Solutions of the Yang–Baxter equations on quadratic Lie groups: The case of oscillator groups

A Lie group is called quadratic if it carries a bi-invariant semi-Riemannian metric. Oscillator Lie groups constitute a subclass of the class of quadratic Lie groups. In this paper, we determine the Lie bialgebra structures and the solutions of the classical Yang–Baxter equation on a generic class of oscillator Lie algebras. Moreover, we show that any solution of the generalized classical Yang–Baxter equation (resp. classical Yang–Baxter equation) on a quadratic Lie group determines a left invariant locally symmetric (resp. flat) semi-Riemannian metric on the corresponding dual Lie groups.     

Fragile black holes

The AdS/CFT correspondence may give a new way of understanding field theories in extreme conditions, as in the quark–gluon plasma phase of quark matter. The correspondence normally involves asymptotically AdS black holes with dual field theories which are defined on locally flat boundary spacetimes; the implicit assumption is that the distortions of spacetime which occur under extreme conditions do not affect the field theory in any unexpected way. However, AdS black holes are [to varying degrees] fragile, in the sense that they become unstable to stringy effects when their event horizons are sufficiently distorted. This implies that field theories on curved backgrounds may likewise be unstable in a suitable sense. We investigate this phenomenon, focussing on the “fragility” of AdS₅ black holes with flat event horizons. We find that, when they are distorted, these black holes are always unstable in string theory. This may have consequences for the detailed structure of the quark matter phase diagram at extreme values of the spacetime curvature.     

Unruh effect and holography

We study the Unruh effect on the dynamics of quarks and mesons in the context of AdS₅/CFT₄ correspondence. We adopt an AdS₅ metric with the boundary Rindler horizon extending into a bulk Rindler-like horizon, which yields the thermodynamics with Unruh temperature verified by computing the boundary stress tensor. We then embed in it a probe fundamental string and a D7 brane in such a way that they become the dual of an accelerated quark and a meson in Minkowski space, respectively. Using the standard procedure of holographic renormalization, we calculate the chiral condensate, and also the spectral functions for both the accelerated quark and meson. Especially, we extract the corresponding strength of random force of the Langevin dynamics and observe that it can characterize the phase transition of meson melting. This result raises an issue toward a formulation of complementarity principle for the Rindler horizon. We find most of the dynamical features are qualitatively similar to the ones in the thermal bath dual to the AdS black hole background, though they could be quite different quantitatively.     

La1/3Sr2/3Fe1-xCoxO3体系中的Co替代效应研究

本文通过对La1/3Sr2/3Fe1-xCoxO3系列样品进行X射线衍射(XRD)和变温电阻率(p～T)、比热(C～T)、磁化率(M～T)等测试,研究了Co掺杂对该系列样品的晶体结构和电热磁性质的影响.结果表明,随着Co掺杂量的增加,晶胞体积单调减小;电阻中电荷有序(charge ordering,CO)的特征逐渐消失.Co含量低的样品随着温度降低发生顺磁-反铁磁(PM-AFM)转变和金属-绝缘体(M-I)转变;Co含量高的样品则在磁转变温度以下表现出团簇玻璃型短程铁磁有序行为,并且在整个测量温区内具有金属导电特性.这些证明Co掺杂引起电子的局域化效应是导致体系电磁和输运行为发生变化的主要原因.     

小角X射线散射应用研究若干进展

文章从小角X射线散射（small-ande X-ray scattering，SAXS）的理论分析出发，结合国内外SAXS理论和应用研究的最新动态，总结了文章作者所在的研究小组近年来在SAXS技术用于材料微结构表征方面的研究成果。主要包括以下三个方面的内容：（1）有机／无机杂化材料中电子密度波动的研究；（2）弦长度分布函数材料的周期结构的研究；（3）纳米粉末晶化过程的研究。     

Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

The lifetime of electrostatically trapped indirect excitons in a field-effect structure based on coupled AlGaN/GaN quantum wells has been theoretically studied. Within the plane of a double quantum well, indirect excitons are trapped between the surfaces of the AlGaN/GaN heterostructures and a semitransparent metallic top gate. The trapping mechanism has been assumed to be a combination of the quantum confined Stark effect and local field enhancement. In order to study the trapped exciton lifetime, the binding energy of indirect excitons in coupled quantum wells is calculated by finite difference method in the presence of an electric field. Thus, the lifetime of trapped excitons is computed as a function of well width, AlGaN barrier width, the position of double quantum well in the device and applied voltage.     

