基于第二类Chebyshev多项式零点的Pal-型插值多项式的逼近

设{x_k}_(k-0)~n是n 1次多项式U_n(x)=(1-x~2)U_n(x)的零点,其中U_n(x)是第二类Chebyshev多项式。设是的零点。根据Pal的插值理论,对函数f∈C~1[-1,1],存在唯一的2n 1次多项式满足条件: 本文研究用Pal型插值多项式对函数f∈C~r[-1,1](r≥1)和它的导函数的逼近。     

A PICARD TYPE THEOREM AND BLOCH LAW

Ａ ＰＩＣＡＲＤ ＴＹＰＥ ＴＨＥＯＲＥＭ ＡＮＤ ＢＬＯＣＨ ＬＡＷ ￥ＹＥＹＡＳＨＥＮＧＡｂｓｔｒａｃｔ：Ａｐｉｃａｒｄｔｙｐｅｔｈｅｏｒｅｍｉｓｐｒｏｖｅｄ，ａｎｄａｃｏｕｎｔｅｒｅｘａｍｐｌｅｉｓｇｉｖｅｎｔｏｓｈｏｗｔｈａｔｔｈｅＢｏｌｃｈ...     

牛顿环实验的三种数据处理方法

本文就用牛顿环测定平凸透镜凸面的曲率半径的数据,以三种方法处理来进行对比。方法一用逐差法处理实验数据此法在现行教材中比较通用,主要是考虑到玻璃的接触状态引起的系统误差,因而就不直接从牛顿环直径D(k)去计算平凸透镜的凸面曲率半径R,     

Banach空间值鞅不等式与弱大数定律

本文证明了Ｂａｎａｃｈ空间值鞅的一些不等式，讨论了Ｂａｎａｃｈ空间的凸性及光滑性与某些鞅不等的式的联系，给出了Ｈｉｌｂｅｒｔ空间的一个鞅不等式刻划，同时还讨论了一致Ｐ光滑空间中鞅的弱大数定律，本文的结论推广与改进了很多熟知的定理。     

在气轨上验证牛顿第二定律实验的剖析

气垫导轨是60年代初出现在物理实验室的低摩擦实验装置,它为改善普物力学实验提供了很好的条件。但是要使实验达到比较高的水平,还必须考虑一些问题。本文仅就气轨上验证牛顿第二定律的实验进行分析,主要讨论实验应获得的结果、困难和措施,此外也讨论了对学生的要求。     

牛顿第二定律演示器

用一细长的电镀杆(或用细玻璃管嵌在木条上)作直轨道1,悬挂式小车2正面有一开口,可以取放砝码,下端安一支笔(可用一细笔管安上香烟的过滤嘴或泡沫塑料蘸墨水即可),以便自动记录小车的位置。直轨道的右上方有一个略小于直轨一半长度并可绕一端转动的斜槽轨道3,在后板适当位置做一弧形狭缝,用螺丝可将斜槽固定在所需     

一类非牛顿渗流方程爆破界的估计

本文利用拟线性常微分方程解的非存在性定理得到了一类拟线性反应扩散方程(非牛顿渗流方程)爆破界的估计,从而推广了半线性反应扩散方程(牛顿渗流方程)相应结果.     

有限域中的第二型本原根的阶及其范数

本文给出了有限域中第二型本原根是一个k次幂的条件,并讨论了第二型本原根的范数,所得结果描述了第二型本原根的(乘法)阶。     

Fission Barrier for ^240Pu in the Quadrupole Constrained Relativistic Mean Field Approach

The fission barrier for ^240pu is investigated beyond the second saddle point in the potentiM energy surface by the constrained relativistic mean field method with the newly proposed parameter set PK1. The microscopic correction for the centre-of-mass motion is essentiM to provide the correct potential energy surface. The shell effects that stabilize the nuclei against the fission is also investigated by the Strutinsky method. The shapes for the ground state, fission isomer and saddle-points, etc, are studied in detail.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.