S在Pt皮肤Pt_3Ni(111)面吸附的第一性原理研究

采用基于密度泛函理论的第一性原理方法,计算并分析了S原子在Pt皮肤Pt3Ni(111)面不同位置的吸附特性.结果表明:S原子在Pt皮肤Pt3Ni的fcc位吸附最强,吸附能为5.49eV;与S原子在纯净的Pt(111)表面吸附相比较,S原子在Pt皮肤Pt3Ni(111)面相应吸附位置的吸附能变小,与近邻Pt原子形成的S-Pt键变长,表明掺杂的Ni会减小相应位点S原子的吸附能,降低体系对S原子的吸附能力,进而减弱S吸附对体系催化能力的影响;态密度分析发现,S原子的吸附使得Pt基催化剂的催化活性降低,主要是S的2p电子引起的;这些结果将为后续研究Pt基合金电极抗S中毒效果以及探究S原子吸附后Pt3Ni的活性位提供依据.     

First-principles study on anatase TiO2（101） surface adsorption of NO

In this paper, the stable structure and the electronic and optical properties of nitric oxide （NO） adsorption on the anatase TiO2 （101） surface are studied using the plane-wave ultrasoft pseudopotential method, which is based on the density functional theory. NO adsorption on the surface is weak when the outermost layer terminates on twofold coordinated oxygen atoms, but it is remarkably enhanced on the surface containing O vacancy defects. The higher the concentration of oxygen vacancy defects, the stronger the adsorption is. The adsorption energies are 3.4528 eV （N end adsorption）, 2.6770 eV （O end adsorption）, and 4.1437 eV （horizontal adsorption）. The adsorption process is exothermic, resulting in a more stable adsorption structure. Furthermore, O vacancy defects on the TiO2 （101） surface significantly contribute to the absorption of visible light in a relatively low-energy region. A new absorption peak in the low-energy region, corresponding to an energy of 0.9 eV, is observed. However, the TiO2 （101） surface structure exhibits weak absorption in the low-energy region of visible light after NO adsorption.     

Improvement in a-plane GaN crystalline quality using wet etching method

Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.     

Numerical simulation of electron cyclotron current drive characteristics on EAST

Electron cyclotron current drive （ECCD） will be applied in the EAST tokamak during its the new campaign. In order to provide theoretical predictions for relevant physical experiments, some numerical simulations of ECCD with the parameters of EAST have been can＇ied out by using TORAY-GA code based on the understanding of ECCD mechanisms. ECCD efficiencies achieved in different plasma and electron cyclotron （EC） wave parameters are given. The dependences of ECCD characteristics on EC wave injection angle, toroidal magnetic field, plasma density, and temperature are presented and discussed.     

Theoretical study of molecular hydrogen and spiltover hydrogen storage on two-dimensional covalent-organic frameworks

Molecular hydrogen and spiltover hydrogen storages on five two-dimensional （2D） covalent-organic frameworks （COFs） （PPy-COF, TP-COF, BTP-COF, COF-18 A, and HHTP-DPB COF） are investigated using the grand canonical Monte Carlo （GCMC） simulations and the density functional theory （DFT）, respectively. The GCMC simulated results show that HHTP-DPB COF has the best performance for hydrogen storage, followed by BTP-COF, TP-COF, COF-18 A, and PPy-COE However, their adsorption amounts at room temperature are all too low to meet the uptake target set by US Department of Energy （US-DOE） and enable practical applications. The effects of pore size, surface area, and isosteric heat of hydrogen on adsorption amount are considered, which indicate that these three factors are all the important factors for determining the H2 adsorption amount. The chemisorptions of spiltover hydrogen atoms on these five COFs represented by the cluster models are investigated using the DFT method. The saturation cluster models are constructed by considering all possible adsorption sites for these cluster models. The average binding energy of a hydrogen atom and the saturation hydrogen storage density are calculated. The large average binding energy indicates that the spillover process may pro- ceed smoothly and reversibly. The saturation hydrogen storage density is much larger than the physisorption uptake of H2 molecules at 298 K and 100 bar （1 bar = 105 Pa）, and is close to or exceeds the 2010 US-DOE target of 6 wt% for hydrogen storage. This suggests that the hydrogen storage capacities of these COFs by spillover may be significantly enhanced. Thus 2D COFs studied in this paper are suitable hydrogen storage media by spillover.     

