单摆周期的系统误差分析

文章逐个分析计算了单摆的摆角、摆球的自转、摆线质量、空气浮力以及空气阻力对于单摆周期的影响,以1 m长5°小幅单摆为例,得到这5种因素带来的系统相对误差分别为+0.45‰、+0.02‰、-0.45‰、+0.07‰、-0.14‰,合计仅为-0.05‰,即这5种误差因素几乎相互抵消,小幅单摆实验在理论上的系统误差极小.文章给出了较为详细的推理、计算和分析过程,尤其空气阻力矩的推理过程以及图、表等,意在提供较为完整和准确的认识.文末,针对人们在空气阻力认识上可能存在的某些不足,文章给出了几点必要的说明.     

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.     

Composition dependence of unipolar resistance switching in TaOx thin films

Amorphous TaO_x thin films were deposited at different temperatures, and the resistance switching properties of the Pt/TaO_x/Pt structure were investigated. X‐ray photoelectron spectroscopy showed that the amount of Ta₂O₅ in the film decreased and the content of Ta suboxides increased substantially when the growth temperature was increased. Unipolar resistance switching near the anode was stable only for TaO_x film grown at room temperature. The experimental results revealed the critical effect of the film composition on the resistance switching behavior of TaO_x films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Evaluation of surface characteristics under fretting of electrical contacts: Removal behaviour of hot dipped tin coating

The fretting corrosion behaviour of hot dipped tin coating is investigated at low fretting cycles at ±25 μm displacement amplitude, 0.5N normal load, 3 Hz frequency, 45-50% relative humidity, and 25 ± 1 °C temperature. The typical characteristics of the change in contact resistance with fretting cycles are explained. The fretted surface is examined using laser scanning microscope, scanning electron microscope and energy dispersive X-ray analysis to assess the surface profile, extent of fretting damage, extent of oxidation and elemental distribution across the contact zone. The interdependence of extent of wear and oxidation increases the complexity of the fretting corrosion behaviour of tin coating. The variation of contact resistance clearly revealed the fretting of tin coating from 50 to 1200 cycles and the fretting of the substrate above 1200 cycles. The observed low and stable contact resistance region and the fluctuating resistance region at various fretting cycles are explained and substantiated with Scanning electron microscopy (SEM), laser scanning microscope (LSM) and energy dispersive analysis of X-rays (EDAX) analysis results of the fretted surface.     

Ultrasonic irradiation and its application for improving the corrosion resistance of phosphate coatings on aluminum alloys

In this paper, ultrasonic irradiation was utilized for improving the corrosion resistance of phosphate coatings on aluminum alloys. The chemical composition and morphology of the coatings were analyzed by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). The effect of ultrasonic irradiation on the corrosion resistance of phosphate coatings was investigated by polarization curves and electrochemical impedance spectroscopy (EIS). Various effects of the addition of Nd₂O₃ in phosphating bath on the performance of the coatings were also investigated. Results show that the composition of phosphate coating were Zn₃(PO₄)₂ · 4H₂O(hopeite) and Zn crystals. The phosphate coatings became denser with fewer microscopic holes by utilizing ultrasonic irradiation treatment. The addition of Nd₂O₃ reduced the crystallinity of the coatings, with the additional result that the crystallites were increasingly nubby and spherical. The corrosion resistance of the coatings was also significantly improved by ultrasonic irradiation treatment; both the anodic and cathodic processes of corrosion taking place on the aluminum alloy substrate were suppressed consequently. In addition, the electrochemical impedance of the coatings was also increased by utilizing ultrasonic irradiation treatment compared with traditional treatment.     

Negative differential resistance behaviour in N-doped crossed graphene nanoribbons

By using first-principles calculations and nonequilibrium Green’s function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance (NDR) behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested.     

原子吸收光谱法测定与分析榛子抗寒性的研究

以榛子一年生枝条为试材,利用原子吸收光谱法和电导法分别测定与分析榛子3个种(6个无性系)不同低温处理后的K+渗出率和电解质渗出率,并建立了各无性系的低温-K+渗出率及低温–电解质渗出率回归模型。结果表明：利用2种方法综合评价各无性系抗寒能力结果一致,原子吸收光谱法测定K+渗出率指标可作为榛子无性系抗寒性的一种早期鉴定手段;6个无性系抗寒性大小排序为：C₇R₇＞Z-9-40＞C₆R₁＞CS₂R₁＞Z-9-22＞Z-9-30,3个种的抗寒性强弱顺序为：平榛＞平平欧杂交榛＞平欧杂交榛;各无性系半致死温度在-26～40 ℃之间。     

螺旋型爆磁压缩脉冲发生器电阻及磁通损失的数值计算

基于电流和磁扩散方程,讨论了螺旋型爆磁压缩脉冲发生器(MFCG)中的电阻与磁通损耗问题,将相关的接触电阻模型、欧姆电阻的趋肤效应与邻近效应模型具体应用到2维爆轰磁流体力学程序MF-CG-Ⅳ中,进一步完善了程序的物理功能。并选用美国德克萨斯理工大学简单绕制的螺旋型爆磁压缩脉冲发生器的实验结果对新增模块进行了考证,计算结果符合物理规律,且与实验测量吻合较好。     

改良干法压裂液摩擦阻力特性实验研究

对改良的干法压裂液这种非牛顿流体的摩擦阻力特性的正确认识,关系着干法压裂技术的有效实施.为此,本文在大型高压泡沫压裂液实验回路上,考察了在模拟实际施工条件下的改良干法压裂的摩擦阻力特性.实验表明:改良后的干法压裂液摩擦阻力系数随压力、温度的升高和泡沫质量的增加而增大,随流速的增加而减小.在实验范围内,温度对摩擦阻力系数的影响不大.实验得到了改良的干法压裂液摩擦阻力系数与广义雷诺数的关联式,平均计算误差为9.19%.     

Low resistance dye-sensitized solar cells based on all-titanium substrates using wires and sheets

Low resistance dye-sensitized solar cells (DSSCs) based on all-titanium substrates were proposed in this paper. To minimize the internal resistance of DSSCs, the titanium wires and titanium sheets were used as the substrates of the photoanode and the counter electrode, respectively. Compared with the FTO substrate, titanium wires could absorb much diffused light by back reflection since the reflectivity in the titanium sheet was highly increased up to 53.12%. Furthermore, the transmittance of the front cover was increased by 13.2% using the super white glass instead of FTO substrate. The thickness of TiO₂ thin film coated on titanium wire was optimized to achieve a high cell performance. The efficiency of 5.6% for the cell was obtained with a J_sc of 15.41 mA cm⁻², V_oc of 0.59 V, and FF of 0.62. The results showed that the titanium-based DSSCs had superiority for producing the large-scale DSSCs without metal grid line.