两种红光铱配合物的合成和电致发光性能研究

以二(二苯基磷酰)胺(Htpip)作为辅助配体,与主配体2-(2,4-二氟苯基)异喹啉和2-(4-三氟甲基苯基)异喹啉合成了红光铱磷光配合物Ir(dfpiq)2tpip和Ir(tfmpiq)2tpip并得到了晶体结构。在CH2Cl2中发射光谱主要是MLCT发射,峰位置分别为622和600 nm,量子效率分别为15%和17%,而HOMO/LUMO能级分别是-4.80/-2.58和-4.73/-2.57 eV。在1150~1300(V·cm-1)1/2电场范围,Ir(dfpiq)2tpip的电子迁移率为6.61~8.49×10-6cm2·V-1·s-1,Ir(tfmpiq)2tpip的电子迁移率为6.08~6.61×10-6cm2·V-1·s-1。ITO/TAPC(60 nm)/Ir-complex(15wt%):CBP(50 nm)/TPBi(60 nm)/LiF(1 nm)/Al(100 nm)中基于Ir(dfpiq)2tpip的器件最大安培效率和功率效率分别为4.71 cd·A-1和1.82 lm·W-1,12.0 V时达到的最大亮度为18 195 cd·m-2。基于Ir(tfmpiq)2tpip的器件最大安培效率和功率效率分别为3.47 cd·A-1和1.51 lm·W-1,12.4 V时达到的最大亮度为14 676 cd·m-2。     

Color Point Tuning in Lu3−x−yMnxAl5−xSixO12:yCe3+ for White LEDs

A series of the solid‐solution phosphors Lu_3?x?yMn_xAl_5?xSi_xO₁₂:yCe³⁺ is synthesized by solid‐state reaction. The obtained phosphors possess the garnet structure and exhibit similar excitation properties as the phosphor Lu₃Al₅O₁₂:Ce³⁺, but with an effectively improved red component in the emission spectrum. This can be attributed to the energy transfer from Ce³⁺ to Mn²⁺. Our investigation reveals that electric dipole–quadrupole interactions dominate the energy‐transfer mechanism and that the critical distance determined by the spectral overlap method is about 9.21 Å. The color‐tunable emissions of the Lu_3?x?yMn_xAl_5?xSi_xO₁₂:yCe³⁺ phosphor as a function of Mn₃Al₂Si₃O₁₂ content are realized by continuously shifting the chromaticity coordinates from (0.354, 0.570) to (0.462, 0.494). They indicate that the obtained material may have potential application as a blue radiation‐converting phosphor for white LEDs with high‐quality white light.     

基于面式-三(2-(4-三氟甲基苯基)吡啶)合铱配合物为发光中心的高效绿光有机电致发光器件

用经典的方法合成了面式-三(2-(4-三氟甲基苯基)吡啶)合铱配合物(fac-Ir(tfmppy)₃), 并得到了其晶体结构。在CH₂Cl₂溶液中Ir(tfmppy)₃的发射光谱显示出了峰值位于525 nm的π→π^*跃迁吸收以及金属到配体电荷转移(MLCT)吸收, 色坐标(CIE)为(0.31, 0.62), 量子效率计算为4.59%(以Ru(bpy)₃]Cl₂为参照)。以Ir(tfmppy)₃为发光中心, 制备并研究了有机电致发光器件:ITO/TAPC (60 nm)/Ir(tfmppy)₃ (x%):mCP (30 nm)/TPBi (60 nm)/LiF (1 nm)/Al (100 nm)。4%掺杂浓度的器件在4 197 cd·m^-2的亮度下显示的最大电流效率为33.95 cd·A^-1, 在12.7 V时的最大亮度为43 612 cd·m^-2, 色坐标(CIE)为(0.31, 0.61)。利用瞬态电致发光法(transient electroluminescence (EL))、在1 300 (V·cm^-1)^1/2的电场强度下Ir(tfmppy)₃配合物的电子迁移率测定为4.24×10^-6 cm²·(V·s)^-1。非常接近于常用的电子传输材料八羟基喹啉铝(Alq₃)的电子迁移率。     

基于双极性铼配合物的低浓度淬灭电致发光器件

合成了一种含双极性9,9-双(9-乙基咔唑-3-基)-4,5-二氮芴(ECAF)配体的新型三羰基铼配合物Re(CO)3(ECAF)Cl,通过核磁共振氢谱及高分辨质谱对其结构进行了确定。以含有4,5-二氮-9,9-螺二芴(SB)配体的铼配合物Re(CO)3(SB)Cl作为参比物,对比研究了其热稳定性及光电性能。结果表明,与参比物的分解温度(366℃)相比,配合物Re(CO)3(ECAF)Cl有极好的热稳定性(热分解温度419℃)。由于富电子咔唑基团导致的能隙增大,相比参比物的发光波长(572 nm),Re(CO)3(ECAF)Cl的发光波长蓝移至565 nm。Re(CO)3(ECAF)Cl的发光量子效率(39%)稍高于参比物(37%)。以旋涂法制成电致发光器件后,基于Re(CO)3(ECAF)Cl器件的最佳掺杂浓度(质量分数)高达30%,是基于参比物器件的2.4倍,而且开启电压低至2.9 V,明显比参比物器件的4.0 V低,说明ECAF配体能有效抑制发光浓度淬灭,且明显改善了铼配合物的载流子传输性能。基于Re(CO)3(ECAF)Cl器件的最大电流效率及最大外量子效率分别为8.2 cd·A^-1和3.0%,低于参比物器件的9.7 cd·A^-1和3.9%。     

