粒子与光电材料相互作用的应用基础研究获自然科学奖

据《济南日报》消息，在2006年1月10日召开的全国科技大会上，山东大学物理与微电子学院王克明教授完成的项目“粒子与光电材料相互作用的应用基础研究”获国家自然科学奖二等奖。该项目在离子注入光波导研究领域取得一些原创性成果，对进行跨学科新领域的课题研究具有重要的借     

离子注入剂量与酒精酵母存活率关系研究

研究了以低能离子注入为手段,来选育斯托尔酒精酵母。在此过程中,如何确定最佳的出发菌株注入时间和限定干燥时间,对所获得的离子注入剂量与酒精酵母存活率关系曲线进行了讨论。     

On the differentiability of depth distribution function of deposited energy, momentum and ion range

Based on the translational invariance of a medium,a new theorem has been proposed and proved rigorously:the depth distributions of the deposited energy,momentum and ion range must be infinitely differentiable functions in amorphous or polycrystalline infinite targets by ion bombardment,if these functions exist.The origin of the “discontinuity”,derived by Dr Glazov in 1995 in J.Phys.:Condens.Matter 7 6365,has been analysed in detail.For the power cross section,neglecting electronic stopping,the linear transport equations determining the depth distribution functions of the deposited energy and monentum (by taking the threshold enerkgy into account )have been solved asymptotically.An important formula derived by Dr Glazov has been confirmed and generalized.The results agree with the new theorem.     

低能Co离子注入单晶ZnO的光致发光特性

采用离子注入法研究了Co离子注入ZnO晶体的光致发光效应。 对离子注入后的样品在Ar气保护下进行退火处理, 退火温度为700 ℃, 退火时间为10 min, 在其光致发光谱中观察到了406和370 nm的紫光发射峰。 对比了Co, Cu离子分别注入的ZnO晶体的光致发光谱, 观测到二者的光致发光谱类似。 同时, 研究了Co离子注入剂量对样品发光性质的影响, 结果表明随注入剂量的增加绿色发光中心逐渐向低能边偏移, 分析认为绿色发光中心的偏移与离子注入后ZnO晶体的禁带宽度发生改变相关。 In this paper, ion implantation techniques were used to study the photoluminescence(PL) of the Co implanted crystal ZnO. After Co ion implanted, the samples were annealed at 700 ℃ for 10 min in Ar gas flow. It was observed violet emission peak of 406 and 370 nm in the PL spectrum. The PL spectra of the ZnO crystal samples which were implanted by Co ions and Cu ions, respectively, have been compared and observed that the PL spectrum of the Co implanted ZnO is similar to that of the Cu implanted ZnO. We studied the influence of implantation dose on the PL of the Co implanted ZnO and found that the green luminescence centre shifted with increasing of implantation dose. It is concluded that the shift of the green luminescence centre is related to the change of ZnO band gap which was caused by ion implantation.     

He离子注入的尖晶石中Au纳米颗粒的合成研究

利用20 keV的He离子注入表面蒸镀了Au薄膜的尖晶石（MgAl2O4）样品, 随后对注入样品进行了退火处理。 在紫外可见光谱上观察到了由于金属纳米颗粒的存在而引起的较强的表面等离子体共振吸收峰, 提供了材料中金属纳米颗粒形成的光谱证据。 并对形成的Au纳米颗粒的尺寸随退火温度以及He注入剂量的变化进行了研究。 Spinel deposited with a thin Au film was implanted with helium ions, and annealed in vacuum condition subsequently. The surface Plasmon resonance absorbance peak due to the existence of metallic nanoparticles in the dielectric matrix was observed on the Ultraviolet Visible Spectrometry, indicating the formation of metallic nanoparticles in spinel. The dependence of Au particles size with annealing temperature and implantation doses was also investigated.     

离子注入SiO_2玻璃的光吸收研究

本文用卢瑟福背散射和光吸收技术研究了高剂量Ag离子注入SiO_2玻璃以及退火后的状况.吸收光谱测量表明,注入的Ag离子聚集形成了胶态粒子,其等离子共振峰的极大值在400nm处.运用米(Mie)理论和德拜(Doyle)方法,根据测得的等离子共振峰的光宽度,估算出Ag胶态粒子的半径约为18(?).     

He注入单晶Si表面形貌的变化研究

沿Si的（100）面注入He离子, 能量为30 keV、 剂量为5×1016 ions/cm2。 注入后样品切成几块, 在真空炉中分别做退火处理, 退火温度从600 ℃到1 000 ℃, 退火时间均为30 min。 利用原子力显微镜研究了各个样品表面形貌的演化。 发现样品表面形貌与退火温度相关联。 假设在气泡中He原子与空位的比值很高, 导致样品内部存在高压的He泡, 从而使样品表面形貌发生变化。 探讨了在Si中He泡随退火温度的演化和He原子在材料中的释放机制及其对表面的影响。     

注氦尖晶石的红外光谱研究

利用傅立叶变换红外光谱仪对注He尖晶石样品随退火温变化而引起光吸收性能的变化进行了研究。 发现尖晶石样品在626.4 cm-1附近的吸收峰随注入剂量的增加向小波数方向移动, 而在随后退火过程该吸收峰随退火温度的增加而向大波数方向回复。 该吸收峰的回复行为依赖于注入剂量和退火温度。 认为在626.4 cm-1附近吸收峰随注入剂量和退火温度的这种变化与尖晶石中He的俘获以及释放有关。 The infrared absorption behavior of helium implanted spinel with annealing temperature was studied by Fourier transformed infrared (FTIR) spectroscopy. It was found that the absorbance peak at 626.4 cm-1 shifted to smaller wave numbers with the increase of implantation fluence, while on subsequent annealing the absorbance peak shifted back to larger wave numbers with the increase of annealing temperature. The shift of the peak at 626.4 cm-1 with He implantation/annealing is considered to be related with the trapping and release of helium atoms in lattice sites in the spinel crystal.