柱状分层固体媒质的声散射

本文评述了各向同性和横向各向同性柱状分层固体声散射理论和实验研究进展 ,介绍了描述圆柱状界面薄层特性的弹簧模型 ,也讨论了该领域中有待进一步研究的一些问题。     

关于负超几何分布期望与方差算法的注记

研究了非还原取样模型中负超几何随机变量的联合分布,得到了若干有用的推论.据此给出了负超几何分布的期望和方差的一种分解算法.     

泊松逆高斯回归模型的贝叶斯统计推断

本文研究泊松逆高斯回归模型的贝叶斯统计推断.基于应用Gibbs抽样,Metropolis-Hastings算法以及Multiple-Try Metropolis算法等MCMC统计方法计算模型未知参数和潜变量的联合贝叶斯估计,并引入两个拟合优度统计量来评价提出的泊松逆高斯回归模型的合理性.若干模拟研究与一个实证分析说明方...     

局部可数集族、局部有限集族与Alexandroff问题

本文引进分层强ｓ－映射和分层强紧映射建立具有σ－局部可数网、具有σ－局部可数ｋ－网、具有σ－局部可数基的正则空间以及σ－空间、－空间、ｇ－可度量空间和确定的度量空间之间的联系．这些都是对Ａｌｅｘａｎｄｒｏｆｆ问题的回答．     

计量调整型抽样检验系统GB/T6378-1986与ISO3951 :1989的比较分析

GB/T6378-1986作为计量抽样检验方面的基础性国家标准,是参照国际标准ISO3951:1989而制定的。1989年国际标准化组织ISO/TC69发布了ISO3951的修订版本ISO3951:1989,ISO3951的这一修订版反映了计量抽样检验的最新研究成果,为开展国家标准GB/T6378的修订工作,本文系统地对GB/T6378-86和ISO3951:89进行了比较分析研究。     

Inequalities of Hadamard Type for r-Convex Functions in Carnot Groups

For a Carnot group G,we establish the relationship between extended mean values and r-convexfunctions which is introduced in this paper,which is a class of inequalities of Hadamard type for r-convexfunction on G.     

氟诺喹酮类药物分子抗肺炎克雷伯氏菌的结构活性关系研究

利用主成分分析和分层聚类分析方法研究了具有抗肺炎克雷伯氏菌的氟诺喹酮类药物分子的结构活性关系．主成分分析方法表明变量ELUMO、ΔEHL、μ、Q3、Q5、QA、lgP、MP、MR能够有效地对抗肺炎克雷伯氏菌的氟诺喹酮类药物进行分类．分层聚类方法和主成分分析方法的结果一致．这表明两种方法都能够对新的具有抗肺炎克雷伯氏菌的氟诺喹酮类药物的分类提供一个可信的规律．利用主成分分析法和分层聚类分析法对其他4个氟诺喹酮类药物分子进行分析，结果都表明有三个药物分子具有较强的抗肺炎克雷伯氏菌活性，此结果和临床结果相吻合．     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.