离子注入层的X射线光电子能谱分析

采用金属蒸汽真空弧（MEVVA）离子源发出的强束流脉冲钨离子,对H13钢进行了离子注入表面改性研究,借助X射线光电子能谱（XPS）考察了注入表面层中钨,氧,铁的化学状态,研究发现,钨离子注入层中钨元素以替位钨和三氧化钨形式存在,铁元素以金属铁和三氧化二铁形式出现,而且各价态元素的原子比随深度而变化。     

离子注入剂量与酒精酵母存活率关系研究

研究了以低能离子注入为手段,来选育斯托尔酒精酵母。在此过程中,如何确定最佳的出发菌株注入时间和限定干燥时间,对所获得的离子注入剂量与酒精酵母存活率关系曲线进行了讨论。     

离子注入Pt的玻碳电极上甲酸和甲醛的电氧化

制备了离子注入Pt的玻碳电极(Pt/GC),注入剂量为5×10¹⁷ion/cm²,此电极的表面组成和各元素的浓度-深度分布用AES测量,注入Pt的价态用XPS测量.在0.5mol/LHClO₄溶液中,用Pt/GC电极和纯Pt电极研究了甲酸的电氧化行为,并在五种不同种类的电解质溶液中研究了甲醛的电氧化行为.结果表明,Pt/GC电极对甲酸和甲醛的电催化性能按真实表面积计算优于纯Pt电极.这可能与离子注入Pt过程中形成纳米团簇有关.此外,在同一电极上,甲醛在不同种类的电解质溶液中产生不同的氧化电流.说明阴离子对甲醛的电氧化过程有明显影响     

离子注入修饰电极及其在药物分析中的应用

对离子注入修饰电极的制备、特点及其在有机药物分析中的应用,作了简介和评述。     

铅离子辐照注碳4H—SiC的红外光谱特性研究

主要研究了铅离子辐照注碳4H—SiC样品在3个不同退火温度下傅立叶变换红外光谱的变化。从红外谱的变化可以知道铅辐照注碳4H-SiC样品在一定深度内出现了非晶层,波数在960—1450cm^-1范围内出现了干涉带,干涉带强度随着退火温度的升高而 变弱。1373K退火后样品的卢瑟福背散射分析结果显示,一定深度内硅原子的背散射产额明显减少。4H-SiC specimens were implanted with C-ions and then irradiated with Pb-ions, and subsequently annealed at three different temperatures. The samples were investigated by using Fourier transformation infrared spectrum（FTIR） and Rutherford backward scattering（RBS）. The obtained FTIR spectra showed that there is a buried amorphous layer close to the ion-incident surface and there are several interference fringes in the range from 960 to 1 450 cm ^-1. The intensity of fringes decreases with the increase of annealing temperature. The obtained RBS spectra showed that the yield of Si atoms in 4H-SiC crystal decreases in a well-defined depth region after annealing at 1 373 K.     

低能Co离子注入单晶ZnO的光致发光特性

采用离子注入法研究了Co离子注入ZnO晶体的光致发光效应。 对离子注入后的样品在Ar气保护下进行退火处理, 退火温度为700 ℃, 退火时间为10 min, 在其光致发光谱中观察到了406和370 nm的紫光发射峰。 对比了Co, Cu离子分别注入的ZnO晶体的光致发光谱, 观测到二者的光致发光谱类似。 同时, 研究了Co离子注入剂量对样品发光性质的影响, 结果表明随注入剂量的增加绿色发光中心逐渐向低能边偏移, 分析认为绿色发光中心的偏移与离子注入后ZnO晶体的禁带宽度发生改变相关。 In this paper, ion implantation techniques were used to study the photoluminescence(PL) of the Co implanted crystal ZnO. After Co ion implanted, the samples were annealed at 700 ℃ for 10 min in Ar gas flow. It was observed violet emission peak of 406 and 370 nm in the PL spectrum. The PL spectra of the ZnO crystal samples which were implanted by Co ions and Cu ions, respectively, have been compared and observed that the PL spectrum of the Co implanted ZnO is similar to that of the Cu implanted ZnO. We studied the influence of implantation dose on the PL of the Co implanted ZnO and found that the green luminescence centre shifted with increasing of implantation dose. It is concluded that the shift of the green luminescence centre is related to the change of ZnO band gap which was caused by ion implantation.     