可控液体输运制备取向聚合物薄膜:面向性能增强的发光二极管

提出了一种由锥形纤维阵列引导的定向液体输运的简单策略, 实现了对聚二芳基芴(PODPF)的有序 排列. 通过热退火处理(～240 ℃), PODPF由无定形相转变为β相态, 制备的PODPF薄膜具有一定的取向性 并且结晶尺寸更大. 在去浸润过程中, 锥形纤维阵列能够精确控制三相接触线的后退, 从而使得共轭高分子在产生的定向应力作用下定向排列. 基于此制备了聚合物发光二极管(PLEDs)器件, 与由旋涂膜制备的器件相比具有更高的电流效率(1.53 cd/A)和更稳定的电致发光. 表明利用锥形纤维阵列可以制备高性能的有机发光 二极管.     

基于铜金属有机配合物的热活化延迟荧光材料

具有热活化延迟荧光(thermally activated delayed fluorescence, TADF)特性的配合物可以同时利用单重态和三重态激子,因此发光量子效率较高,近年来受到广大科研工作者的关注。特别是铜金属有机配合物,最低单重态和最低三重态的能量差较小,又可以通过不同配体或取代基进行调节,所以具有较好TADF性能。本文根据配位原子的类型,汇总和分析了近5年具有TADF性质的铜配合物的结构特点和发光性能,并简要讨论了其在有机发光二极管(organic light-emitting diodes,OLEDs)中的潜在应用。     

Flexible Alkylene Bridges as a Tool To Engineer Crystal Distyrylbenzene Structures Enabling Highly Fluorescent Monomeric Emission

To design ultrabright fluorescent solid dyes, a crystal engineering strategy that enables monomeric emission by blocking intermolecular electronic interactions is required. We introduced propylene moieties to distyrylbenzene (DSB) as bridges between the phenyl rings either side of its C=C bonds. The bridged DSB derivatives formed compact crystals that emit colors similar to those of the same molecules in dilute solution, with high quantum yields. The introduction of flexible seven-membered rings to the DSB core produced moderate distortion and steric hindrance in the DSB π-plane. However, owing to this strategy, it was possible to control the molecular arrangement with almost no decrease in the crystal density, and intermolecular electronic interactions were suppressed. The bridged DSB crystal structure differs from other DSB derivative structures; thus, bridging affords access to novel crystalline systems. This design strategy has important implications in many fields and is more effective than the conventional photofunctional molecular crystal design strategies.     

GaN发光二极管表观电容极值分析

利用正向交流(ac)小信号方法对GaN发光二极管的电容-电压特性进行测量,可以观察到GaN发光二极管中的负电容现象。正向偏压越大,测试频率越低,负电容现象越明显。测量到的负电容现象是表象,不存在负电容;提出GaN发光二极管p-n结的结电容在特定的正向电压范围内等效于可变电容。分析可变电容对正向交流小信号响应得到:特定参数的可变电容使结电容电流相位落后于交流小信号电压相位π/2,使得在测量中表现为负电容。发现表观电容-正向电压曲线的极值点与理论模型相吻合,证明了该理论模型的正确性。     

发光二极管放电实验现象分析

利用直流电源对发光二极管(LED)的结电容充电,切断直流电源后对LED的电压-时间特性进行测量。当充电电压低于LED复合发光的门槛电压,LED的电压-时间特性与普通二极管的相似。当充电电压高于LED复合发光的门槛电压,首次观察到:开始放电的瞬间会出现一个快速下降过程,快速下降到门槛电压以下;LED上的电压越高,快速下降到的电压越低。对该现象进行分析,得到一些新的结论。当LED的正偏电压高于复合发光的门槛电压后,出现了注入到扩散区的非平衡载流子随正偏电压的提高而减小的现象,即dQ/du<0。     

Nonlinear resonant tunneling diode (RTD) circuits for microwave A/D conversion

Short-duration electrical pulses play important roles in ultrafast time-domain metrology: they are used to sample rapidly varying signals or as probe signals in ranging radars, time-domain reflectometry and in communication. In this work, we design a nonlinear transmission, which is loaded with resonant tunneling diode to be suitable for microwave A/D conversion. A resonant tunneling diode (RTD) has a negative differential resistance that means when the voltage increases the current decreases. The equivalent circuit of monostable line is given. The simulation is performed by using OrCad program. Results show that a spike is produced and after a charging time constant, another switching occurs. Hence – similar to a relaxation oscillator – the spiking period is determined by the amplitude and frequency of the input current. The transmission line itself ensures the generation and propagation of identical spikes, such as solitons formed after few diodes.