创造性思维训练在物理实验教学中的实践

第三次全国教育工作会议以来，创新能力与实践能力的培养越来越成为物理教学的重点与趋势．21世纪对人才的要求，也需要有创造力、协作能力和团队精神等科学素质．物理实验是培养学生科学素质的最有效途径，也是培养学生创造力与创造性思维的最佳途径．在获得诺贝尔物理学奖的物理     

抽样调查中最佳测量次数的确定

现场抽样调查中，由于测量误差的存在，使得所测变量实测值的方差增大，通过增加每个体的测量次数可以控制测量误差，但这样每个体调查费用增大。本文对测量信度Ｒ，每个体测量次数ｍ与相应所需的样本含量ｎｍ、调查费用Ｔｎ的关系进行了探讨，并介绍了如何根据Ｒ，及每个体测量费用占其总费用构成比Ｃ，确定最佳测量次数ｍ值，以达到最佳控制调查费用的目的，这对我们在大型现场调查中进行经济效益分析具有重大的理论指导意义。     

溶胶—凝胶法制备SiO2基片Er^3＋：Al2O3光学薄膜

用溶胶—凝胶法在SiO2基片上提拉制备了掺Er^3 ：Al2O3光学薄膜。采用扫描电子显微镜、原子力显微镜、差热—热重分析仪、X射线衍射仪研究了掺Er^3 ：Al2O3光学薄膜的肜貌和结构特性。在900℃烧结后，SiO2基片上提拉15次形成厚度8μm掺摩尔比0．01Er^3 的面心立方结构γ-Al2O3薄膜具有明显(110)择优取向，掺摩尔比0．01Er^3 对γ—Al2O3的品体结构和结晶生长过程木产生显著影响。薄膜具有均匀多孔结构，平均粒径为30～100nm，平均孔径为50～100nm，表面起伏度为10～20nm。掺摩尔比0．01Er^3 ：rAl2O3薄膜，获得了中心波长为1．534μm(半峰全宽为36nm)的光敛发光谱。     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

一种求解混合多目标规划问题的功效函数法

逻辑生长函数相对于龚珀兹生长函数具有拐点高和对称性的特点,采用逻辑生长函数形式的功效函数法求解混合多目标规划问题具有形式简单、计算量小、符合实际的优点。证明了用这种方法求出的最优解是有效解。讨论了满意值对有效解的影响。逻辑生长函数还可以应用于多维变量评价的功效系数法中。     

On Basic Constraint Qualifications for Infinite System of Convex Inequalities in Banach Spaces

The BCQ and the Abadie CQ for infinite systems of convex inequalities in Banach spaces are characterized in terms of the upper semi-continuity of the convex cones generated by the subdifferentials of active convex functions. Some relationships with other constraint qualifications such as the CPLV and the Slate condition are also studied. Applications in best approximation theory are provided.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究

利用原子力显微镜分析了ZnO薄膜在具有本征氧化层的Si(100)和Si(111)基片上的表面形貌 随沉积时间的演化. 通过对薄膜生长形貌的动力学标度表征，研究了射频反应磁控溅射条件 下，ZnO薄膜的成核过程及生长动力学行为. 研究发现，ZnO在基片表面的成核过程可分为初 期成核阶段、低速率成核阶段和二次成核阶段. 对于Si(100)基片，三个成核阶段的生长指 数分别为β₁=1.04，β₂=0.25±0.01，β₃=0.74；对 于Si(11 关键词： ZnO薄膜 磁控溅射 生长动力学 成核机制     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al2O3调制层厚度的TiN/Al2O3纳米多层膜.利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能.研究结果表明,在TiN/Al2O3纳米多层膜中,单层膜时以非晶态存在的Al2O3层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化,并与TiN层形成共格外延生长,相应地,多层膜产生硬度明显升高的超硬效应,最高硬度可达37.9 GPa.进一步增加多层膜中Al2O3调制层的层厚度,Al2O3层逐渐形成非晶结构并破坏了多层膜的共格外延生长,使得多层膜的硬度逐步降低.