3ω法加热/测温膜中温度波解析及其在微/纳米薄膜导热系数测量中的应用

给出了3ω法测试系统中描述薄膜表面加热/测温膜中温度波动的级数形式解，并将复数温度波动的实部和虚部分开表示.利用该解分析了交流加热频率、加热膜宽度和材料热物性的组合参数对加热膜温度波动幅度的影响.并根据此解对测量原理的数学模型进行了修正，建立了相应的3ω测试系统，首先测定了厚度为500 nm SiO₂薄膜的导热系数，验证了实验系统的合理性.加大了测试频率，利用级数模型在高频段直接得到SiO₂薄膜的导热系数，结合低频段的数据同时确定了Si基体的导热系数.利用级数解分析测试了激光晶体Nd:YAG〈111〉面上多层ZrO₂/SiO₂增透膜的导热系数，测试的ZrO₂薄膜的导热系数比体材料小.进行了不确定度分析.结果表明，提出的分析方法可以有效研究微器件表面薄膜结构的导热性能. 关键词： ω法')" href="#">3ω法 微/纳米薄膜 导热系数 微尺度加热膜     

Collective Diffusion and Strange-Metal Transport

We study a particular combination of charge and heat currents, which is decoupled with the heat current. The "heat-decoupled" (HD) current can be transported by diffusion at long distances, when the thermoelectric effect is small, large, or balanced. Using holographic models with momentum relaxation, we illustrate that the different thermoelectric effects correspond to the high temperatures and strong disorder, low temperatures, or special critical index. Meanwhile, the Einstein-like relation and the diffusion/chaos relation may be emergent. Assuming that the existence and features of HD modes appear in strange metals, we can predict that when the thermoelectric effect is not very large, the scaling of resistivity is predominantly controlled by the HD susceptibility and chaos; otherwise more physics is required.     

硅衬底生长的InGaN/GaN多层量子阱中δ型硅掺杂n-GaN层对载流子复合过程的调节作用

为了解决在单晶硅衬底上生长的InGaN/GaN多层量子阱发光二极管器件发光效率显著降低的问题,使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为n型层释放多层界面间的张应力。采用稳态荧光谱及时间分辨荧光谱测量,提取并分析了使用该方案前后的多层量子阱中辐射/非辐射复合速率随温度（10~300 K）的变化规律。实验结果表明引入δ-Si掺杂的n-GaN层后,非辐射复合平均激活能由（18±3）meV升高到（38±10）meV,对应非辐射复合速率随温度升高而上升的趋势变缓,室温下非辐射复合速率下降,体系中与阱宽涨落有关的浅能级复合中心浓度减小,PL峰位由531 nm左右红移至579 nm左右,样品PL效率随温度的衰减受到抑制。使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为生长在Si衬底上的InGaN/GaN多层量子阱LED器件n型层,由于应力释放,降低了多层量子阱与n-GaN界面、InGaN/GaN界面的缺陷密度,使得器件性能得到了改善。     

有机/无机复合双层电子传输层的量子点发光二极管

采用有机/无机复合双层电子传输层（ETL）研制绿色QLEDs,其中有机ETL采用OLED中常见的ETL材料,无机ETL采用ZnO纳米颗粒,并通过调控有机ETL厚度改变电子注入,使电子/空穴达到平衡。制备的器件结构为:ITO/PEDOT:PSS/TFB/QDs/ZnO NPs/TPBI:Liq/Al,其中有机电子传输层TPBI:Liq采用真空蒸镀沉积。与仅采用ZnO电子传输层的器件相比,可以使器件性能得到大幅提升:器件的最大电流效率从11.53 cd/A提升到22.77 cd/A,同时器件的启亮电压、电致发光光谱无明显变化。判断有机ETL的主要作用是抑制了过量电子的注入和传输,在发光亮度变化不大的情况下,降低了器件的无效复合（例如俄歇复合）电流,从而使电流效率明显提升。