MgB2超导多层膜的制备方案

简要叙述了MgB2的发展和制备历史,通过对不同衬底材料上MgB2的反应情况的总结概括以及对不同衬底材料和MgB2的晶体结构和晶格常量的比较,提出一种MgB2超导多层膜的制备方案.     

楔形光纤与半导体多量子阱平面光波光路芯片的耦合分析

采用楔形光纤(WSF)实现了与半导体多量子阱(MQW)平面光波光路(PLC)芯片的高效耦合。在多量子阱-平面光波光路前置模斑转换器(SSC)和不加模斑转换器的情况下,用阶梯串联法(SCM)数值模拟并优化设计了楔形光纤-平面光波光路间最佳耦合参量:楔形光纤楔角45°、端面圆柱透镜曲率半径2.5μm、模斑转换器-多量子阱-平面光波光路出射椭圆光斑长半轴3.5μm、纵横比5、楔形光纤-平面光波光路间垂直方向和水平方向无偏移、纵向间距5.5μm。用反向推演法(IDM)实验分析了楔形光纤样品的出射光场,与阶梯串联法(SCM)计算结果相比长轴误差为3.125%,短轴误差为0.8%。建立楔形光纤-平面光波光路-单模光纤(SMF)的耦合实验系统,在1.55μm波长处以单模光纤作为出纤的相同条件下,发现楔形光纤激励入射平面光波光路比单模光纤和锥形透镜光纤(TLF)作为入纤的耦合效率分别提高了24.827 dB和16.22 dB,为多量子阱-平面光波光路芯片尾纤封装技术提供了实验原型。     

多组元化合物晶体生长过程中的双扩散对流现象

针对多组元化合物晶体的Bridgman生长过程,通过对液相区流场和浓度场的数值模拟,研究生长过程中容器内部双扩散对流与组分分布的情况.首先对比了三段场和梯度场炉壁温度设计情况下液相区的流体双扩散对流以及组分分布情况.在此基础上,针对梯度场炉壁温度条件,分析了不同参数的影响.结果表明:在溶质格拉晓夫数较大时,它的增大能够明显地削弱液相区的流体流动,从而使得界面附近的组分分布也产生变化;此外,拉晶速度的增大也能够使得液相区的双扩散对流受到抑制.     

流体力学中少变量的量纲分析法

量纲和谐原理指出,要正确反映一个物理现象所代表之客观规律,其所遵循的物理方程式各项的量纲必须一致.这是量纲分析法的基础,因此也以用这一原理来校核物理方程和经验公式的正确性和完整性.     

GaAIAs／GaAs非均匀阱宽多量子阱超辐射发光管材料制备及表征

超辐射发光二极管（SLD）具有不同于半导体激光器和普通发光二极管的优异性能。为了制备高功率半导体超辐射发光管，并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和，我们研究设计了具有850nm辐射波长的GaAlAs／GaAs非均匀阱宽多量子阱超辐射发光二极管结构，采用分子束外延（MBE）方法进行了材料制备。同时利用X射线双晶衍射，变温（10～300K）光致发光（PL）等方法检测分析了外延薄膜的结构和光电特性。在光致发光谱线中我们得到了发射波长850nm的谱峰，谱峰范围跨跃800～880nm，双晶回摆曲线结果显示了设计的结构得到实现。在注入电流140mA时，器件输出光谱的半峰全宽可以达到26nm，室温下连续输出功率达到6mw。     

气相色谱-质谱测定香烟灰中的多环芳烃

采用正己烷-二氯甲烷(体积比为1:1)索氏提取,硅胶柱净化技术,用气相色谱-质谱(GC-MS)的分段选择性离子监测(SIM)对烟灰中多环芳烃(PAHs)进行定性定量分析.通过优化19种PAHs的分离条件,SIM法实现烟灰中19种PAHs的同时测定,检出限达到0.02ng/mL.该法灵敏、准确,适合于烟灰等食品中多环芳烃含量的测定.     

Five-Dimensional Cosmological Model with Variable G and A

Einstein＇s field equations with C and A both varying with time are considered in the presence of a perfect fluid for five-dimensional cosmological model in a way which conserves the energy momentum tensor of the matter content. Several sets of explicit solutions in the five-dimensional Kaluza-Klein type cosmological models with variable G and A are obtained. The diminishment of extra dimension with the evolution of the universe for the five-dimensional model is exhibited. The physical properties of the models are examined.     

Teleportation of an n-bit one-photon and vacuum entangled GHZ cavity-field state

A scheme for teleporting an arbitrary n-bit one-photon and vacuum entangled Greenberger-Horne-Zeilinger （GHZ） state is proposed. In this scheme, the maximum entanglement GHZ state is used as a quantum channel. We find a method of distinguishing four Bell states just by detecting the atomic states three times, which is irrelevant to the qubit number of the state to be teleported.     

Elastic Modulus and Hardness of Cr-Nb Nano-Multilayers

Cr-Nb nano-multilayered films with various modulation wavelengths A are prepared by e-gun evaporation and their mechanical properties are investigated. Cr and Nb both have bcc structures with large differences in lattice constants and Young＇s modulus, which are supposed to favour modulus enhancement. Nevertheless, nano-indention measurements show no enhancement for the modulus and a slight decrease for the hardness with decreasing A down to 5 nm. This is mainly due to counter-contribution to modulus from adjacent layers subjected to reverse strains, in agreement with recent theoretical study, while the decrease of hardness arises from grain boundary sliding. Interestingly, at A = 3 nm, the hardness of the film has an increase of 44% relative to the value of a rule of mixture, owing to the emergence of a new phase for reconciling the structure difference at the interfaces.     

Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.