Sn/Pt[111]修饰电极对甲醇氧化的电催化

将Pt[111]电极分别浸在SnSO4 、Sn(SO4 )2 、SnCl4 溶液中,形成的Sn/Pt[111]修饰电极对甲醇氧化的催化效果不一样. 当浸渍溶液为Sn(SO4 )2 或SnCl4 时,在较高电势(0.8 V以上),Sn 能提高Pt[111]电极的电催化活性. 当浸渍溶液为SnSO4 时,Sn 却表现出阻碍作用.研究中还发现,吸附了Sn 的Pt[111]电极灼烧后表现出的催化活性超过浸渍形成的Sn/Pt[111]修饰电极.     

Solid-phase microextraction for the gas chromatography mass spectrometric determination of oxazole fungicides in malt beverages

This paper describes a method for the sensitive, selective, and solvent-free determination of six oxazole fungicide residues (hymexazol, drazoxolon, vinclozolin, chlozolinate, oxadixyl, and famoxadone) in malt beverages. Direct immersion solid-phase microextraction (DI-SPME) coupled to gas chromatography with mass spectrometry in the selected ion monitoring mode, GC-MS(SIM), is used. A comparison of the optimal fiber used, a polar carbowax-divinylbenzene 70-microm fiber, and a nonpolar polydimethylsiloxane 100-microm fiber was carried out. Optimal extraction conditions were 60 degrees C and an extraction time of 30 min under continuous stirring. Desorption was carried out at 250 degrees C for 5 min. Detection limits ranged from 0.006 to 0.3 microg L(-1) at a signal to noise ratio of 3, depending on the compound. The proposed method was successfully applied to malt beverages including malt, beer, and whisky, and none of the samples contained residues higher than detection limits.     

含稀土钇电极材料的声化学制备及电化学性能

通过超声浸渍法以不同浓度的Y(NO3)3溶液成功地制得几种声化学改性锌粉, 以期改善碱性电池锌电极的电化学性能. 利用扫描电镜(SEM)、X射线衍射(XRD)及电化学测试等方法考察了改性锌粉上Y(OH)3/Y2O3的形成及相应锌电极的耐腐蚀和循环性能. 结果表明, Y(NO3)3浓度为0.036 mol·L-1时, 声化学改性锌粉表面均匀分布着颗粒状的Y(OH)3/Y2O3, 且这些钇化合物优先生长在锌粉表面的缺陷位置, 阻挡了电化学过程中锌酸根离子向碱性电解液中的溶解与扩散, 使得相应锌电极的缓蚀效率达79.6%, 且20次循环伏安曲线的阴、阳极峰电位差比空白样减小了285 mV. 将这种改性锌粉和空白锌粉组装成模拟锌银电池, 在250 mA·cm-2的高放电电流密度下测试发现, 声化学改性锌粉的锌电极从1次到30次循环的放电容量损失仅为62.7 mAh·g-1; 且放电容量在50周期时达到322.6 mAh·g-1, 说明声化学改性锌粉可明显提高电极的放电容量和循环寿命.     

Plasma immersion ion implantation for silicon processing

Plasma Immersion Ion Implantation (PIII) is a technology which is currently widely investigated as an alternative to conventional beam line implantation for ultrashallow doping beyond the 0.15 μm technology. However, there are several other application areas in modern semiconductor processing. In this paper a detailed discussion of the PIII process for semiconductors and of actual as well as future applications is given. Besides the well known advantages of PIII — fast process, implantation of the whole surface, low cost of ownership — several peculiarities — like spread of the implantation energy due to finite rise time or collisions, no mass separation, high secondary electron emission — must be mentioned. However, they can be overcome by adjusting the system and the process parameters. Considering the applications, ultrashallow junction formation by PIII is an established industrial process, whereas SIMOX and Smart‐Cut by oxygen and hydrogen implantation are current topics between research and introduction into industry. Further applications of PIII, of which some already are research topics and some are only investigated by conventional ion implantation, include seeding for metal deposition, gettering of metal impurities, etch stop layers and helium implantation for localized lifetime control.     

浸渍法测量片状结晶性塑料密度的不确定度评估

按照GB1033-86中的浸渍法测量5种片状结晶性塑料的密度,分析了塑料密度测量的影响因素,如浸渍浓度、测量温度、样品称量等。利用测试数据及JJF1059-1999对浸渍法测量片状结晶性塑料密度的不确定度进行分析评估,得出测量结果的扩展不确定度为0．0073g／cm^3。     

S3到CP3中的等变极小浸入

研究常曲率的3维球面S3=SU(2)到复射影空间CP3中的等变极小浸入,证明了这种浸入不存在介于CR和Lagrangian之间的浸入,只能是Lagrangian浸入,从而是全测地的.     

AISI304钢表面低电压等离子体基离子注入层摩擦磨损性能研究

采用高频低电压等离子体浸没离子注入（ＨＬＰＩＩＩ）技术对ＡＩＳＩ３０４不锈钢表面进行了氮离子注入处理;用球－盘摩擦磨损试验机考察了注入处理后钢表面改性层的摩擦磨损性能;用扫描电子显微镜（ＳＥＭ）、俄歇电子能谱仪（ＡＥＳ）和Ｘ射线衍射（ＸＲＤ）考察了改性层的相组成、Ｎ元素的深度分布及磨损机理。研究结果表明：ＨＬＰＩＩＩ处理能够显著提高样品的摩擦学性能,且其摩擦学性能对温度有较大的依赖性,４００℃下处     

复射影空间中全实的2—调和等距浸入子流形

设M~n是CP~n(4)中全实的2——调和等距浸入子流形,若M~n紧致,则J_M〔∑aijk(h_ijk~a)~2+(n+1)‖B(f)‖~2-(n+5)‖τ(f)‖~2-(2-1/n)‖B(f)‖~4-‖τ(f)‖·‖B(f)‖~3〕*1≤0,其中h_ij~a是等距浸入的第二基本形式的分量,h_ijk~a是h_ij~a共变导数,H_a=(h_ij~a),‖B(f)‖~2=∑a t     

球面的高次标准浸入及其有限子流形

本文首先引人了球面到高维欧氏空间的高次标准浸人,然后应用这种标准浸入研究球面的有限型子流形,得到了若干结果.     

常曲率流形中2-调和等距浸入与k-调和映照的关系

设M和N是两个Riemann流形,如果映照f:M→N是能量泛函E_K(f)=1/2∫_M‖(d+d~*)~Kf‖~2*1的临界点,则称f为k-调和映照。本文讨论了2-调和等距浸入与K-映照之间的关系,获得了如下定理:设f:M→N是Riemann流形间的2-调和等距浸入,且M紧致,N具有常截面曲率,则f是k-调和映照(k≠2)当且