AMS为何最终放弃超导方案

国际空间站上的阿尔发磁谱仪(Alpha Magnetic SpectrometerAMS)是太空中第一个大型高能粒子探测器,用于探测反物质、暗物质和宇宙线。本刊2011年第5期曾有详细报道。AMS先后有2种型号:AMS01和AMS02。AMS01用永久磁铁,场强约0.15 T,重3吨,早在1998年已在发现号航天飞机上成功试飞过。AMS02安置在国际空间站上,原计划采用超导磁铁,场强约0.87 T,为此科学家们差不多花了近10年功夫,却在2010年离发射不到1年的时候决定放弃超导方案,仍用1998年已经试飞考验过的、场强较低的永磁方案。这到底是为什么呢?     

建议利用植物的超弱光辐射测量太空返回地面种子的生长状况

目前,在我国航天领域,科技人员对经过太空环境处理过的植物种子返回地面后所显示的优质丰产的生长状况进行了研究,取得了丰硕的成果。植物的超弱光辐射产生于植物细胞新陈代谢的光物理与光化学反应过程中,属于光能量参与植物细胞新陈代谢的多种产物之中的一种[1],可以利用这种植物的超     

加光子双模SU（2）相干光场的制备及其与∧型三能级原子相互作用的性质

提出了通过对分束器的条件输出测量制备加光子双模SU（2）相干光场的方案，并研究了∧型三能级原子与此双模光场相互作用系统中，加光子对原子布居概率及光场非经典性质的影响。结果表明，原子粒子布居概率发生改变，光场一模的光子数统计趋向于亚泊松分布，另一模趋向于超泊松分布，光场两模间相关度增大，非经典相关程度增强。     

Variable Separation and Derivative-Dependent Functional Separable Solutions to Generalized KdV Equations

Using the generalized conditional symmetry approach, a complete list of canonical forms for the Korteweg de-Vries type equations with which possessing derivative-dependent functional separable solutions (DDFSSs) is obtained. The exact DDFSSs of the resulting equations are explicitly exhibited.     

Formation Mechanism and Orderly Structures of an Iron Film System Deposited on Silicone Oil Surfaces

A new iron film system,deposited on silicone oil surfaces by vapour phase deposition method,has been fabricated and its formation mechanism as well as orderly structures has been studied,It is found that the formation mechanism of the films obeys a two-stage growth model,which is similar to that to the other metallic films on liquid substrates,Large and orderly structures are observed in the continuous iron films.The experiments show that the orderly spatial structures result from the local material gathering in these nearly free sustained films.     

Optical and Electronic Properties of InGaN／GaN Multi—Quantum—Wells Near—Ultraviolet Lighting—Emitting—Diodes Grown by Low—Pressure Metalorganic Vapour Phase Epitaxy

The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from l 0 mA to 50 mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

Growth of monodisperse nanospheres of MnFe_2O_4 with enhanced magnetic and optical properties

Highly dispersive nanospheres of MnFe204 are prepared by template free hydrothermal method. The nanospheres have 47.3-nm average diameter, narrow size distribution, and good crystallinity with average crystallite size about 22 nm. The reaction temperature strongly affects the morphology, and high temperature is found to be responsible for growth of uniform nanospheres. Raman spectroscopy reveals high purity of prepared nanospheres. High saturation magnetization （78.3 emu/g）, low coercivity （45 Oe, 10e = 79.5775 A.cm-1）, low remanence （5.32 emu/g）, and high anisotropy constant 2.84 × 10^4 J/m3 （10 times larger than bulk） are observed at room temperatures. The nearly snperparamagnetic behavior is ~ spin due to comparable size of nanospheres with superparamagnetic critical thameter Dcr spm The high value of Keff may be due to coupling between the pinned moment in the amorphous shell and the magnetic moment in the core of the nanospheres. The nanospheres show prominent optical absorption in the visible region, and the indirect band gap is estimated to be 0.98 eV from the transmission spectrum. The prepared Mn ferrite has potential applications in biomedicine and photocatalysis.     

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.