异步拖动消阻尼谐振子

提出异步拖动消阻尼谐振子的实验模型及其两和中实胜的变形结构，用它构造的振动合成实验装置，可在不涉及电磁学、光学概念的力学范畴内完成各类振动合成的实验教学。     

超磁致伸缩材料国际会议情况介绍

日本高科技协会，于1996年11月6日-8日在美国夏威夷火努鲁鲁的日本东海大学太平洋中心组织召开了稀土超磁致伸缩材料基础和应用研究的国际会议．超磁致伸缩材料GMM（GiantManetostrictiveMa．tenals）为稀土元素钛Tb（Terbium）、镐Dy（DysPro－sium）和铁Fe的合金化合物，其基     

长余辉材料Sr_2MgSi_2O_7∶Eu~(2+),Dy~(3+)中稀土离子的发光特性

利用同步辐射光源(德国HASYLAB实验室的SUPERLUMI实验站)和真空紫外激光(157.6nm)对新型蓝光发射长余辉材料Sr2MgSi2O7∶Eu2 (0·2%),Dy3 (8%)进行了光谱研究。在170nm同步辐射光源激发下,观察到对应Eu2 :5d-4f跃迁的477nm发射带和对应Dy3 :4f-4f跃迁的两组线谱发射,其中只有来自Eu2 的5d-4f发射对长余辉光谱有贡献。在157.6nm激光激发下,除了上述发射外,还明显观察到对应Eu3 的红色线谱(590,614,626nm)。结合这些光谱特性,对Sr2MgSi2O7∶Eu2 ,Dy3 中稀土离子的发光特性以及长余辉发光机理进行了讨论,并提出了Eu2 充当空穴陷阱的可能性。     

光功能纳米陶瓷材料研究取得重要成果

~~光功能纳米陶瓷材料研究取得重要成果@汪道友~~     

激光致晶态Ag11In12Te26Sb51相变介质光学常量的研究

研究了结晶度对Ag11In12Te26Sb51相变薄膜光学常数的影响。用初始化仪使相变薄膜晶化，改变晶化参量得到不同的结晶度，当转速固定时，随激光功率的增加，折射率基本随之减小，消光系数先是增大，而后减小；当激光功率固定时，随转速的增大，折射率也随之增大，消光系数也是先增大后减小。非晶态与晶态间的变换、薄膜微结构的变化（包括晶型的转变和原子间键合状态的变化）以及薄膜内残余应力的影响Ag11In12Te26Sb51相变薄膜复数折射率的主要原因。测量了单层膜的透过率和CD－RW相变光盘中Ag11In12Te26Sb51薄膜非晶态和晶态的反射率。     

类氢及碱金属原子激发态寿命的半经典计算公式

根据对应原理,得到了类氢原子能态平均寿命半经典的计算公式τ(n,l),然后利用相对论单通道量子数亏损理论进行推广,得到用来计算考虑总角动量J的激发态寿命公式τ(n,l,l+1/2)和τ(n,l,l-1/2),利用单通道量子数亏损理论得到了碱金属原子n、l远大于1时激发态寿命的半经典公式τ(n.l)=τ0(m+M/nm/v/+M)2v7l(l+1/2)/n4,其计算结果和实验数据符合的很好.     

用超磁致伸缩调谐光纤光栅的光分/插复用器

提出并研究了一种新型多信道切换的全光分/插复用器,它主要由光纤Bragg光栅(FBG)和一对光环行器组成.采用了一种高效的超磁致伸缩材料(GMM)使FBG产生有效的Bragg波长偏移.用控制电流来调控FBG的应变和Bragg波长偏移.用4只相同的FBG与波长叠加技术相结合,可建立能提供15种不同下路信道方式的OADM.     

Solutions for a Mode Ⅲ Growing Crack in a Piezoelectric Plane Under Two Kinds of Electric Boundary Conditions ＊

The solutions for a mode Ⅲ crack growing along an arbitrary propagation path in a piezoelectric plane are studied under the impermeable surface condition and the electrical contact surface condition respectively. According to the two kinds of electric boundary conditions, the Hilbert and Riemann boundary value problems in a half-plane including opening smooth arc are obtained from the theoretical analysis. Moreover, the equipollence of the solution formed under these two electric boundaries is proved, and unified solutions for the stress and electric displacement distribution in the crack-tipfield of the piezoelectric plane are achieved.     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.     

Stopband Phenomena in the Passband of Left-Handed Metamaterials

Stopband phenomena are reported in the passband of left-handed metamaterials. The samples with linear defect are designed by removing one layer of split ring resonators （SRRs）. It is shown that the left-handed transmission peaks have a distinct transform with the relative deviation of the SRRs centre from the wire centre 8, from a single left-handed peak, double left-handed peaks with different magnitude to no transmission peak, i.e. left-handed properties of metamaterials disappear. Numerical simulation shows that the change of 8 makes the effective permeability shift at a frequency range, where stopband occurs. It is thought that the stopband in left-handed passband is due to the symmetry breaking between SRRs and wires in the metamaterials.