbital are located at the edge of the band gap region. It is demonstrated that molecular oxygen adsorption characteristics on stoichiometric SnO₂(1 1 0) surface are changed from endothermic to exothermic due to the existence of surface Ru dopant. The dissociative adsorption of molecular oxygen on the Ru_5c/SnO₂(1 1 0) surface is exothermic, which indicates that Ru could act as an active site to increase the oxygen atom species on SnO₂(1 1 0) surface. Our present study reveals that the Ru dopant on surface is playing both electronic and chemical role in promoting the SnO₂ gas-sensing property.     

Structural modifications of diamond like carbon films induced by MeV nitrogen ion irradiation

Diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates using plasma deposition technique. The deposited films were irradiated using 2 MeV N⁺ ions at fluences of 1×10¹⁴, 1×10¹⁵ and 5×10¹⁵ ions/cm². Samples have been characterized by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). Analysis of Raman spectra shows a gradual shift of both D and G band peaks towards higher frequencies along with an increase of the intensity ratio, I(D)/I(G), with increasing ion fluence in irradiation. These results are consistent with an increase of sp² bonding. XPS results also show a monotonic increase of sp²/sp³ hybridization ratio with increasing ion fluence. Plan view TEM images show the formation of clusters in the irradiated DLC films. HRTEM micrographs from the samples irradiated at a fluence of 5×10¹⁵ ions/cm² show the lattice image with an average interplanar spacing of 0.34 nm, revealing that the clusters are graphite clusters. The crystallographic planes in these clusters are somewhat distorted compared to the perfect graphite structure.     

Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surface

The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five () periodic bands have been observed in thicker films. Taking the () periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1×1) structure. Of the () periodic bands observed in thick films, four of them are well explained by the folding of the (1×1) bands into a () periodicity. Regarding the other band, the three () periodic bands would originate from the electronic states related to the inner Si layers that form a () structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.     

Corrosion behavior of Nd9.4Pr0.6Febal.Co6B6Ga0.5TixCx (x=0, 1.5, 3, 6) nanocomposites annealed melt-spun ribbons

The effect of Ti and C additions on the corrosion behavior of Nd_9.4Pr_0.6Fe_bal.Co₆B₆Ga_0.5Ti_xC_x (x=0, 1.5, 3, 6) isotropic nanocomposite melt-spun ribbons in 3.5 wt% sodium chloride solution was studied. The melt-spun ribbons were annealed at 750 °C for 10 min in argon-filled quartz capsules. The microstructure of multiphase nanocrystalline samples and corrosion products was characterized using the X-ray diffraction and electron microscopy techniques. The electrochemical behavior was assessed using potentiodynamic polarization and electrochemical impedance spectroscopy. The results show that the addition of Ti and C increases the corrosion resistance of NdFeB ribbons; the best corrosion resistance was obtained for 1.5 wt% Ti and C content.