有机/无机复合双层电子传输层的量子点发光二极管

采用有机/无机复合双层电子传输层（ETL）研制绿色QLEDs,其中有机ETL采用OLED中常见的ETL材料,无机ETL采用ZnO纳米颗粒,并通过调控有机ETL厚度改变电子注入,使电子/空穴达到平衡。制备的器件结构为:ITO/PEDOT:PSS/TFB/QDs/ZnO NPs/TPBI:Liq/Al,其中有机电子传输层TPBI:Liq采用真空蒸镀沉积。与仅采用ZnO电子传输层的器件相比,可以使器件性能得到大幅提升:器件的最大电流效率从11.53 cd/A提升到22.77 cd/A,同时器件的启亮电压、电致发光光谱无明显变化。判断有机ETL的主要作用是抑制了过量电子的注入和传输,在发光亮度变化不大的情况下,降低了器件的无效复合（例如俄歇复合）电流,从而使电流效率明显提升。     

Ergodic theorems for queuing systems with dependent inter-arrival times

We study a G/GI/1 single-server queuing model with i.i.d. service times that are independent of a stationary process of inter-arrival times. We show that the distribution of the waiting time converges to a stationary law as time tends to infinity provided that inter-arrival times satisfy a Gärtner-Ellis type condition. A convergence rate is given and a law of large numbers established. These results provide tools for the statistical analysis of such systems, transcending the standard case with independent inter-arrival times.     

The long term impact of a coherence based model for mathematics intervention

This article presents a large-scale longitudinal study of hundreds of students across the state of Kentucky that participated in a dual-focus mathematics intervention initiative when they were in the third grade. Rather than an exclusive focus on intervention, this initiative focused on both (i) high quality pull-out intervention and (ii) coherence between pull-out intervention and classroom instruction. The study found that over half of the third grade intervention students that participated in this initiative were classified as “novice” (the lowest possible performance category) on state standardized mathematics assessments at the end of the third grade. However, over the course of the following four years, the novice reduction rate of these students was significantly (p < .01) greater than other novices in Kentucky that did not participate in the initiative. These findings indicate that when implementing intervention initiatives to help students that are struggling with mathematics, it may be important to establish coherence between pull-out intervention and classroom instruction. The long term impact of this approach among traditionally underrepresented minorities suggest that this publication may provide insight into important equity issues where long-term analyses may sometimes be needed to capture the full impact of intervention initiatives.     

Growth and properties of wide spectral white light emitting diodes

Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum.     

Surface modification of Mg2B2O5 whisker and its effect on the mechanical properties and thermostability of polycarbonate/Mg2B2O5w composites

The Mg₂B₂O₅ whiskers (Mg₂B₂O₅w) were modified by boric acid ester (BE) coupling agent and used to prepare polycarbonate (PC) composites. Surface wettability test and evaluation of dispersibility of BE-modified Mg₂B₂O₅w (BE-Mg₂B₂O₅w) in n-heptane were carried out by water contact angle measurement and polarizing microscopy, respectively. The surface chemical characteristics of BE-Mg₂B₂O₅w and estimation of the amount of tightly bonded organic modifier were examined by Fourier transform infrared spectrometry (FT-IR) and thermogravimetric analysis (TGA), respectively. The influence of BE-Mg₂B₂O₅w on the mechanical property, morphology and thermostability of PC composites was investigated by using universal testing machine, scanning electron microscopy (SEM), dynamic mechanical analysis (DMA) and TGA, respectively. It was found that BE was successfully grafted to the surface of Mg₂B₂O₅w, and the hydrophobic BE-Mg₂B₂O₅w leads to high ratio of adhesion work to interfacial tension between PC and BE-Mg₂B₂O₅w, and its better dispersibility in n-heptane. Furthermore, the incorporation of BE-Mg₂B₂O₅w into PC matrix resulted in higher tensile properties of PC/BE-Mg₂B₂O₅w than that of PC/Mg₂B₂O₅w composites and lower maximum weight loss rate than that of PC. The storage modulus of the PC/Mg₂B₂O₅w composites increased obviously as a function of whisker content, especially for the composites with BE-Mg₂B₂O₅w, but the T_g value changed little.     

Lower bound of measure and embeddings of Sobolev,Besov and Triebel–Lizorkin spaces

In this article, we study the relation between Sobolev-type embeddings for Sobolev spaces or Hajłasz–Besov spaces or Hajłasz–Triebel–Lizorkin spaces defined on a doubling and geodesic metric measure space and lower bound for measure of balls either in the whole space or in a domain inside the space.     

Nonlinear obstacle problems with double phase in the borderline case

In this paper we study a double phase problem with an irregular obstacle. The energy functional under consideration is characterized by the fact that both ellipticity and growth switch between a type of polynomial and a type of logarithm, which can be regarded as a borderline case of the double phase functional with $(p,q)$-growth. We obtain an optimal global Calderón–Zygmund type estimate for the obstacle problem with double phase in the borderline case.     

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator.This paper discusses the electric field distribution,spectral response and transient response of the device.Due to utilizing p-SiCGe charge-compensation layer,the responsivity increases nearly two times and breakdown voltage increases 33%.The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time.With an increase of the light power density and wavelength,the rise time and fall time will become shorter and longer,respectively.In terms of carrier lifetime,a compromise should be made between the responsivity and switching speed,the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.