宽带膜厚实时监控过程中膜层折射率的确定方法

为了准确计算出镀膜过程中每层膜的折射率，介绍了实时监控过程中确定膜层折射率的2种方法：一种是由实测的透射比光谱直接反算出膜层的折射率；另一种是用最小二乘法的优化算法实时拟合折射率。试验结果表明：在线反算适合单点监控，所得折射率误差小于2%。然而在实际镀膜过程中,由于宽带内膜层参数误差较大,一般大于25%。为此，采用最小二乘法拟合，即在整个宽光谱范围内采集每个波长点的信息，所得结果误差很小，一般都在2％～5%之间,有时可达到10%,在很大程度上提高了实际镀膜时膜厚监控的精度。     

Conjugate addition of pyrroles to α,β-unsaturated ketones using copper bromide as a catalyst

Copper bromide was used as a catalyst for the addition of pyrroles to enones. When both the reactants were used in equimolar amounts, mono and dialkylated products were obtained. However, the use of excess enone furnished only dialkylated products. Thus, copper bromide was shown to be an efficient catalyst for the dialkylation of pyrroles.     

Lower Bounds from State Space Relaxations for Concave Cost Network Flow Problems

In this paper we obtain Lower Bounds (LBs) to concave cost network flow problems. The LBs are derived from state space relaxations of a dynamic programming formulation, which involve the use of non-injective mapping functions guaranteing a reduction on the cardinality of the state space. The general state space relaxation procedure is extended to address problems involving transitions that go across several stages, as is the case of network flow problems. Applications for these LBs include: estimation of the quality of heuristic solutions; local search methods that use information of the LB solution structure to find initial solutions to restart the search (Fontes et al., 2003, Networks, 41, 221–228); and branch-and-bound (BB) methods having as a bounding procedure a modified version of the LB algorithm developed here, (see Fontes et al., 2005a). These LBs are iteratively improved by penalizing, in a Lagrangian fashion, customers not exactly satisfied or by performing state space modifications. Both the penalties and the state space are updated by using the subgradient method. Additional constraints are developed to improve further the LBs by reducing the searchable space. The computational results provided show that very good bounds can be obtained for concave cost network flow problems, particularly for fixed-charge problems.     

Application of Hilbert＇s Projective Metric on Symmetric Cones

Let Ω be a symmetric cone. In this note, we introduce Hilbert＇s projective metric on Ω in terms of Jordan algebras and we apply it to prove that, given a linear invertible transformation g such that g（Ω） = Ω and a real number p, ｜p｜ 〉 1, there exists a unique element x ∈ Ω satisfying g（x） = x^p.     

A triangular map with homoclinic orbits and no infinite ω-limit set containing periodic points

Recently, Forti, Paganoni and Smítal constructed an example of a triangular map of the unite square, F(x,y)=(f(x),g(x,y)), possessing periodic orbits of all periods and such that no infinite ω-limit set of F contains a periodic point. In this note we show that the above quoted map F has a homoclinic orbit. As a consequence, we answer in the negative the problem presented by A.N. Sharkovsky in the eighties whether, for a triangular map of the square, existence of a homoclinic orbit implies the existence of an infinite ω-limit set containing a periodic point. It is well known that, for a continuous map of the interval, the answer is positive.     

Ground-state properties of LiV2O4 and Li1-xZnx(V1-yTiy)2O4

We present susceptibility, microwave resistivity, NMR and heat-capacity results for Li_1-xZn_x(V_1-yTi_y)₂O₄ with 0 ? x ? 0.3 and 0 ? y ? 0.3. For all doping levels the susceptibility curves can be fitted with a Curie-Weiss law. The paramagnetic Curie-Weiss temperatures remain negative with an average value close to that of the pure compound Θ≈ - 36 K. Spin-glass anomalies are observed in the susceptibility, heat-capacity and NMR measurements for both type of dopants. From the temperature dependence of the spin-lattice relaxation rate we found critical-dynamic behavior in the Zn doped compounds at the freezing temperatures. For the Ti-doped samples two successive freezing transitions into disordered low-temperature states can be detected. The temperature dependence of the heat capacity for Zn-doped compounds does not resemble that of canonical spin glasses and only a small fraction of the total vanadium entropy is frozen at the spin-glass transitions. For pure LiV₂O₄ the spin-glass transition is completely suppressed. The temperature dependence of the heat capacity for LiV₂O₄ can be described using a nuclear Schottky contribution and the non-Fermi liquid model, appropriate for a system close to a spin-glass quantum critical point. Finally an ( x / y , T )-phase diagram for the low-doping regime is presented. Received 16 March 2001 and Received in final form 30 October 2001     

An admissible minimax estimator of a bounded scale-parameter in a subclass of the exponential family under scale-invariant squared-error loss

A subclass of the scale-parameter exponential family is considered and for the rth power of the scale parameter, which is lower bounded, an admissible minimax estimator under scale-invariant squared-error loss is presented. Also, an admissible minimax estimator of a lower-bounded parameter in the family of transformed chi-square distributions is given. These estimators are the pointwise limits of a sequence of Bayes estimators. Some examples are given.     

一致Banach空间中非扩张映象的弱收敛定理

设犈是一致凸Ｂａｎａｃｈ空间，满足Ｏｐｉａｌ条件或具有Ｆｒｅｃｈｅｔ可微范数，犆是犈的非空闭凸子集，且犜：犆→犆是非扩张映象．又设对任何初始数据狓１ ∈犆，序列｛狓狀｝由下列修改了的Ｉｓｈｉｋａｗａ迭代程序生成：狓狀＋１ ＝狋狀犜狀（狊狀犜狀狓狀＋ （１－狊狀）狓狀）＋ （１－狋狀）狓狀，　狀≥１， （Ｉ）其中，数列｛狋狀｝与｛狊狀｝满足下列条件（ｉ）和（ｉｉ）之一：（ｉ）狋狀∈ ［犪，犫］且狊狀∈ ［０，犫］；（ｉｉ）狋狀∈ ［犪，１］且狊狀∈ ［犪，犫］，这里，常数犪，犫满足０＜犪≤犫＜１．作者证明了，犜有不动点的充要条件是，｛狓狀｝ 弱收敛且｛‖狓狀－犜狓狀‖｝收敛到０．而且，由此即知，若犜有不动点，则｛狓狀｝弱收敛到犜的一个不动点．     

Projection of Markov Measures May Be Gibbsian

We study the induced measure obtained from a 1-step Markov measure, supported by a topological Markov chain, after the mapping of the original alphabet onto another one. We give sufficient conditions for the induced measure to be a Gibbs measure (in the sense of Bowen) when the factor system is again a topological Markov chain. This amounts to constructing, when it does exist, the induced potential and proving its Hölder continuity. This is achieved through a matrix method. We provide examples and counterexamples to illustrate our results.     

相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性

采用射频磁控溅射法制备了ZnS-SiO₂ 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO₂薄膜微结构和折射率n的影响.研究表明,ZnS-SiO₂薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO₂基体中,当溅射功率和溅射气压变化时,ZnS-SiO₂薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO₂介电薄膜.