The transmission performance degradation of the optical millimeter-wave signals by fiber chromatic dispersion

The influence of the fiber chromatic dispersion on double sideband (DSB), optical carrier suppression (OCS), and single sideband (SSB) optical mm-wave signals is investigated based on the Taylor expansion of the propagation constant and is verified by simulation. According to our theoretical results, the fading effect suppresses the signal power of the DSB optical mm-wave periodically in a cosine-like pattern, and it can be described by the zero-order Taylor expansion of the propagation constant. For the optical mm-wave with the signal modulated on two or more tones, the bit pulses of the mm-wave signal are distorted by the dispersion-inducing bit walk-off effect between tones, which is expressed by the first-order Taylor expansion of the propagation constant. Moreover, as the signal rate and the transmission distance are increased further, higher-order Taylor expansion of the propagation constant still degrades the optical mm-wave signal even if both the fading effect and the bit walk-off effect are eliminated completely. The distortion of the signal pulses of SSB optical mm-wave is derived based on the second-order Taylor expansion of the propagation constant. This degradation is verified by the simulation with the eye diagram evolution of the SSB optical mm-wave signal.     

不同撞击速度下穿燃弹侵彻陶瓷/铝合金复合靶板时弹芯破碎失效特性研究

为了研究12.7 mm穿燃弹以不同速度撞击陶瓷/铝合金复合靶板时弹芯的破碎及失效特性,开展了12.7 mm穿燃弹以434.5～844.6 m/s速度撞击SiC陶瓷/6061T6铝合金复合靶板的弹道试验,分析了弹靶的失效模式。弹芯在侵彻靶板后会产生不同尺寸的碎片,使用回收箱收集弹芯碎片并用不同孔径筛网对其进行筛分、称重,得到了不同撞击速度下弹芯碎片的质量分布,并对不同部位的弹芯碎片断口形貌进行了宏观和微观观测分析。研究结果表明:背板失效模式为碟形变形-剪切穿孔-花瓣形失效,试验后的弹芯碎片累积质量分布符合Rosin-Rammler幂率分布规律,且随着着靶速度的增大,小质量碎片质量增加;弹芯在冲击过程中等效直径较大碎片（大于8 mm）失效模式为拉伸脆性断裂,而等效直径小于2 mm的碎片上存在局部塑性剪切断裂。     

Investigation of the sapphire window on short MM waves band

A analytic method of the eguivalent network for RF sapphire window of 3mm diffraction radiation oscillator is given in the paper. Numerical simulate and experiment are carried out on 3mm wave band. The testing results show that the design method agrees with the practical windows, and it is the fast optimum method. We employ the universal method, the piece of the window can be equal to dielectric waveguide and one end of the window connects the coupling slit of the mirror of open cavity. The design window by means of this method is used satisfactorily on 3mm DRO. The tube operates in the 84 – 108GHZ band, the output power is about 250mW.     

Power limits in cylindrical gyromonotrons using TEon1 modes

Upper and lower limits to the output power of highly efficient gyrotron oscillators operating with TE_on1 modes, due to lower and upper limits on the cavity Q, are given.     

100 Jahre Einkristallzucht aus der Schmelze

Cars, television, mobile phones, digital cameras, cash machines: Daily life is strongly affected by microchips produced from high purity silicon single crystals via thin wafers. Most of these single crystals are prepared by a process invented by the German‐Polish scientist Jan Czochralski in 1916 in the “Kabelwerk Oberspree (KWO)” of the “Allgemeine Elektricitätsgesellschaft (AEG)” in Berlin‐Oberschöneweide. Czochralski discovered the famous method to pull single crystals by accident: Deep in thought, he dipped his pen not into an ink pot but into a crucible with liquid tin, both standing next to one another on his desk. Quickly he pulled his pen out and observed a thin thread of tin emerging from the tip. After etching, the thread was identified as a single crystal of tin. This observation is probably one of the most important technical inventions of the first half of the 20^th century. In 1917, he left the AEG in Berlin and worked in the metal research laboratory, later belonging to the “Metallgesellschaft”, in Frankfurt/Main. Until today, wafers of high‐purity silicon are prepared by the Czochralski method. Silicon wafers with 200 mm diameter were produced in 1990, 300 mm wafers in 2001. The production of wafers with 450 mm diameter was expected for 2016. Siltronic produced in 2009 the first dislocation‐free silicon single crystal with 450 mm diameter, and other companies followed. However, until now, the 450 mm technology is not standard. This is due to a combination of very high investment costs needed to establish the 450 mm technology and very low prices of microchips.     

高质量半绝缘Φ150mm 4H-SiC单晶生长研究

采用数值模拟研究PVT法Φ150 mm 4H-SiC单晶生长的功率、频率选择、坩埚位置及保温厚度等关键生长参数.研究表明Φ150 mm 4H-SiC单晶生长功率是2inch 4H-SiC生长功率的2倍,优化的加热频率在5 kHz以下,系统分析不同生长参数下生长腔内径向及轴向温度梯度的变化规律.在此基础上初步的进行了Φ150 mm 4H-SiC单晶的生长工作,获得了无裂纹、直径完整的高质量SiC衬底材料.拉曼光谱Mapping测量显示Φ150 mm SiC衬底全片无多型,均为4H-SiC晶型.X光摇摆曲线显示半宽小于30 arcsec.采用掺杂过渡金属V杂质,获得了电阻率超过5×109 Ω·cm的150mmSiC衬底.     

A multi-channel full-duplex 60-GHz-band radio-over-fiber system

We propose and simulate a novel full-duplex radio-over-fiber system using a single light source at central station (CS). The scheme is employed to generate 60-GHz optical millimeter wave at CS for down-link transmission while the same optical carrier is reused at base station for up-link connection. There is no additional laser source for the upstream data generation in the base station. The bidirectional full-duplex 2.5 Gb/s data are successfully transmitted over 40 km standard single-mode fiber (SMF). The power penalty for the down-link data after transmission over 40 km SMF is less than 0.6 dB, while for the up-link data, the power penalty after transmission over 40 km SMF is neglected. This system shows good performance over long-distance delivery and has important applicable value in high radio frequency (RF) sector and multi-channel full-duplex system.     

火炮发射步枪子弹的次口径实验技术

介绍了一种利用25 mm弹道滑膛炮发射7.62 mm步枪子弹的次口径实验技术。利用绝缘胶木弹托解决炮口径远大于子弹弹径的问题,使25 mm滑膛炮易于发射小口径子弹;在子弹后端胶粘一小质量同直径绝缘胶木圆柱,改变弹丸整体质心位置,使质心相对靠前,从而改善子弹发射后的气动弹道特性,保证弹道姿态;在目标靶前分别设置前后阻挡板,以分离、阻挡弹托及弹托碎片,保证弹道实验无附加的碎片效应。     

提拉法生长高质量氟化镁单晶

设计了适合提拉法生长氟化镁单晶体的温场,采用提拉法成功生长出了直径100 mm的高质量氟化镁单晶.晶体内无气泡等宏观缺陷、无开裂;通过精密退火处理后,晶体透过率达到95;,平均应力双折射小于0.5 nm/cm.上述结果表明采用提拉法可以生长高质量的氟化镁单晶.