锁相环的相位模型与实验电路

讨论了锁相环的相位数学模型,给出了一种适合于数学的锁相环实验电路．     

A combinatorial interior point method for network flow problems

For solving minimum cost flow problems, we develop a combinatorial interior point method based on a variant of the algorithm of Karmarkar, described in Gonzaga [3, 4]. Gonzaga proposes search directions generated by projecting certain directions onto the nullspace ofA. By the special combinatorial structure of networks any projection onto the nullspace ofA can be interpreted as a flow in the incremental graph ofG. In particular, to evaluate the new search direction, it is sufficient to choose a negative circuit subject to costs on the arcs depending on the current solution. That approach results in an O(mn ² L) algorithm wherem denotes the number of vertices,n denotes the number of arcs, andL denotes the total length of the input data.     

III–V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks

The concept, the present status, key issues and future prospects of a novel hexagonal binary decision diagram (BDD) quantum circuit approach for III–V quantum large-scale integrated circuits (QLSIs) are presented and discussed. In this approach, the BDD logic circuits are implemented on III–V semiconductor-based hexagonal nanowire networks controlled by nanoscale Schottky gates. The hexagonal BDD QLSIs can operate at delay-power products near the quantum limit in the quantum regime as well as in the many-electron classical regime. To demonstrate the feasibility of the present approach, GaAs Schottky wrap gate (WPG)-based single-electron BDD node devices and their integrated circuits were fabricated and their proper operations were confirmed. Selectively grown InGaAs sub-10 nm quantum wires and their hexagonal networks have been investigated to form high-density hexagonal BDD QLSIs operating in the quantum regime at room temperature.     

用来激励高频超声换能器的电激励源

讨论了超声换能器的几种激励方法，分析了三种常用激励方法在激励高频超声换能器时的特点及其同局限性，我们雪崩ＭＡＲＸ电路制作的单极窄脉冲能地激励率高达１００ＭＨｚ的换能器并取得了较好的结果。     

Design Consideration for a Two-Distributed-Junction Tuning Circuit

We describe a novel method of designing a tuning circuit with two half-wave distributed junctions separated by a half-wavelength microstripline, which analytically determines the circuit parameters such as the minimum current density of the junctions and the characteristic impedances of the distributed junctions and the microstripline. The tuning circuit was approximated by simple transmission theory and then simplified with ideal circuit components for analysis. We applied Chebyshevs band-pass filter theory, in part, to optimize the circuit design. The analytical results revealed that a high characteristic-impedance ratio between the distributed junctions and the microstripline is necessary to obtain broadband matching using low-current-density junctions. The experimental results for all-NbN SIS mixers we designed with this method demonstrated double-sideband (DSB) receiver-noise temperatures of 6–10 quanta from 710 to 810 GHz for a mixer with a current density of only 4 kA/cm² (estimated C_JR_N product of 37 at 750 GHz). The RF bandwidth was broader than that of a conventional full-wave distributed SIS mixer with the same current density.     

On the Existence of Solutions of Quasivariational Inclusion Problems

Quasivariational inclusion problems are formulated and sufficient conditions on the existence of solutions are shown. As special cases, we obtain several results on the existence of solutions of general vector ideal, proper, Pareto, weak quasioptimization problems, quasivariational inequalities, and vector quasiequilibrium problems. Further, we prove theorems on the existence for solutions of systems of these inclusions. As a corollary, we obtain an ideal minimax theorem concerning vector functions.     

Simple Analog Complementary Metal Oxide Semiconductor Circuit for Generating Motion Signal

We proposed in this study a novel analog complementary metal oxide semiconductor (CMOS) circuit for generating a motion signal when an object moves, which is a simple structure. The proposed unit circuit was constructed using a previously proposed edge detection circuit and a novel proposed circuit for generating a motion signal which accepts an edge signal. The part for generating the motion signal was constructed using six metal oxide semiconductor (MOS) transistors and one capacitor. Results obtained by the simulation program with integrated circuit emphasis (SPICE) and the measured results of a test circuit constructed with discrete MOS transistors and the test circuit fabricated with a 1.2 μm CMOS process showed that the proposed unit circuit can output pulsed current (motion signal) when an object moves on the circuit. It was clarified from the SPICE results that the two-dimensional network constructed with proposed unit circuits can output motion signals. The size of the novel unit circuit is expected to be about 110 × 110μm² obtained by the 1.2 μm CMOS process. It is possible to arrange 90 × 90 unit circuits on a chip which has an area of 1 × 1cm². The aperture ratio is expected to be about 21%, which is twice as large as that of the previously proposed circuit. An integrated circuit for image processing in real time can thus be realized by applying the two-dimensional network constructed with the proposed circuits.     

Thermodynamics of Squeezed State for Mesoscopic RLC Circuits

We present a density matrix of a mesoscopic RLC circuits to make it possible to analyze the connection between the initial condition and the certain temperature. Our results show that the quantum state evolution will be closely related to the initial condition; the system evolves to generalized coherent state if it is in ground state initially, and evolves to squeezed state if it is in excited state initially. In addition, we also obtain squeezed minimum uncertainty state with satisfying certain condition in mesoscopic RLC circuit.     

楔形光纤与半导体多量子阱平面光波光路芯片的耦合分析

采用楔形光纤(WSF)实现了与半导体多量子阱(MQW)平面光波光路(PLC)芯片的高效耦合。在多量子阱-平面光波光路前置模斑转换器(SSC)和不加模斑转换器的情况下,用阶梯串联法(SCM)数值模拟并优化设计了楔形光纤-平面光波光路间最佳耦合参量:楔形光纤楔角45°、端面圆柱透镜曲率半径2.5μm、模斑转换器-多量子阱-平面光波光路出射椭圆光斑长半轴3.5μm、纵横比5、楔形光纤-平面光波光路间垂直方向和水平方向无偏移、纵向间距5.5μm。用反向推演法(IDM)实验分析了楔形光纤样品的出射光场,与阶梯串联法(SCM)计算结果相比长轴误差为3.125%,短轴误差为0.8%。建立楔形光纤-平面光波光路-单模光纤(SMF)的耦合实验系统,在1.55μm波长处以单模光纤作为出纤的相同条件下,发现楔形光纤激励入射平面光波光路比单模光纤和锥形透镜光纤(TLF)作为入纤的耦合效率分别提高了24.827 dB和16.22 dB,为多量子阱-平面光波光路芯片尾纤封装技术提供了实验原型。