Laser frequency locking based on the normal and abnormal saturated absorption spectroscopy of ~(87)Rb

We present a practical method to avoid the mis-locking phenomenon in the saturated-absorption-spectrum laserfrequency-locking system and set up a simple theoretical model to explain the abnormal saturated absorption spectrum. The method uses the normal and abnormal saturated absorption spectra of the same transition 5~2S_(1/2), F = 2–5~2P_(3/2), F'= 3 saturated absorption of the ~(87)Rb D_2resonance line. After subtracting these two signals with the help of electronics, we can obtain a spectrum with a single peak to lock the laser. In our experiment, we use the normal and inverse signals of the transitions 5~2S_(1/2), F = 2–5~2P_(3/2), F'= 3 saturated absorption of the ~(87)Rb D_2 resonance line to lock a 780-nm distributed feedback(DFB) diode laser. This method improves the long-term locking performance and is suitable for other kinds of diode lasers.     

大功率光导开关研究

设计了横向结构的半绝缘GaAs光导开关和SiC光导开关。在不同的直流偏置电压下,使用波长为1 064 nm的激光脉冲触发使开关导通,研究了非本征光电导方式下GaAs光导开关和SiC光导开关的光电导特性。实验中获得了GaAs光导开关的暗态伏安曲线和200~1 100 nm波长范围内吸收深度随波长的变化曲线,得到了大功率GaAs光导开关在线性模式和非线性模式下的电流波形,并进行了比较,讨论了非线性模式下大功率GaAs光导开关的奇特光电导现象。对非本征光电导方式下的SiC光导开关进行了初步实验研究,得到了偏置电压3.6 kV下开关的电压和电流波形。     

基于AlN膜钝化层VCSEL激光器热特性的研究

 用ANSYS有限元热分析软件模拟了基于AlN膜钝化层和SiO2膜钝化层的高功率垂直腔面发射半导体激光器(VCSEL)器件内部的热场分布和热矢量分布。经模拟得到基于AlN膜钝化层的VCSEL热阻为3.123℃/W,而基于SiO2膜钝化层的VCSEL的热阻为4.377℃/W。经实验测得基于AlN膜钝化层的VCSEL热阻为3.54℃/W,而基于SiO2膜钝化层的VCSEL的热阻为4.75℃/W,模拟结果与实验结果吻合较好。     

Effect of cadmium addition on the optical constants of thermally evaporated amorphous Se–S–Cd thin films

Se₇₅S_25−xCd_x is a promising ternary material, which has received considerable attention due to its applications in the fabrication of various solid state devices. These have distinct advantages, large packing density, mass replication, fast data rate, high signal-to-noise ratio and high immunity to defects. Measurements of optical constants (absorption coefficient, refractive index, extinction coefficient, real and imaginary part of the dielectric constant) have been made on Se₇₅S_25−xCd_x (where x = 0, 2, 4, 6 and 8) thin films of thickness 3000 Å as a function of photon energy in the wave length range 400–1000 nm. It has been found that the optical band gap and extinction coefficient increases while the value refractive index decreases on incorporation of cadmium in Se–S system. The results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. Due to the large absorption coefficient and compositional dependence of reflectance, these materials may be suitable for optical disk material.     

Temperature dependent carrier induced ferromagnetism in Zn(Fe)O and Zn(FeAl)O thin films

Epitaxial films of ZnO doped with magnetic ion Fe and, in some cases, with 1% Al show clear evidence of room temperature ferromagnetic ordering but containing huge amount of paramagnetic moment in it. The total ferromagnetic and paramagnetic contributions have been extracted from the low temperature SQUID measurements. A clear correlation between the magnetization per transition metal ion and the ratio of the number of carriers and number of donors have been found in these films and established the theory of carrier induced ferromagnetism. The experimental data has been best explained through the modification of electronic structure of oxide semiconductors with impurity states.     

基于Lab VIEW的半导体光源P-I特性测试系统

采用PCI-6251数据采集卡和LahVIEW平台。设计了一套半导体光源的P-I特性测试系统。该系统通过软件驱动数据采集卡为发光器件提供合适的驱动电压,采集发光器件的光功率和驱动电流,实现了P-I特性曲线的测量、分析和存储等功能。测试结果表明该系统设计成本低、测量效率高、人机界面友好、操作简单、扩展性强,适用于教学、实验及科研等领域。     

Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors

The DC, RF and noise characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base layer widths and δ‐doped layer in the collector were investigated. Analysis of the RF and noise characteristics revealed that the high frequency noise of these HBTs is reduced due to cross‐correlation of shot noise sources and Coulomb blockade from accumulated charge. The measured noise performance is in a good agreement with the HICUM L2 compact model [M. Schroter, IEICE Trans. Electron. E88‐C , 1098 (2005)] when correlated shot noise sources with Fano factor for collector shot noise are included.

     

Capacitive and Charge Transfer Effects of Single-Walled Carbon Nanotubes in TiO2 Electrodes

The transfer of nanoscale properties from single-walled carbon nanotubes (SWCNTs) to macroscopic systems is a topic of intense research. In particular, inorganic composites of SWCNTs and metal oxide semiconductors are being investigated for applications in electronics, energy devices, photocatalysis, and electroanalysis. In this work, a commercial SWCNT material is separated into fractions containing different conformations. The liquid fractions show clear variations in their optical absorbance spectra, indicating differences in the metallic/semiconducting character and the diameter of the SWCNTs. Also, changes in the surface chemistry and the electrical resistance are evidenced in SWCNT solid films. The starting SWCNT sample and the fractions as well are used to prepare hybrid electrodes with titanium dioxide (SWCNT/TiO₂). Raman spectroscopy reflects the optoelectronic properties of SWCNTs in the SWCNT/TiO₂ electrodes, while the electrochemical behavior is studied by cyclic voltammetry. A selective development of charge transfer characteristics and double-layer behavior is achieved through the suitable choice of SWCNT fractions.     

二维半导体材料纳米电子器件和光电器件

近年来,随着各领域对微电子器件集成度及性能要求的不断提高,发展基于二维半导体材料的新型高性能功能性器件成为了突破当前技术瓶颈的重要环节和关键方向。目前,作为新型二维半导体材料的代表,二维过渡金属二硫化物、二维黑磷以及范德瓦尔斯异质结凭借其在电学、热学、机械、光学等方面的优异性能已经成为了发展高性能纳米电子器件和光电器件的最具潜力的材料之一。在本综述中,首先概述了几种用于纳米器件的常见二维材料,分析了材料的结构、性能及其在纳米器件中的应用,其次重点对基于过渡金属二硫化物、黑磷以及由其衍生的范德瓦尔斯异质结的纳米电子器件和光电器件的最新研究进展进行讨论,最后对目前二维半导体纳米器件所面临的挑战以及未来的发展方向进行总结及分析,从而为未来发展高性能功能性纳米器件提供支持。