电磁脉冲耦合效应的等效源建模及应用

结合二端口网络理论和频域电磁场混合势积分方程的矩量法,对带有电缆线屏蔽体的电磁脉冲耦合效应进行了等效源模型建模。采用全波分析提取外部电磁脉冲干扰的等效源参数,利用场路结合的方法,以调制高斯脉冲为例,实现了屏蔽体内电路板上电磁耦合效应的分析。仿真结果表明:在0.1~7.5 GHz频带范围内,构建的电磁干扰等效源模型与商业软件仿真结果吻合得很好,可以为复杂电磁脉冲耦合效应的定量分析提供了一种有效便捷的研究方法,为电路工作安全防护提供理论参考。     

Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

The recent published experimental data of titanium oxide memristor devices which are tested under the same experi- mental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of mernristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coex- istence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance.     

多孔与平面硅电极界面的电化学行为

研究了重掺杂n-型单晶硅(CSi)在氢氟酸体系中生成多孔硅(PSi)的电化学行为,根据线性极化曲线,选取不同的电流密度,采用恒电流阳极极化法,制备了一系列多孔硅层。利用扫描电子显微镜对其进行了表面和断面形貌的表征,通过线性扫描极化技术和计时电位法,比较了单晶硅电极和多孔硅电极的电化学行为,分析了多孔硅形成前后的塔菲尔曲线和计时电位曲线,给出了多孔硅形成过程中的重要电化学参数,如腐蚀电流、开路电位、塔菲尔斜率等。并对其进行深入分析,根据实验结果,提出了单晶硅电极/电解质界面和多孔硅电极/电解质界面的结构模型,并利用该模型讨论了两种电极界面的电化学特性。     

Control of microwave signals using bichromatic electromechanically induced transparency in multimode circuit electromechanical systems

We theoretically investigate the tunable delay and advancement of microwave signals based on bichromatic electromechanically induced transparency in a three-mode circuit electromechanical system, where two nanomechanical resonators with closely spaced frequencies are independently coupled to a common microwave cavity. In the presence of a strong microwave pump field, we obtain two transparency windows accompanied by steep phase dispersion in the transmitted microwave probe field. The width of the transparency window and the group delay of the probe field can be controlled effectively by the power of the pump field. It is shown that the maximum group delay of 0.12 ms and the advancement of0.27 ms can be obtained in the current experiments.     

Design of a gap tunable flux qubit with FastHenry

In the preparations of superconducting qubits, circuit design is a vital process because the parameters and layout of the circuit not only determine the way we address the qubits, but also strongly affect the qubit coherence properties. One of the most important circuit parameters, which needs to be carefully designed, is the mutual inductance among different parts of a superconducting circuit. In this paper we demonstrate how to design a gap-tunable flux qubit by layout design and inductance extraction using a fast field solver Fast Henry. The energy spectrum of the gap-tunable flux qubit shows that the measured parameters are close to the design values.     

基于模拟退火遗传算法的三值FPRM电路功耗优化

在三值FPRM(Fixed-Polarity Reed-Muller)逻辑函数中,n变量函数有3ⁿ个固定极性.针对不同极性下FPRM电路功耗不同的特点,研究了三值FPRM逻辑表达式,提出一种基于模拟退火遗传算法的三值FPRM电路功耗优化方法.首先,根据三值逻辑函数表达式和开关信号传递理论,建立三值FPRM电路功耗估计模型;再利用模拟退火遗传算法对三值FPRM电路进行功耗最佳极性搜索,得到了功耗最低的FPRM电路;最后对13个MCNC Benchmark电路进行仿真.结果表明:与0极性相比,搜索到的最佳极性功耗平均节省了73.98%.     

Investigating mesoscopic circuits with the entangled state representations

By employing the continuous parameter entangled state representations, we investigate the energy level and the wave function for a capacitively and mutual-inductively coupled LC mesoscopic circuit. It is found that investigating the mesoscopic circuit in such representations can bring us the following conveniences. Firstly, the dynamical equation is naturally transformed into a single-variable differential equation. Secondly, the center-of-mass kinetic energy is included in the energy level of the system. Thus it is instructive to introduce the entangled state representation into the investigation of mesoscopic circuits.     

一种新型低噪声大动态范围小型前端电路的研制

设计了一款小型化、低噪声、大动态范围的前端处理电路,包括电荷灵敏前放、成形放大电路、单道脉冲幅度分析电路。前放的等效输入噪声≤1.5 keV,动态范围可达0~11 V,积分非线性 ≤0.11%。该电路为模块化电路,当前放与主放模块构成系统时,其分辨可以达到0.12%。当前放、主放模块与中国科学院近代物理研究所制作的离子注入型硅探测器构成系统时,采用239Pu 源进行测试,测得在5.157 MeV时的能量分辨约为0.82%;当主放、单道脉冲幅度分析模块与中国科学院近代物理研究所制作的碘化铯晶体探测器构成系统时,采用60Co 源进行测试,对于能量为1.332 MeV 的 射线,测得其能量分辨约为7.9%。该电路可用于半导体探测器、光电倍增管及电子倍增器等探测器信号的处理。目前,小型前端电路已经应用于中国科学院近代物理研究所自行研制的便携式盐湖卤水铀、钍、钾快速测量仪的原型样机,达到了预期效果。A small dimension front-end circuit with low noise and wide output dynamic range is introduced in this paper. The front-end circuit is made up of a charge sensitive preamplifier, a shaping circuit and a single channel pulse height analyzer. The equivalent input noise is under 1.5 keV. The output integral nonlinearity is less than 0.11% within the dynamic range of 011 V. And the circuit can be suitable for different conditions by different modules. The resolution was about 0.12% with the charge sensitive preamplifier and the main amplifier. The energy resolution of 0.82% was achieved for 5.157 MeV -rays from a 239Pu source with the charge sensitive preamplifier, the main amplifier and anion-injection silicon detector designed by the Institute of Modern Physics(IMP). An energy resolution of 7.9% was achieved for 1.332 MeV rays from a stationary 60Co source with the main amplifier, the single channel pulse height analyzer and a CsI scintillator detector designed by the IMP. The front-end circuit has the features of wide output dynamic range, simple structure, high level of integration,small dimensions, low noise, fast rise time of the output pulse and excellent stability. The front-end circuit can be applied to signal processing of semiconductor detectors, photomultiplier tubes and electrons multiplier. And the front-end circuit had been applied to a prototype of the portable rapid measuring instrument designed by IMP for measuring Uranium, Thorium and Potassium in the salt lake brine with goodtest result.