Impact of pressure on transport properties of AlGaN/GaN high electron mobility transistor

The properties of Al_xGa_1−xN/GaN high electron mobility transistor (HEMT) impacted by pressure are characterized quantitatively. The results indicate that the dislocation density increases as the critical thickness decreases with increasing pressure. The two-dimensional electron gas density was found to be linearly changeable with the pressure. A simulation has been completed to verify the influence of electron mobility. The results show that the misfit dislocation scattering induced by the pressure is a major limiting factor for the properties of HEMT.     

The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga_1−xIn_xN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga_1−xIn_xN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm² is obtained when inserting a 5 nm-thick p-type Ga_0.97In_0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

Stability,electronic, and optical properties of two-dimensional phosphoborane

The structure and properties of two-dimensional phosphoborane sheets were computationally investigated using Density Functional Theory calculations. The calculated phonon spectrum and band structure point to dynamic stability and allowed characterization of the predicted two-dimensional material as a direct-gap semiconductor with a band gap of ~1.5 eV. The calculation of the optical properties showed that the two-dimensional material has a relatively small absorptivity coefficient. The parameters of the mechanical properties characterize the two-dimensional phosphoborane as a relatively soft material, similar to the monolayer of MoS₂. Assessment of thermal stability by the method of molecular dynamics indicates sufficient stability of the predicted material, which makes it possible to observe it experimentally.     

烷基链工程对两亲有机半导体热力学性能影响的研究

Due to their special polar structure, amphiphilic molecules are simple to process, low in cost and excellent in material properties. Thus, they can be widely applied in the preparation of functional film materials and bionics related to cell membranes. Therefore, amphiphilic organic semiconductor materials are receiving increasing attention in research and industrial fields. The structure of organic amphiphilic semiconductor molecules usually consists of three functional parts: a hydrophilic group, a hydrophobic group, and a linking group between them. The adjustment of their correlation to achieve the target performance is particularly important and needs experimental discussion regarding synthetic methodologies. In this work, we focused on the engineering of a substituent alkyl-chain, and an amphiphilic functional molecule (benzo[b]benzo[4, 5] thieno[2, 3-d]thiophene, named C_nPA-BTBT, n = 3–11) was proposed and synthesized. This molecule links the hydrophobic semiconductor backbone and hydrophilic polar group through alkyl chains of different lengths. Fundamental properties were investigated by nuclear magnetic resonance (NMR) and ultraviolet-visible spectroscopy (UV-Vis) to conform the structure and the band gap properties of the designed organic semiconductor. Thermodynamic features were investigated by thermogravimetric analysis (TGA) and corresponding differential thermal gravity (DTG), which indicate that the functional molecule C_nPA-BTBT (n = 3–11) has a great stability in ambient conditions. Moreover, the results show that the binding ability of the amphiphilic molecule to water molecules was regulated by the odd-even alternating effect of the alkyl chain and the intramolecular coupling with BTBT. Furthermore, differential scanning calorimetry (DSC) and polarized optical microscopy (POM) were used to study the material properties in detail. As the length of the alkyl chain increased, the functional molecule C_nPA-BTBT (n = 3–11) gradually changed from "hard" species with no thermodynamic changes to a transition one with a pair of thermodynamic peaks, and eventually to a "soft" one as a typical liquid crystal with clear observation of Maltese-cross spherulites. The cooling and freezing points were further studied, and the values and trends of their enthalpy and corresponding temperature fluctuated and alternated due to the volume effect, odd-even alternating effect, flexibility, and other functions of the alkyl chain. Three molecular models were proposed according to the thermodynamic study results, namely the brick-like model, transition model, and liquid crystal model. This work presents in-depth discussion on material structure and corresponding thermodynamic properties, and it is an experimental basis for the design, synthesis, optimization, and screening of target performance materials.     

SERS Activity of Semiconductors: Crystalline and Amorphous Nanomaterials

Surface‐enhanced Raman scattering (SERS) spectroscopy on semiconductors has attracted increasing attention due to its high spectral reproducibility and unique selectively to target molecules. Recently, endeavors have been made in fabricating novel SERS‐active semiconductor substrates and exploring new enhancement mechanisms to improve the sensitivity of semiconductor substrates. This Minireview explains the enhancement mechanism of the semiconductor SERS effect in a brief tutorial and summarize recent developments of novel semiconductor substrates, in particular with regard to the remarkable SERS activity of amorphous semiconductor nanomaterials. Potential applications of semiconductor SERS are also a key issue of concern. We discuss a variety of promising applications of semiconductor SERS in the fields of in situ analytical chemistry, spectroelectrochemical analysis, biological sensing, and trace detection.     

(Ga,Mn)As光调制反射光谱

室温下我们研究了稀磁半导体(Ga,Mn)As的光调制反射(PR)光谱,观测到来自样品的Franz-Keldysh振荡(FKO)信号。随着Mn原子浓度的增加,PR线形展宽,但是临界点E₀和E₀+Δ₀没有明显的移动。根据FKO振荡数据,计算得到样品表面电场强度随Mn原子掺杂浓度的增加而增强。测量到与Mn原子掺杂相关的杂质带,其能量位置离GaAs价带边~100 meV。根据样品的表面电场强度和表面耗尽层模型,估算样品的空穴浓度为~10¹⁷cm^-3,较低的空穴浓度可能与样品具有较低的居里温度有关,或测量的PR信号来自于样品中外延层的部分耗尽区域。     

基于半导体光放大器的干涉型器件中噪声特性的分析

分析了基于半导体光放大器(SOA)的干涉仪分别处于“开”、“关”两种工作状态时的输出信噪比及噪声指数,发现当干涉仪处于“开”态时输出信噪比有所恶化,并导出了附加噪声因子的表达式。实验结果进一步证明了理论分析的正确性。     

光纤光栅对FBG-ECL静态特性的影响

光纤光栅外腔半导体激光器(FBG-ECL)在未来光通信系统占有着越来越重要的地位。根据FBG-ECL的等效腔模型,讨论了光纤光栅反射率、带宽对FBG-ECL的输出功率,阈值特性、边模抑制比等静态特性的影响。指出了存在最佳光纤光栅峰值反射率,不仅使得FBG-ECL具有更高的输出功率,而且可以获得极好的边模抑制比。最后根据实测在不同反射率下外腔激光器的激射光谱,发现理论分析结果和实验数据是吻合的。