FeCl3催化2-(1-丙炔基)-2’-乙酰基联苯环化反应的机理研究

采用密度泛函理论的B3LYP方法研究了2-(1-丙炔基)-2’-乙酰基联苯分子内环化生成菲衍生物的反应机理。结果表明,该反应在无催化剂和FeCl3催化下均能通过四元环和八元环路径生成产物,其相应的决速步骤分别为四元环和八元环的生成过程。在无催化剂时,四元环路径和八元环路径的决速步骤的能垒相差仅6.8kJ·mol-1,两条路径为竞争反应。在FeCl3催化下,四元环路径决速步骤的能垒为137.52 kJ·mol-1,比八元环路径的低57.4 kJ·mol-1,为优势反应路径。该能垒比没有催化剂时低114.23 kJ·mol-1,表明FeCl3对于该反应具有强的催化作用,能够有效地提高反应速率,使反应在温和的条件下进行。     

三种低聚肽的物理化学性质的密度泛函研究

运用密度泛函理论对三种由不同氨基酸组成的低聚肽进行结构优化,并对其平均结合能和振动红外光谱进行分析,三种低聚肽分别为甘氨酸低聚肽、甘-丙氨酸低聚肽和甘-色氨酸低聚肽.本文主要研究,在肽链骨架相同而侧链基团不同的情况下,低聚肽的物理化学性质变化.结果表明,随着氨基酸残基数量的增加,三种低聚肽的结构稳定性都会增强,同时三种低聚肽也存在着尺寸效应,即官能团的振动都存在红移和奇偶振荡现象.侧链基团的引入会对低聚肽骨架的几何结构产生影响,在肽链生长过程中,侧链基团空间位阻大的分子优先自组装.本研究对应用红外光谱测定肽链基团和合成低聚肽等方面有一定指导意义.     

高活性氧化亚铜薄膜材料的绿色合成研究

本文采用一步脉冲雾化化学气相沉积法在250℃下制备了氧化亚铜薄膜催化剂.实验研究了前驱体中掺杂水对氧化铜薄膜表面形貌、拓扑结构、表面成分和光学特性的影响规律.结果表明所制得的催化剂为纯相的氧化亚铜.前驱体溶液中掺杂水会导致氧化亚铜的晶粒变小,从而使得共光学能隙从2.16 eV降至2.04 eV.原子力显微镜结果表明随着水的加入,氧化亚铜的表面粗糙度降低,表面更加均匀.此外,利用密度泛函理论计算得到了水和乙醇在氧化亚铜薄膜表面的吸附和反应特性,并提出了氧化亚铜的形成机理.本文开发了一种低成本且实际可行的薄膜制造方法,该方法在太阳能电池和半导体等领域具有潜在应用.     

Al掺杂浓度对ZnO陶瓷释能电阻材料性能的影响

为了制备ZnO释能电阻并研究Al掺杂浓度对ZnO释能电阻材料的影响,通过改进的制陶工艺制备了不同Al掺杂浓度的ZnO导电陶瓷。实验结果表明,Al掺杂浓度对ZnO释能电阻的导电性、能量密度和线性度均有较大的影响。Al的掺杂能较好地改善ZnO释能电阻的线性度,非线性系数可低至1.02;Al掺杂能很好地控制ZnO的电阻率,使其达到0.54 Ω·cm;Al掺杂还能较好地改善ZnO陶瓷的均匀性和密度,从而提高ZnO释能电阻的能量吸收密度,能量吸收密度高达720 J/cm³,较金属释能材料高出2~3倍。     

基于操作腔外原子比特控制腔内原子比特相干性时间演化

考虑初始处于两类Bell态的两原子比特,将其中一个注入真空态腔中发生共振相互作用的情况,研究基于操作腔外原子比特控制腔内原子比特相干性时间演化.考察对腔外原子比特施Hadamard(H)门,H类门,Y门及位相门四种逻辑门操作及态选择测量前后,腔内原子比特约化密度矩阵非对角元时间演化曲线,讨论两类Bell态之间的关联性.结果表明,对腔外原子比特操作前,腔内原子比特密度矩阵非对角元在任意时刻都为零,总是处于混合态或经典态,因此始终退相干.而对腔外原子比特施H门和H类门操作及基态测量后,腔内原子比特密度矩阵非对角元呈现周期为2π的时间演化,除(2n+1)π/2时刻外,其相干性得到恢复;在nπ时刻,其最大相干叠加态和一般相干叠加态被制备;两类Bell态之间存在R∧(π/2)旋转关联性.而对腔外原子比特施Y门及位相门操作后,腔内原子比特的相干性得不到恢复.发现腔内原子比特的相干性得到恢复的必要条件是,逻辑门操作能够调节腔内原子比特与环境的相互作用,并使两原子比特与场分离的同时,它们之间形成强相干性的纠缠态分布.