Influence of ion species ratio on grid-enhanced plasma source ion implantation

Grid-enhanced plasma source ion implantation (GEPSII) is a newly proposed technique to modify the inner-surface properties of a cylindrical bore. In this paper, a two-ion fluid model describing nitrogen molecular ions N_2^+ and atomic ions N^+ is used to investigate the ion sheath dynamics between the grid electrode and the inner surface of a cylindrical bore during the GEPSII process, which is an extension of our previous calculations in which only N_2^+ was considered. Calculations are concentrated on the results of ion dose and impact energy on the target for different ion species ratios in the core plasma. The calculated results show that more atomic ions N^+ in the core plasma can raise the ion impact energy and reduce the ion dose on the target.     

氨甲蝶呤在Co/GC离子注入修饰电极上电化学行为及其应用研究

氨甲蝶呤在0.1mol/LHAc-NaAc(pH=4.96)缓冲溶液中,用Co/GC离子注入修饰电极进行伏安测定,得到一良好的还原峰,峰电位为-0.95V(vs.SCE).峰电流Ip与氨甲蝶呤的浓度在2.2×10^-7～8.8×10^-6mol/L范围内呈线性关系。检出限为1.1×10^-8mol/L.建立了测定氨甲蝶呤的新方法,可用于实际样品的测定,回收率在98.9%～106.2%之间。用线性扫描和循环伏安法研究了体系的电化学行为及电极反应机理。实验表明,氨甲蝶呤的还原为不可逆吸附过程,并伴随两个电子和两个氢离子参与电极反应。用俄歇电子能谱(AES)和X射线光电子能谱(XPS)等表面分析技术对Co离子注入修饰电极的表面元素组成及深度分布等进行测定,表明Co离子确被注入到玻碳表面。扫速对催化效率的影响实验证明体系存在催化作用。     

氮离子注入硅表面的力学性能及其微摩擦磨损行为研究

以单晶硅作为研究对象,选用离子注入剂量分别为5 ×1014 ions/cm2、6 ×1015ions/cm2和1 ×1017ions/cm2,注入能量为110 keV的氮离子注入单晶硅片,利用原位纳米力学测试系统对氮离子注入前后单晶硅片的硬度和弹性模量进行测定,在UMT-2型微摩擦磨损试验机上对氮离子注入前后单晶硅片的往复滑动微摩擦磨损性能进行研究.结果表明,氮离子注入后单晶硅片的纳米硬度和弹性模量减小,且注入剂量越大,其降低越明显.氮离子注入后单晶硅片的减摩性能提高,其摩擦系数大幅度降低,在载荷达到一定值后,氮离子注入层被迅速磨穿,摩擦系数迅速增加并产生磨痕.其磨损机制在小载荷下以粘着磨损为主,在大载荷下以材料的微疲劳和微断裂为主.     

LY12CZ铝合金表面等离子浸没离子注入氮层的摩擦磨损性能研究

对LY12CZ(2024)铝合金进行了氮等离子体浸没离子注入(PIII)处理,分析比较了不同工艺参数下离子注入前后试样的化学组成、各元素的化学价态及其摩擦磨损性能.结果表明:铝合金表面改性层中形成了弥散强化的氮化铝(AlN)相;与基体相比,铝合金试样在不同条件下处理后的表面显微硬度均有所提高,最大增幅达1.4倍;铝合金的磨损质量损失减少了75%,摩擦系数显著降低,表面综合性能得到了显著改善.