基于Add-drop型微环谐振腔的硅基高速电光调制器设计

相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 μm. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图. 关键词： 电光调制器 绝缘体上的硅 微环谐振腔 载流子色散效应     

基于静力悬浮原理的单晶硅球间微量密度差异精密测量方法研究

单晶硅球间微量密度差异测量是阿伏伽德罗常数量子基准定义的重要研究内容, 也是半导体产业中高纯度单晶硅制备工艺质量控制的主要方法. 为了改善现有非接触相移干涉法测量装置复杂和静力称重法测量不确定度低的特点, 根据单晶硅密度精密测量需要, 实现了一种基于静力悬浮原理的单晶硅球密度相对参比测量方法. 通过改变静压力和温度进行三溴丙烷和二溴乙烷混合液体密度的微量调节, 分别使两个待测单晶硅球在液体中悬浮, 根据悬浮状态时的液体温度和悬浮高度计算出待测单晶硅球密度差值. 通过双循环水浴和PID温度控制系统实现±100 μK的恒温液体测量环境. 通过图像识别和迭代拟合算法实现单晶硅球悬浮高度的测量. 使用PID静压力控制系统实现单晶硅球的稳定悬浮控制, 同时减少Joule-Thomson效应引起的液体温度改变. 利用静力悬浮模型中的温度变化和静压力变化线性关系准确测量出标准液体的压缩系数. 试验结果表明, 这种测量方法可以避免液体液面张力的影响, 测量相对标准不确定度达到2.1×10^-7, 能够实现单晶硅球密度差值的精密测量.     

A DFT study of carbon monoxide adsorption on a Si4 nano-cluster

Using the gradient-corrected hybrid density functional method of Predew, Burke, and Ernzerhof (PBEPBE) and the new hybrid meta-density functional method of Truhlar (MPW1B95), the geometry, adsorption energy, vibrational frequency, and charge distribution of carbon monoxide adsorption on a Si₄ nano-cluster has been studied. Taking into account spin multicipility in the calculations, a new stable structure of CO absorbed on the Si₄ cluster has been found, in addition to the previously reported structures. Exhaustive vibrational frequency analysis of optimized structures shows that some of the formerly reported structures have imaginary vibrational frequencies and are not proper stable structures. Thus, they do not represent real local energy minima. Also, CO vibrational frequency analysis shows that a significant change of vibrational frequency in the stable structures occurs.     

The influence of incidence angle on disorder production in Cl and Ar ion implanted Si

Abstract

Cl and Ar ions have been implanted, at 30 keV and at various incidence angles, into Si substrates maintained at room temperature during implantation. Implantation induced Si disorder was measured using RBS channelling. The effects upon disorder of various incidence angles were studied over a fluence range of 10¹²-6·10¹⁵ ions·cm^?2

The results show that, at low fluences Cl and Ar ion implantations generate a bimodal disorder-depth profile, whilst at higher fluences measurements of amorphised layer thickness as a function of ion incidence angle allow values of the standard deviation of the disorder profile parallel and transverse to the ion beam direction for each ion to be obtained with good agreement to theoretical predictions. The disorder-fluence behaviour under these conditions is ion species independent.     

Temperature dependence of ion-induced auger electron emission from (111) silicon: I. Experiments

Abstract

Measurements of both secondary electron emission coefficient γ and SiL₂₃ Auger yield ρ_A obtained from (111) Si target bombarded by high fluence of noble gas ions were performed. For Si irradiated at room temperature at doses more than 10¹⁷ ions per cm², monotonous increasing variation of γ and ρ_A versus incidence angle i was observed. For Si irradiated at a temperature more than a critical value, γ(i) and ρ_A(i) curves exhibited, superimposed to monotonous variation, some minima when the ion beam penetrates the crystal along low index directions. In the range 20–650°C, the Auger yield temperature dependence showed a sharp variation around a critical value depending on the ion mass for a given incident energy. These results are linked to an amorphous-crystalline phase transition.     

Isotopic mass effects for low-energy channeling in a silicon crystal

Monte Carlo (MC) simulations have been used to study the low-energy channeling of ¹⁰B and ¹¹B ions along the [100] axis in Si crystal. MC simulations show that the critical angle Ψ_C ≈ 15.3(keV/E)^1/2 (in degrees) for the channeling of isotopic ¹⁰B ions and Ψ_C=14.5(keV/E)^1/2 (in degrees) for the channeling of isotopic ¹¹B ions, where E is the incident energy. This means that (Ψ_{C for 10B ions}/Ψ_{C for 11B ions})≈ (15.3/14.5)≈ (11/10)^1/2.     

Influence of 120 MeV Si9+ ion irradiation on ZnTe semiconductor thin films

ABSTRACT

ZnTe (Zinc Telluride) is a potential semiconducting material for many optoelectronic devices like solar cells and back contact material for CdTe-based solar cells. In the present study, ZnTe thin films were prepared by thermal evaporation technique and then irradiated with 120?MeV Si⁹⁺ ions at different fluences. These films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible spectroscopy techniques. XRD study confirms increased crystallinity and grain growth for post-irradiated ZnTe thin films for fluences, up to 1?×?10¹¹ ions cm^?2. However, the grain size and crystallinity decreased for higher fluence-exposed samples. SEM images confirm the observed structural properties. Modification of the surface morphology of the film due to the ion irradiation with different fluences is studied. Optical band gap of film is decreased from 2.31?eV (pristine) to 2.17?eV after irradiation of Si⁹⁺ ions.     

Travelling waves of phase transitions in porous media

Liquid–vapour phase changes for a fluid flow through a porous medium are considered; in particular, the model allows for phase mixtures and includes an equilibrium pressure. Existence and uniqueness of travelling waves is established in a wide range of situations; the end states may be formed either by pure phases or mixtures; in the latter case the pressure equals the equilibrium pressure. A formal asymptotic analysis for vanishing relaxation time is carried out to show that the friction and reaction source terms have smoothing effect when the pressure is close to the equilibrium pressure and pure phases are avoided.     

A porous medium equation with nonlocal boundary condition and a localized source

This article studies the blow-up properties of solutions to a porous medium equation with nonlocal boundary condition and a general localized source. Conditions for the existence of global or blow-up solutions are obtained. Moreover, it is proved that the unique solution has global blow-up property whenever blow-up occurs. Blow-up rate estimates are also obtained for some special cases.