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21.
HuRongjiang WuHeyu JinGenming ZhuYongtai DuanLimin XiaoZhigang WangHongwei 《近代物理研究所和兰州重离子加速器实验室年报》2003,(1):30-30
The dependences of He and intermediate mass fragments (IMF) production rates in the reactions 55 MeV/u ^40Ar ^58,64 Ni on the isospin, impact parameter and primary excitation energy of the reaction nuclear system were studied by using the 4π charged particle multi-detector array system (MUDAL). For the mentioned two reaction systems, the measured He particle contribution in the total charged particle multiplicity increases with increasing the total charged particle multiplicity but for the contribution of IMFs in the total charged particle multiplicity increases with increasing the total charged particle multiplicity at lower total charged particle multiplicities, and latter on it drops down with further increasing of the total charged particle multiplicities (see Fig.l). The experimental results of these two reaction systems with the same nuclear charge indicate that the contribution of He and IMFs in the total charged particle multiplicities are obviously isospin dependent. 相似文献
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The electronic structures for three types of PbW04 (PWO) crystals, the perfect PWO, the PWO containing lead vacancy (PWO-Vpb) and fluorine doped PWO crystal (F^-:PWO), are systematically studied within the framework of density functional theory. The computational results show that the Pb 6s state situates below the valence band so that Pb^2 ions are unable to trap holes forming Pb^3 or Pb^4 to compensate for VPb^2-. The hole-trappers in PWO-Vpb are O^2- ions. Two of the longer-bond O^2- ions share a hole forming O2^3-, and four of the longer-bond oxygen ions trap two holes forming an associated color centre [O2^3--Vpb-O2^3-], which may be the origin of the 42Onto absorption band. It is also concluded that the doping of F^- would reduce the band gap and F^- ions substituting for O^2- can effectively restrict the formation of [O2^3--Vpb-O2^3-] and weaken the 42Onm absorption band and hence enhance the scintillation property of PWO. 相似文献
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The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals. 相似文献
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Effects of External Electric Field on Ferroelectric Superlattice with Two Alternating Layers 下载免费PDF全文
The effects of the external electric field on the ferroelectric superlattice with two alternating layers have been studied using the transverse Ising model based on the effective-field theory with the differential technique. The hysteresis loops and susceptibility of the system have been given. The stronger the external electric field, the smaller the susceptibility, reflecting that the polarization is weaker. 相似文献
29.
达草灭对莱茵衣藻(Chlamydomonas reinhardtii) 品系遗传后效应的研究 总被引:1,自引:0,他引:1
通过将莱菌衣藻(Chlamydomonas reinhardtii)6种达草灭抗性突变株分别与野生型株、丧失合成叶绿素b能力的cbnI-43等基因突变株和精氨酸依赖型突变株杂交对其后代进行四分析与随机分析,发现在Nfr-4-Nfr-7突变株中达草灭抗性状只有单一核基因遗传的性质,而在Nfr-1、Nfr-3~Nfr-7抗性株的抗性性状都是由同一个nfr-1基因(norflurazon resisanse)的突变所决定的,而Nfr-4抗性株的抗性性状是由另一滚突变等位基因nfr-2所决定的。在Nfr-1和Nfr-3抗性株中除了nfr-1基因的突变还有nfr-3基因突变的参与。 相似文献
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从电子上看康普顿效应 总被引:1,自引:0,他引:1
在康普顿效应中,散射光子与入射光子的频率不同,但在电子静止的参考系,可以证明光子的频率在碰撞前后相同。 相似文献