Pure red electrophosphorescence from polymer light-emitting diodes doped with highly emissive bis-cyclometalated iridium(III) complexes

In order to develop highly emissive red phosphorescent materials for OLED application, novel bis-cyclometalated iridium(III) complexes were developed using the 1-(dibenzo[b,d]furan-4-yl)isoquinolinato-N,C^3′ (dbfiq) cyclometalating ligand. When 1,3-bis(3,4-dibutoxyphenyl)propane-1,3-dionate (bdbp) is employed as an ancillary ligand, Ir(dbfiq)₂(bdbp) 1 exhibits red photoluminescence (PL) at 640 nm with a quantum yield (Φ_PL) of 0.61 (in toluene, 298 K). Replacement of bdbp to dipivaloylmethanate (dpm) and acetylacetonate (acac) (Ir(dbfiq)₂(dpm) 2 and Ir(dbfiq)₂(acac) 3, respectively) does not affect the PL spectrum, but reduces Φ_PL to 0.55 and 0.49 for 2 and 3, respectively. Similar tendency is also found in the doped poly(methyl methacrylate) (PMMA) film, and 1 is more emissive (Φ_PL = 0.17) than 2 and 3 (Φ_PL = 0.08 and 0.06, respectively). Using 1 as a phosphorescent dopant, polymer light-emitting diodes (PLEDs) were fabricated, of which structure was ITO/PEDOT:PSS (40 nm)/PVCz:1:PBD (100 nm)/CsF (1 nm)/Al (250 nm). Pure red electroluminescence (EL) is obtained from the fabricated PLEDs, affording a CIE chromaticity coordinate of (0.68, 0.31). When 0.51 mol% of 1 is incorporated in the PVCz-based emitting layer, the PLED shows maximum luminance of 7270 cd m⁻² at 16.5 V, power efficiency of 1.4 lm W⁻¹ at 7.5 V, and external quantum efficiency of 6.4% at 9.0 V. PLEDs with the same structure and components were also fabricated using 2 and 3, and their device characteristics were investigated. In proportion to the PL quantum yields, 1 affords better device performance than 2 and 3. Owing to four butoxy groups introduced to the bdbp ligand, 1 exhibits high solubility in organic solvents such as chloroform and toluene, and thus, is an excellent red phosphorescent dopant for solution-processed OLEDs.     

聚芴类半导体光谱稳定性

有机半导体的物理和化学性质直接影响其光电器件的性能, 这为物理化学提出了新的研究内容与挑战. 其中, 聚芴类蓝光二极管的光谱稳定性及低能发射带(LEEB)的起源问题是国际上近十年的热点问题之一. 本文系统概述了低能发射带的现象、表征方法以及可能的形成机理, 包括链间作用导致的激基缔合物发射、器件制备或降解过程形成的芴酮缺陷发射、芴酮聚集态发射以及聚芴端羟基界面氧化导致的绿光发射. 本文综述各种物理掺杂和界面调控改善聚芴类二极管蓝光稳定性的策略, 着重论述非平面基团的空间位阻、分子构象与链的拓扑结构以及引入抗氧化受阻胺光稳定剂来提高其光谱稳定性策略.     

空穴传输基团修饰的吡嗪铱配合物的合成及其发光性质

设计合成了空穴传输性咔唑基团修饰的吡嗪配体, 2,3-二(4-(9-咔唑基甲基)苯基)-5-甲基吡嗪(CzMPMP)及其铱配合物Ir(CzMPMP)2(acac)(acac: 乙酰丙酮). 用核磁共振(NMR)、质谱、元素分析等方法对其进行了表征, 并用紫外-可见吸收光谱、液相和固相光致发光光谱对其光学性质进行了研究. 通过与没有咔唑取代基的2,3-二苯基-5-甲基吡嗪铱配合物Ir(DPMP)2(acac)进行对照, 说明咔唑基团对配合物的光学性质有显著影响. 不含咔唑取代基的配合物Ir(DPMP)2(acac)的固态光致发光光谱中存在很强的激活双体(excimer)峰, 而Ir(CzMPMP)2(acac)的固态光致发光光谱中未发现有激活双体峰; 并且在溶液中, 含有咔唑取代基的配合物Ir(CzMPMP)2(acac)较Ir(DPMP)2(acac)的光致发光强度有显著提高. 这些结果说明咔唑基团的空间位阻可以有效阻止配合物成膜时产生激活双体, 从而消除发射峰红移现象并提高发光效率.     

