神光-Ⅱ装置三倍频实验中靶场单元技术的改进

 主要介绍为了满足神光-Ⅱ高功率激光装置三倍频光（351nm，3ω）的物理实验要求，靶场三倍频模拟光源和瞄准监视系统两个主要单元技术的改进，即三倍频模拟光源由基频光（1 053nm，3ω）通过腔外的KTP+BBO晶体倍频获得，再经八路分光系统和主激光耦合；瞄准监视系统由透射式光学系统改进为反射式光学系统，避免原系统存在较大的色差，提高瞄准精度。     

Electric field‐induced birefringence,optical rotatory power and conoscopic measurements of a chiral antiferroelectric smectic liquid crystal

Using a photoelastic modulator‐based novel set‐up, the electric field‐induced in‐plane birefringence and the optical rotatory power (ORP) were measured of an antiferroelectric liquid crystalline compound (12OF1M7) in its various phases using 30 µm homeotropic cells. Some specific signatures of the in‐plane birefringence and of the ORP for the various phases are being established. A relatively small threshold field is needed for the unwinding process of the antiferroelectric phase with a unit cell of four layers [SmC_A*(1/2)] compared with that for two layers [SmC_A*(0)]. On application of the electric field on the high temperature side of the SmC_A*(1/2) phase (80.1–81.5°C), a field‐induced phase transition is shown to occur directly to the SmC* phase, whereas on the lower temperature side (79.4–80.1°C) the transition takes place to SmC* via the SmC_A*(1/3) phase. The in‐plane birefringence exhibits a critical power law dependence for the SmC*–SmA transition. The ORP changes sign within the temperature range of the phase with a unit cell of three layers, reflecting a change in the handedness during this phase. Using tilted conoscopy, the results for the biaxiality and the apparent tilt angle for a smectic liquid crystal with a tilt angle greater than 18° in the ferroelectric phase are reported. The biaxiality implies the difference in the refractive indices between the two minor axes of the refractive index ellipsoid. The optical transmittance at visible and IR wavelengths for free‐standing films reveal characteristic reflection bands for these phases. The modulated structures of the reflected bands appear just above the SmC_A* phase and below SmC_A*(1/3); these are possibly due to an easy deformation of the phase by the surfaces.     

Photosensitivity,substituent and solvent-induced shifts in UV-visible absorption bands of naphthyl-ester liquid crystals: a comparative theoretical approach

The substituent- and solvent-induced shifts in UV-visible absorption bands of naphthyl-ester nematic liquid crystals, viz., 4-octylphenyl-6-octyloxy-2-naphthoate (NAPHE1) and 6-octyloxy-2-naphthylyl-4-octyloxybenzoate (NAPHE2), have been investigated using the DFT, CNDO/S and INDO/S methods. A correlation has been made between molecular charge distribution and phase stability based on Mulliken, Loewdin, AM1, PM3, MNDO, CNDO/S and INDO/S methods. The observed π→π* and n→π* electronic transitions have been reported. The substituent- and solvent-induced shifts in absorption bands, transition energies and energy gaps have been discussed. The photosensitivity of the molecules has been analysed based on these shifts. It has been observed that the substituent has a dominant role on both absorption maxima and energy band gap, whereas the solvent has a dominant role only on absorption maxima, and no effect has been observed on the energy gap. These shifts may provide beneficial consequences in determining the end use of compounds.     

再谈Minc-Sathre不等式的上下界

用调和平均值、均值不等式之间的关系及对数平均不等式,对Minc-Sathre不等式的上下界进行改进,使结论更精确.     

Factorization method and new potentials from the inverted oscillator

In this article we will apply the first- and second-order supersymmetric quantum mechanics to obtain new exactly-solvable real potentials departing from the inverted oscillator potential. This system has some special properties; in particular, only very specific second-order transformations produce non-singular real potentials. It will be shown that these transformations turn out to be the so-called complex ones. Moreover, we will study the factorization method applied to the inverted oscillator and the algebraic structure of the new Hamiltonians.     

Harmonic and attosecond pulse enhancement in the presence of noise

<正>In this paper,we theoretically investigate the effect of noise on the photoionization,the generation of the high-order harmonic and the attosecond pulse irradiated from a model He~+ ion.It shows that by properly adding noise fields,such as Gaussian white noise,random light or colored noise,both the ionization probabilities(IPs) and the harmonic yields can be enhanced by several orders of magnitude.Further,by tuning the noise intensity,a stochastic resonance-like curve is observed,showing the existence of an optimal noise in the ionization enhancement process.Finally,by superposing a properly selected harmonic,an intense attosecond pulse with a duration of 67 as is directly generated.     

The extended Hulburt–Hirschfelder‐long‐range oscillator model for direct‐potential‐fit analysis

In the present work, an extended Hulburt–Hirschfelder oscillator model is proposed as a means of simplifying potential energy functions for direct‐potential‐fit analyses. The new potential energy function is joined smoothly to the long‐range inverse‐power dispersion energy expression. The new model is employed in direct‐potential‐fits using spectroscopic line positions that involve the ground electronic states of the principal isotopologues of hydrogen iodide and carbon monoxide, and the ground and first singlet‐sigma excited states of hydrogen fluoride and hydrogen chloride. The present methodology is found to lead to compact, flexible, and robust representations for the potential energy that compare favorably with the results of past work where more complicated models were employed.     

Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation

In this paper, we investigate the performance of ring oscillators composed of gate-all-around (GAA) silicon nanowire (NW) field-effect transistors (FETs) with four different numbers of NW channels, for sub-10-nm logic applications. Our simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (f_osc), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, our work shows that the f_osc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (∼0.1 fF). Thus, our study provides an insight for determining the capacitive load and optimal number of NW channels, for device development and circuit design of GAA NW FETs.     

Interbasis expansions for isotropic harmonic oscillator

The exact solutions of the isotropic harmonic oscillator are reviewed in Cartesian, cylindrical polar and spherical coordinates. The problem of interbasis expansions of the eigenfunctions is solved completely. The explicit expansion coefficients of the basis for given coordinates in terms of other two coordinates are presented for lower excited states. Such a property is occurred only for those degenerated states for given principal quantum number n.     

变形谐振子势的能谱方程

讨论了3种变形谐振子势:左右两边不同参数的谐振子势、左边方形势加右边谐振子势和谐振子势中间加δ势中的能量本征态函数.这些函数都可以由厄米函数表示.由波函数及其一次导数在原点的衔接条件,得到了能谱方程.