基于高维两粒子纠缠态的超密编码方案

基于通信双方预先共享d维二粒子最大纠缠态非定域相关性,信息发送方Bob只需要向信息接收者Alice传送一个粒子,就可以传送log22比特经典信息,为保护信息的安全,方案采用诱骗光子技术,安全性等价于改进后的原始量子密钥分配方案(Bennett-Brassard 1984,BB84).本文讨论了基于高维纯纠缠态超密编码方...     

气源MBE外延自组装GeSi量子点的光致荧光

利用气源分子束外延技术(MBE)制作了GeSi自组装量子点样品.利用原子力显微镜(AFM)和光致荧光(PL)光谱研究了该量子点的形貌和光学性质.气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度.200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17 meV.升温至200 K,载流子的输运过程发生...     

能量约束自适应迭代算法与光学像差复原

提出了一种新的适用于移变降质图像复原的算法——能量约束自适应迭代复原.算法采用能量约束复原的空域迭代形式,使其能够用于处理光学像差引起的移变降质复原问题;以局部能量约束取代总体能量约束,使算法具有空间自适应特性;并采用双通道处理方法,消除能量约束带来的图像亮度衰减,同时抑制图像边界截断引起的振荡波纹.场曲复原仿真实验结...     

基于六粒子纠缠态和Bell态测量的量子信息分离

通过介绍六粒子纠缠态的新应用研究,提出了一个二粒子任意态的信息分离方案.在这个方案中,发送者Alice、控制者Charlie和接受者Bob共享一个六粒子纠缠态,发送者先执行两次Bell基测量;然后控制者执行一次Bell基测量;最后接受者根据发送者和控制者的测量结果,对自己拥有的粒子做适当的幺正变换,从而能够重建要发送的...     

两端叠层结构的中长波量子阱红外探测器

采用分子束外延技术生长了两个叠层结构的双色量子阱红外探测器结构,并经过光刻和湿法刻蚀制作成两端结构的量子阱红外探测器单元器件. 通过改变量子阱势垒高度,势阱宽度,掺杂浓度,重复周期数等器件参数,可以使总电压在两个叠层之间产生适当的分布,从而使器件表现出不同的电压响应特点. 光电流谱测量显示,器件1随着外加偏置电压可实现对于中波大气红外窗口(3—5 μm)和长波大气红外窗口(8—12 μm)红外响应的切换,器件2在不同的偏置电压下可以对这两个波段同时做出响应. 本文探讨了两端叠层结构量子阱红外探测器的工作原 关键词： 电压调制 同时响应 量子阱红外探测器 双波段     

原子非序列双电离的多次返回碰撞电离机理分析

本文采用三维半经典再散射模型研究了He原子在高光强(1.5×10¹⁵ W/cm²)、少周波激光脉冲作用下的非序列双电离问题,重点分析了沿激光电场极化方向的动量关联谱.发现两个电子沿相反方向发射的比例明显比中等光强区(7×10¹⁴ W/cm²)和低光强区(2.5×10¹⁴ W/cm²),以及同等光强的长脉冲情形都偏高, 同时V形结构也更加明显.通过轨道"回溯"分析, 进一步深入 关键词： 强场 非序列双电离 再散射     

量子点环嵌入Aharonov-Bohm干涉器中电子的退耦合态及反共振现象

采用Anderson模型哈密顿量和非平衡态格林函数方法对量子点环以不同构型嵌入A-B干涉器中电子输运的退耦合态及反共振现象进行了理论研究. 结果表明,量子点环A-B干涉器的结构对称性以及穿过A-B干涉器的磁通量是诱发退耦合现象的两种物理机理. 耦合量子点结构的对称性越高,体系在相干电子输运过程中表现出来的退耦合及反共振现象越明显. 而且在具有高度对称性的耦合量子点结构中,通过磁场调节体系的结构参数可以分别使第奇数或第偶数分子本征态从电极上退耦合,从而使电子输运电导表现出奇偶对等振荡现象. 这为设计纳米电子开关器件提供了一个新的物理模型. 关键词： 量子点环 A-B干涉器 退耦合 反共振     

Using a quantum dot system to realize perfect state transfer

There are some disadvantages to Nikolopoulos et al.'s protocol [Nikolopoulos G M, Petrosyan D and Lambropoulos P 2004 Europhys. Lett. 65 297] where a quantum dot system is used to realize quantum communication. To overcome these disadvantages, we propose a protocol that uses a quantum dot array to construct a four-qubit spin chain to realize perfect quantum state transfer (PQST). First, we calculate the interaction relation for PQST in the spin chain. Second, we review the interaction between the quantum dots in the Heitler-London approach. Third, we present a detailed program for designing the proper parameters of a quantum dot array to realize PQST.     

High entanglement generation and high fidelity quantum state transfer in a non-Markovian environment

This paper analyses a system of two independent qubits off-resonantly coupled to a common non-Markovian reservoir at zero temperature. Compared with the results in Markovian reservoirs, we find that much higher values of entanglement can be obtained for an initially factorized state of the two-qubit system. The maximal value of the entanglement increases as the detuning grows. Moreover, the entanglement induced by non-Markovian environments is more robust against the asymmetrical couplings between the two qubits and the reservoir. Based on this system, we also show that quantum state transfer can be implemented for arbitrary input states with high fidelity in the non-Markovian regime rather than the Markovian case in which only some particular input states can be successfully transferred.     

Multipeak-structured photoluminescence mechanisms of as-prepared and oxidized Si nanoporous pillar arrays

Silicon dominates the electronic industry, but its poor optical properties mean that it is not preferred for photonic applications. Visible photoluminescence (PL) was observed from porous Si at room temperature in 1990, but the origin of these light emissions is still not fully understood. This paper reports that an Si nanocrystal, silicon nanoporous pillar array (Si-NPA) with strong visible PL has been prepared on a Si wafer substrate by the hydrothermal etching method. After annealing in O₂ atmosphere, the hydride coverage of the Si pillar internal surface is replaced by an oxide layer, which comprises of a great quantity of Si nanocrystal (nc-Si) particles and each of them are encapsulated by an Si oxide layer. Meanwhile a transition from efficient triple-peak PL bands from blue to red before annealing to strong double-peak blue PL bands after annealing is observed. Comparison of the structural, absorption and luminescence characteristics of the as-prepared and oxidized samples provides evidence for two competitive transition processes, the band-to-band recombination of the quantum confinement effect of nc-Si and the radiative recombination of excitons from the luminescent centres located at the surface of nc-Si units or in the Si oxide layers that cover the nc-Si units because of the different oxidation degrees. The sizes of nc-Si and the quality of the Si oxide surface are two major factors affecting two competitive processes. The smaller the size of nc-Si is and the stronger the oxidation degree of Si oxide layer is, the more beneficial for the luminescent centre recombination process to surpass the quantum confinement process is. The clarification on the origin of the photons may be important for the Si nanoporous pillar array to control both the PL band positions and the relative intensities according to future device requirements and further fabrication of optoelectronic nanodevices.