High power efficiency in single layer blue phosphorescent organic light-emitting diodes

High efficiency single layer blue phosphorescent organic light-emitting diodes (PHOLEDs) without any charge transport layer were developed. A mixed host of spirobifluorene based phosphine oxide (SPPO13) and 1, 1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) was used as the host in the emitting layer. A high maximum external quantum efficiency of 15.8% and a quantum efficiency of 8.6% at 1000 cd/m² were achieved in the single-layer blue PHOLEDs without any charge transport layer. The maximum power efficiency and power efficiency at 1000 cd/m² were 31.4 and 16.9 lm/W, respectively.     

n型掺杂PTCDA复合材料对有机发光二极管性能的提高

采用碳酸锂(Li2CO3)为n型掺杂剂,苝四甲酸二酐(3,4,9,10 perylenetetracarboxylic dianhydride,PTCDA)为母体材料,通过真空热蒸发方式制备了n型掺杂的PTCDA复合材料,将其作为电子注入材料应用到NPB/Alq3异质结有机电致发光器件中.研究发现,同LI2CO3:BC...     

光/电激发方式对AlGaInP及GaN基LED电学特性的影响

采用光激励与电激励的方式对AlGaInP与InGaN/GaN基LED的电学特性进行了表征,并重点比较分析了两种激励方式的下理想因子这一重要参数的差异.探讨了影响LED理想因子的因素,确定理想因子的适宜注入强度范围.研究结果表明:结温与注入强度是影响LED理想因子的重要因素;对于特定类型的发光二极管,空间电荷区起主导作用...     

聚合物发光二极管面光源的光热特性

运用传输矩阵法及MATLAB软件模拟计算了以MEH-PPV为发光材料的PLED面光源出光率,分析了发光层、PEDOT层、ITO层对器件出光率的影响.模拟分析了玻璃表面半球形、圆台形、圆锥形3种微形貌对器件出光率的影响.仿真结果表明,玻璃表面为圆锥形微散射层对提高器件出光率最有利,且出光均匀性最好.最后分析了PLED面光...     

新型螺芴类蓝光材料的合成与性能

通过一系列反应成功合成了一种新型螺芴化合物DCSF,通过核磁共振氢谱(¹H NMR)、核磁共振碳谱(¹³C NMR)、质谱(MS)、傅立叶-红外(FT-IR)光谱对其结构进行表征,利用紫外可见吸收光谱、荧光光谱研究其发光性能。以硫酸奎宁的0.05 mol/L的硫酸溶液为标准,测定其荧光量子产率为0.391。通过循环伏安曲线,计算出DCSF的HOMO和LUMO能级的能隙E_g为3.20 eV。     

Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation

The effect of two-step hydrogenation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hysteresis level of the conventional MIUC-Si TFTs caused a wide variation of the drain current with the previous gate voltage. As the plasma exposure time increased, the plasma hydrogenation commonly used for stability in poly-Si TFTs was found to increase the hysteresis level of MIUC-Si TFTs after a minimum point. This is because plasma-induced damages correlated with unique defects of MIUC-Si such as metal-related weak bonds, are accompanied by passivation. The following annealing repaired the damages. Consequently the hysteresis level was lower, which resulted in a narrower variation of the drain current.     

The enhanced performance of organic light-emitting diodes by using PCBM as the anode modification layer

[6,6]-Phenyl C₆₁ butyric acid methyl ester (PCBM) is used to modify an indium tin oxide (ITO)-coated substrate. Organic light-emitting diodes (OLEDs) using PCBM as the anode modification layer are fabricated. The dependence of performance on different PCBM thicknesses is also investigated. When the thickness of the PCBM film is appropriate, the brightness and efficiency of OLEDs are enhanced, which is attributed to an enhanced hole injection and an improved carrier balance. The enhancement of hole injection was ascribed to the formation of a dipole layer at the anode/organic interface.