超光滑加工精磨过程中损伤层与余量匹配的研究

对超光滑加工散粒研磨工序中采用的三级精磨法,进行了实验研究,通过改进差分化学刻蚀实验测出各级损伤层的厚度,利用损伤层厚度对加工余量匹配进行了优化。研究表明损伤层厚度与砂粒的粒径和压载之积成线性关系,与研磨时长无关;实验测得W28、W10、W5号磨料在实验条件下研磨加工产生的损伤层厚度分别为12.4μm、8.2μm、5.8μm;并根据损伤层厚度提出了加工余量的匹配建议方案。损伤层的相关研究为超光滑加工中提高生产效率以及减少麻点产生几率的研究提供了参考。     

Reception pattern influence on magnetoacoustic tomography with magnetic induction

Based on the acoustic radiation theory of a dipole source,the influence of the transducer reception pattern is studied for magnetoacoustic tomography with magnetic induction(MAT-MI).Numerical studies are conducted to simulate acoustic pressures,waveforms,and reconstructed images with unidirectional,omnidirectional,and strong directional transducers.With the analyses of equivalent and projection sources,the influences of the model dimension and the layer effect are qualitatively analyzed to evaluate the performance of MAT-MI.Three-dimensional simulation studies show that the strong directional transducer with a large radius can reduce the influences of equivalent sources,projection sources,and the layer effect effectively,resulting in enhanced pressure and improved image contrast,which is beneficial for boundary pressure extraction in conductivity reconstruction.The reconstructed conductivity contrast images present the conductivity boundaries as stripes with different contrasts and polarities,representing the values and directions of the conductivity changes of the scanned layer.The favorable results provide solid evidence for transducer selection and suggest potential practical applications of MAT-MI in biomedical imaging.     

阳离子交换皂石黏土在基质辅助激光解吸电离飞行时间质谱分析中的应用

将一种人工合成的无机聚合物——蒙脱石皂石黏土（smectite,Sm）应用于基质辅助激光解吸电离飞行时间质谱分析（matrix-assisted laser desorption/ionization time of flight mass spectrometry, MALDI-TOF-MS）,以检测糖类化合物。 将传统的有机基质2,4,6-三羟基苯乙酮（trihydroxyacetophenone, THAP）与阳离子交换后的皂石黏土混合制备成新型复合基质,应用于糖类化合物的检测。通过比较不同的制样方法,测定不同分子直径的糖类化合物,发现由于受复合基质晶面间距的限制,只有小分子糖类化合物能进入晶面间隙充分接触有机基质并被离子化,从而实现对小分子糖类化合物的选择性检测。     

ZnS作为空穴缓冲层的新型有机发光二极管

采用磁控溅射方法在ITO表面沉积了不同厚度的ZnS超薄膜作为有机发光二极管(OLEDs)的缓冲层,使典型结构(ITO/TPD/Alq3/Al)的OLEDs的发光性能得到改善。ZnS缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为5nm时,器件电流密度提高了近2倍,亮度提高了2倍;当ZnS缓冲层厚度为10nm时,器件发光的电流效率提高18%,器件的性能得到改善。宽禁带的ZnS缓冲层对空穴从阳极到有机功能层的注入有阻碍作用,促进器件载流子平衡,提高了器件发光效率,改善了器件性能。     

直接出射白光的新型发光二极管

介绍了实现出射白光发光二极管的几种方法,包括波长转化产生白光,多有源区级联合成白光以及单个有源区直接出射白光.并从芯片结构、材料选取、白光形成机理以及器件性能等四个方面对这几种方法进行了分析比较.最后指出了实现直接出射白光的发光二极管存在的问题及今后的研究重点.     

基于神经网络的钞票真假识别研究

利用神经网络与光电检测的技术研制了钞票真假识别系统.介绍了系统的结构组成、工作原理、软件系统、神经网络的优化设计、实验及测试结果.经实践验证,其识别结果稳定可靠,可应用于金融智能防伪点钞机与ATM机中.     

理想弹塑性固体Riemann问题的解结构与初值条件

针对理想弹塑性固体材料的一维Riemann问题,在不考虑真空的情况下,讨论其所有可能存在的解结构,给出每一种解结构下对应的初值条件且证明该系列初值条件的完备性,即任意给定的物理量初值均有且只有一种解结构与之对应.基于该理论,在设计精确或近似理想弹塑性Riemann问题求解器时,可以依据初值条件对任意物理量初值直接判断其对应的解结构,从而提高求解器的精度和效率.数值试验验证了该系列初值条件的正确性和有效性.     

Impact of drifts in the ASDEX upgrade upper open divertor using SOLPS-ITER

SOLPS-ITER L-mode-like simulations with the full set of currents and drift velocities activated, and fluid neutrals have been carried out to interpret experimental results obtained in AUG. Drifts are critical to quantitatively reproduce the experimental results; however, simulations without drifts can also reproduce some trends qualitatively. The magnitude and dependence of the peak heat flux onto both targets on the upstream collisionality are, in general, in quantitative agreement within uncertainties with infrared thermography measurements in favourable field direction. The onset of power detachment is observed. In unfavourable toroidal field direction, a more symmetrical inner/outer target solution with regards to the power distribution is predicted, in agreement with experimental observations. However, also in unfavourable toroidal field direction, insufficient power is dissipated in the simulations and therefore q_{peak, inn} is overpredicted by up to a factor of 4 and q_{peak, out} by up to a factor of 1.5. The largest contribution to the sources due to radial transport in the energy balance equation is the radial divergence of the energy flux due to V_{E × B}.     

Effect of an Al-doped ZnO electron transport layer on the efficiency of inverted bulk heterojunction solar cells

Doping is a widely-implemented strategy for enhancing the inherent electrical properties of metal oxide charge transport layers in photovoltaic devices because higher conductivity of electron transport layer (ETL) can increment the photocurrent by reducing the series resistance. To improve the conductivity of ETL, in this study we doped the ZnO layer with aluminum (Al), then investigated the influence of AZO on the performance of inverted bulk heterojunction (BHJ) polymer solar cells based on poly [[4,8-bis [(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b’]dithiophene-2,6-diyl]-[3-fluoro-2[(2-ethylhexyl)-carbonyl]-thieno-[3,4-b]thiophenediyl ]] (PTB7):[6,6]-phenyl C71 butyric acid methyl ester (PC₇₁BM). The measured conductivity of AZO was ~10⁻³ S/cm, which was two orders of magnitude higher than that of intrinsic ZnO (~10⁻⁵ S/cm). By decreasing the series resistance (R_s) in a device with an AZO layer, the short circuit current (J_sc) increased significantly from 15.663 mA/cm² to 17.040 mA/cm². As a result, the device with AZO exhibited an enhanced power conversion efficiency (PCE) of 8.984%.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.