Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride (HfSiON) on ultrathin SiO₂ buffer layer. The gate dielectric with 10? (1?= 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000℃, excellent interface properties, high dielectric constant (k=14) and low gate-leakage current (I_g=1.9×10^-3A/cm² @V_g=V_fb-1V for EOT of 10?). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.     

An oxide filled extended trench gate super junction MOSFET structure

This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.     

An Efficient and Economic Scheme for Remotely Preparing a Multi-Qudit State via a Single Entangled Qudit Pair

We propose some schemes for remote preparation of arbitraryhigh-dimensional equatorial entangled state via a single bipartitehigh-dimensional entangled state as quantum channel. We firstlypresent the remote preparation of bipartite three- and d-dimensionalequatorial entangled state by using a single entangled qutrit andqudit pair, respectively, and then directly generalize the schemesto multipartite case. The cases of the quantum channel beingnon-maximally two-qutrit and two-qudit entangled state are alsoconsidered, respectively. In these schemes the required resourcesare single-particle projective measurement, appropriate localunitary operation, auxiliary particle, and high-dimensional C-NOToperation. It is shown that the entanglement resource and classicalcommunication cost are both greatly reduced in our schemes.     

Unconventional geometric logic gate in a strong-driving-assisted multi-mode cavity

<正>We propose a scheme to implement an unconventional geometric logic gate separately in a two-mode cavity and a multi-mode cavity assisted by a strong classical driving field.The effect of the cavity decay is included in the investigation.The numerical calculation is carried out,and the result shows that our scheme is more tolerant to cavity decay than the previous one because the time consumed for finishing the logic gate is doubly reduced.     

Scheme for Implementing Quantum Search Algorithm in a Cluster State Quantum Computer

Using cluster state and single qubit measurement one can perform the one-way quantum computation. Here we give a detailed scheme for realizing a modified Grover search algorithm using measurements on cluster state. We give the measurement pattern for the cluster-state realization of the algorithm and estimated the number of measurement needed for its implementation. It is found that O（2^3n/^2n^2） number of single qubit measurements is required for its realization in a cluster-state quantum computer.     

Implementation of a Controlled-Phase Gate and Deutsch-Jozsa Algorithm with Superconducting Charge Qubits in a Cavity

Based on superconducting quantum interference devices （SQUIDs） coupled to a cavity, we propose a scheme for implementing a quantum controlled-phase gate （QPG） and Deutsch-Jozsa （D J） algorithm by a controllable interaction. In the present scheme, the SQUID works in the charge regime, and the cavity field is ultilized as quantum data-bus, which is sequentially coupled to only one qubit at a time. The interaction between the selected qubit and the data bus, such as resonant and dispersive interaction, can be realized by turning the gate capacitance of each SQUID. Especially, the bus is not excited and thus the cavity decay is suppressed during the implementation of DJ algorithm. For the QPG operation, the mode of the bus is unchanged in the end of the operation, although its mode is really excited during the operations. Finally, for typical experiment data, we analyze simply the experimental feasibility of the proposed scheme. Based on the simple operation, our scheme may be realized in this solid-state system, and our idea may be realized in other systems.     

Creating unconventional geometric phase gate using squeeze-like operator assisted by strong driving field

Based on the idea that a squeezing process can be thought of as a total cumulative effect of a large number of tiny squeezing processes, we define a squeeze-like operator with a time-dependent squeeze parameter. Applying this operator to and combining with a system which includes a two-photon interaction between two atoms and an initial vacuum cavity field, and resorting to a resonant strong driving classical field, we obtain an unconventional geometric phase gate with a shorter gating time.     

A Scheme of Conditional Quantum Phase Gate for Dissipative Cavity QED System

We propose a scheme to implement a two-qubit conditional quantum phase gate via a single mode cavity and a cascade four-level atom assisted by a classical laser. The quantum information is encoded.on the Flock states of the cavity mode and the two metastable ground states of the atom. Even under the condition of systematic dissipations, this scheme can also be realized with fidelity of 98.6% and success probability of 0.767.     

铁电共聚物P(VDF-TrFE)介电特性研究

利用最小二乘法,对辐照改性后P(VDF-TrFE)薄膜试样的介电常数谱进行v-F关系模拟,得出该材料具有与自旋玻璃体系及弛豫铁电体类似的性质．同时研究了其冻结温度随加工和辐照条件变化的规律．研究结果表明,通过适当选择加工和辐照条件,可以满足不同应用对铁电共聚物的要求．     

Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide

In this work,we investigate the back-gate I-V characteristics for two kinds of NMOSFET/SIMOX transistors with H gate structure fabricated on two different SOI wafers.A transistors are made on the wafer implanted with Si+ and then annealed in N2,and B transistors are made on the wafer without implantation and annealing.It is demonstrated experimentally that A transistors have much less back-gate threshold voltage shift AVth than B transistors under X-ray total dose irradiation.Subthreshold charge separation technique is employed to estimate the build-up of oxide charge and interface traps during irradiation,showing that the reduced △Vth for A transistors is mainly due to its less build-up of oxide charge than B transistors.Photoluminescence (PL) research indicates that Si implantation results in the formation of silicon nanocrystalline (nanocluster) whose size increases with the implant dose.This structure can trap electrons to compensate the positive charge build-up in the buried oxide during irradiation,and thus reduce the threshold voltage negative shift.