波纹管内流动特性的实验研究

随着超导技术的发展,高温超导电缆在电力输运中逐渐得到重视并进行了广泛的研究.由于波纹管具有良好的柔韧性和收缩性,在高温超导电缆中得到应用.波纹管内的流动压力损失参数是高温超导电缆低温系统重要的设计参数,因而研究波纹管内的流动特性具有重要的意义.对通径为6 mm,8 mm和10 mm的波纹管内液氮和氮气的流动特性进行了实验研究.液氮实验结果表明:液氮在波纹管内的流动具有波动性.在4000～40000的雷诺数范围内,测量了氮气的质量流量和压力损失,计算得到流动摩擦系数.分析表明:压力损失随雷诺数的增大而增大;波纹管的摩擦系数要高于光管,摩擦系数随雷诺数的增大而减小,摩擦系数随t/d的减小而减小.     

并五噻吩分子光谱和激发态的密度泛函理论

首次采用密度泛函理论(DFT)中的B3LYP方法,在6-31G(d)水平上对并五噻吩进行了构型优化,并作振动分析,未出现虚频。频率分析得到分子红外光谱和拉曼光谱,同时也得到分子的HOMO-LUMO能隙为3.86eV,所得计算结果与实验值基本符合。利用含时密度泛函理论(TDDFT)计算其激发态,得到振荡强度最大的五个允许跃迁的单激发态,所有激发态光谱均在紫外波段,故在可见光区域分子相对稳定,不易光致分解。对前线分子轨道HOMO和LUMO分析得到,HOMO到LUMO的跃迁是电子从C原子转移到S原子上,C—C原子之间形成离域键,这正是并五噻吩区别于一般有机材料而具有导电性的根本原因。结果表明:相对于并五苯,并五噻吩具有更高的稳定性,同时具有很好的导电性能和发光性能,是新一类有机半导体材料。     

存在内禀退相干时二项式光场中原子的布居数反转

在Milburn内禀退相干模型下,研究了二项式光场与二能级原子相互作用系统中原子的布居数反转,分析了内禀退相干,二项式光场系数和场的最大光子数对原子布居数反转的影响.结果表明,存在内禀退相干时,原子布居数反转出现明显的崩塌-回复现象,随着时间的演化,Rabi振荡的包络值将很快的崩塌到零,并且随着内禀退相干因子的减小,衰减加剧;当内禀退相干因子不变时,二项式光场从相干态过渡到中间态,以及由中间态到数态过程中,原子布居数反转出现明显的崩塌-回复现象,而且Rabi振荡的频率会明显加快;当二项式光场的最大光子数增大时,原子布居差的崩塌-回复现象就会逐渐消失.     

利用风廓线雷达谱宽反演晴空湍流耗散率

 从晴天风廓线雷达的回波信号机制出发,研究了利用风廓线雷达谱宽反演晴空湍流耗散率的方法,即从雷达测量的多普勒速度谱宽中提取出湍流因素引起的谱宽,进而由湍流谱宽和湍流动能耗散率的关系计算出湍流动能耗散率。通过对合肥地区风廓线雷达谱宽资料的分析,得到合肥上空300 m高度上湍流动能耗散率的大小分布在10-4~10^-1 m²/s³之间,与理论相符,说明利用雷达谱宽反演湍流耗散率的方法可行。     

Spin Polarization and Andreev Conductance through a Diluted Magnetic Semiconductor Quantum Wire with Spin--Orbit Interaction

Spin-dependent Andreev reflection and spin polarization through a diluted magnetic semiconductor quantum wire coupled to normal metallic and superconductor electrodes are investigated using scattering theory. When the spin-orbit coupling is considered, more Andreev conductance steps appear at the same Fermi energy. Magnetic semiconductor quantum wire separates the spin-up and spin-down electrons. The Fermi energy, at which different- spin-state electrons begin to separate, becomes lower due to the effect of the spin-orbit interaction. The spin filter effect can be measured more easily by investigating the Andreev conductance than by investigating the normal conductance.     

Synchronization and Pattern Dynamics of Coupled Chaotic Maps on Complex Networks

The synchronization and pattern dynamics of coupled logistic maps on a certain type of complex network, constructed by adding random shortcuts to a regular ring, is investigated. For parameters where an isolated map is fully chaotic, the defect turbulence, which is dominant in the regular network, can be tamed into ordered periodic patterns or synchronized chaotic states when random shortcuts are added, and the patterns formed on the complex network can be grouped into two or three branches depending on the coupling strength.     

Third-Order Optical Nonlinearity in Novel Porphyrin Dimers

We investigate the third-order optical nonlinearities in four novel porphyrin dimers （dimers A to D） and a monomeric porphyrin H2 CPTPP measured by using the single-beam z-scan technique with a pulsed Q-switched Nd：YAG nanosecond laser at 532nm. All the samples show strong excited state absorption （ESA） and high value of Х^（3） in the ns domain at this wavelength. We perform a comparison between dimer A and its monomer H2 CPTPP in their third-order optical nonlinearity, and discuss the relationships between the values of Х^（3） and the different bridging groups for all the dimers.     

Hybrid Optoelectronic Bistability in Frequency-Domain and Its Potential Application in FBG Sensors

We propose a novel optical bistable device （OBD） in frequency-domain with which we can perform optical bistable operations in a number of fibre Bragg gratings （FBGs） which are included in the same OBD. Such an OBD may bring more opportunities in applications and, as an example, we show the possibility of using it in an FBG sensor demodulating system. By use of a tunable light source, consisting of a broad band source and a scanning fibre F-P （FFP）, we demonstrate the above-mentioned operations experimentally.     

Optical Defect in GaN-Based Laser Diodes Detected by Cathodoluminescence

GaN-based laser diodes （LDs） with 399 nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition （MOCVD）. Electroluminescence spectra of the fabricated LDs show that the LDs from some grown wafers failed to emit laser. The SEM and XRD results show the similar surface morphology and interface qualities of multi quantum wells （MQWs） and super-lattices between LDs that succeed and fail to emit laser. However, the cathodoluminescence （CL） measurements reveal a kind of optical defect rather than structural defect in un-emitted LDs. Further depth-dependent CL imaging observation indicates that such optical defects originate from the MQWs to the surface of LDs as a non-irradiative recombination centre that should cause the failure of laser emitting of LDs.     

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

ZnO homojunction light-emitting diodes are fabricated on Si（100） substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V. Distinct electrolumineseence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.