原子力显微术轻敲模式中探针样品接触过程及相位衬度研究

借助简单的有阻尼受迫振子模型，研究了原子力显微术轻敲模式中探针与样品接触时间t_c、样品的表面形变D_z和相位衬度对探针设置高度z_c及样品杨氏模量E_s的依赖关系.结果发现,t_c与D_z均随E_s及z_c的增大而减小，同时探针与样品作用过程伴随很小的能量耗散.对轻敲过程中相移量φ的研究表明，E_s较大的样品有较小的φ，且φ随 关键词： 原子力显微术 轻敲模式 相位衬度     

An approach to the detection of underwater remote target

An approach to the detection of underwater remote target by estimating its backscattering coefficient is presented. The key to this approach is that the echo signal is represented in state-variable model and the back-scattering coefficients of target are contained in dynamic noise of this model, thus underwater target can be detected by estimating this dynamic noise, i.e., deconvolving this model. When all noise statistics are a priori known, an optimum deconvolution algorithm based on the optimum state filter is derived, or else, an adaptive deconvolution algorithm based on the adaptive state filter of alternatively estimating the vector state and the noise statistics is developed. In the final simulation test, an echo signal with SNR equal to -6.1 dB is proceeded using the aforementioned two deconvolution algorithms, respectively, and the results demonstrate good performance of the approach.     

商标数据库存储模式及其检索算法研究

依据商标专家的先验知识和基于内容的图像检索技术，提出了一种新的商标库存储结构，并依据该存储结构设计了以三级检索算法为核心的实用商标登记注册管理系统，对于检索算法，一级检索采用人工确认，二级检索采用傅立叶描述子作为边缘特征向量，三级检索采用hu不变矩组作为矩特征向量，从而达到提高商标申请注册中的检索速度和查准率。     

Solutions for a Mode Ⅲ Growing Crack in a Piezoelectric Plane Under Two Kinds of Electric Boundary Conditions ＊

The solutions for a mode Ⅲ crack growing along an arbitrary propagation path in a piezoelectric plane are studied under the impermeable surface condition and the electrical contact surface condition respectively. According to the two kinds of electric boundary conditions, the Hilbert and Riemann boundary value problems in a half-plane including opening smooth arc are obtained from the theoretical analysis. Moreover, the equipollence of the solution formed under these two electric boundaries is proved, and unified solutions for the stress and electric displacement distribution in the crack-tipfield of the piezoelectric plane are achieved.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

Simulation of Patterns and Qualitative Analysis of Pattern Rotation in an End-Pumped Nd：YVO4 Laser

We simulate some laser output patterns observed in our previous experiment employing superposition of Laguerre- Gaussian modes. The rotating pattern is qualitatively analysed from the point of contemporary spatial burning hole effect of the lasing crystal.     

为学生打开自主学习的空间--一个高中物理教学案例与思考

现在，整个教育界都在提倡创新教育和自主探究式学习．笔者曾经尝试着在课堂上渗透让学生自主学习的思想，努力创设情景给学生多一些创新的机会，允许并鼓励他们在课堂上提出自己的看法．但课堂教学，特别是在目前仍受考试压力影响的高中课堂中，教师和学生依然面临着升学压力．无奈的现实很难在课堂上落实这些“理念”．毕竟学生这么多、课时这么少、教学任务又如此之重，作出一个教学决定又要考虑方方面面的因素，     

三种瓜环与4,4′-联吡啶及N,N′-二甲基4,4′-联吡啶盐酸盐相互作用的研究

以七元瓜环(Q[7])和新型椭圆型改性瓜环———对称四甲基取代六元瓜环(TM eQ[6])为主体,4,4′-联吡啶的盐酸盐(44)以及N,N′-二甲基4,4′-联吡啶的盐酸盐(dm44)为客体的主客体相互作用进行了考察.实验结果表明,Q[7]与客体44及dm44作用体系中,客体为了更有效地被主体Q[7]包结,在Q[7]内腔中呈倾斜状分布的几率最高.用核磁共振、循环伏安以及紫外吸收光谱对实验结果进行了印证和补充,验证了TM eQ[6]与客体44及dm44可发生较强的相互作用,形成一维的自组装超分子结构.核磁共振以及循环伏安方法的实验结果表明,没有观察到Q[6]与客体44及dm44的明显作用,而紫外吸收光谱方法证实,Q[6]与客体44确实存在一定的相互作用,比较主客体的结构特征,该作用体系也可能存在自组装的一维超分子结构等多种作用形式.     

斜向静磁场中光导波模式转换与衍射理论

应用经典场论和耦合模理论计算了斜向静磁场作用下，磁性薄膜波导中静磁波与导波光的相互作用.计算结果表明，与垂直静磁场情形相比，斜向静磁场时的相匹配条件有所变化，由于磁性薄膜波导中法拉第磁光效应增强等因素，导波光的Bragg衍射效率得以显著增加.这有利于应用YIG等低损耗磁性薄膜做成高衍射效率的磁光波导器件，亦有利于降低Bi∶YIG等高比法拉第旋转的磁光薄膜波导器件的体积和损耗.此外，理论指出的在斜向静磁场条件下所具有的一些磁光特性与实验结果亦符合得很好. 关键词：