Visual Detection of Triethylamine and a Dual Input/Output Logic Gate Based on a Eu3+-Complex

A series of Ln³⁺-metal centered complexes, Ln(TTA)₃(DPPI) (Ln = La, 1; Ln = Eu, 2; Ln = Tb, 3; or Ln = Gd, 4) [(DPPI = N-(4-(1H-imidazo [4,5-f][1,10]phenanthrolin-2-yl)phenyl)-N-phenylbenzenamine) and (TTA = 2-Thenoyltrifluoroacetone)] have been synthesized and characterized. Among which, the Eu³⁺-complex shows efficient purity red luminescence in dimethylsulfoxide (DMSO) solution, with a Commission International De L’ Eclairage (CIE) coordinate at x = 0.638, y = 0.323 and Φ_Eu^L = 38.9%. Interestingly, increasing the amounts of triethylamine (TEA) in the solution regulates the energy transfer between the ligand and the Eu³⁺-metal center, which further leads to the luminescence color changing from red to white, and then bluish-green depending on the different excitation wavelengths. Based on this, we have designed the IMPLICATION logic gate for TEA recognition by applying the amounts of TEA and the excitation wavelengths as the dual input signal, which makes this Eu³⁺-complex a promising candidate for TEA-sensing optical sensors.     

使用焦散线法与光弹法测定三维裂纹混合型应力强度因子

本文介绍了将焦散线法与应力冻结，“解冻”技术相结合，使焦散线法用于测量三维体内部裂纹前缘应力强度因子的实验方法，并针对复杂应力状态下三维裂纹前缘的不同应变奇异场，合理地综合运用焦散线法与三维光弹法，实际测量与分离了三维裂纹前缘混合型应力强度因子。     

Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT) is compared with that of conventional high electron mobility transistor(HEMT) under direct current(DC) stress,and the degradation mechanism is studied. Under the channel hot electron injection stress, the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer, and that under the gate dielectric of the device. The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress, which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel. However, because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel, the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT. The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.     

Freezing around a finite heat sink immersed in an infinite phase change medium

Freezing around a spherical heat sink immersed in an infinite phase change medium — a free boundary problem involving growth and decay of the free boundary — is analysed here. A one-dimensional conduction model is formulated and the resulting partial differential equations are solved by finite difference methods. The energy discharged from the phase change medium during the heat transfer process is analysed for latent heat thermal energy storage applications. Results are presented for a wide range of parameters that are encountered in energy storage devices. The cases of slab/cylindrical heat sink are reexamined for a range of parameters not covered by the earlier investigators     

Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

The various advantages of extended-source(ES), broken gate(BG), and hetero-gate-dielectric(HGD) technology are blended together for the proposed tunnel field-effect transistor(ESBG TFET) in order to enhance the direct-current and analog/radio-frequency performance. The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction, and then, the on-state current for the ESBG TFET increases. The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail. The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 1013, large transconductance of 1200 μS/μm, high cut-off frequency of 72.8 GHz, and high gain bandwidth product of 14.3 GHz. Apart from these parameters, the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second-and third-order voltage intercept points, the third-order input interception point, and the third-order intermodulation distortion. Therefore, the ESBG TFET greatly promotes the application potential of conventional TFETs.     

Pressure growth dynamics during freezing of a closed volume of water with dissolved gases

A model for the freezing of a closed volume of water with dissolved gases is proposed and studied numerically. It is shown that gas release during ice formation leads to a considerable time delay in the time of a sudden pressure increase. In the freezing process, the pressure depends not only on the volume of ice formed but also on the freezing rate, which is determined by the cooling rate and the geometry and dimensions of the freezing volume. __________ Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 47, No. 6, pp. 85–92, November–December, 2006.     

A stochastic model for the permeability characteristics of saturated cemented porous media undergoing freezing

As the temperature of a saturated porous medium drops, the water in the pores starts to freeze. Since the temperature at which the phase change takes place is dependent on the pore size, the permeability of the medium changes continuously. Simultaneously, due to the expansion of water on freezing, it is forced to migrate through the pore body thus inducing stresses in material matrix. The stresses developed and the consequent frost damage are therefore dependent on the change in the permeability characteristics of the medium on freezing. This paper deals with the numerical prediction of permeability characteristics of porous cemented media saturated with water undergoing progressive freezing.A bond percolation model is used to generate the pore structure according to an assumed poresize distribution. Permeability of the medium at various temperatures is computed by solving the network problem. The computed results are compared with other analytical and experimental results. The proposed model predicts a threshold temperature below which permeability drops to zero. This phenomenon is crucial in developing a deeper understanding of the mechanism of frost damage to cemented porous materials such as bricks, stone, concrete, etc.     

Influence of Freezing and Different Drying Methods on Volatile Profiles of Strawberry and Analysis of Volatile Compounds of Strawberry Commercial Jams

Strawberry is the most consumed berry fruit worldwide due to its unique aroma and flavor. Drying fruits to produce a powder represents one of the possible conservation methods to extend their shelf-life. The aim of the present study was to compare the influence of freezing and different drying methods on the volatile profile of strawberry using the HS-SPME/GC–MS method, in addition to analysis of strawberry jam volatiles. A total of 165 compounds were identified, accounting for 85.03–96.88% of the total volatile compositions. Results and PCA showed that freezing and each drying process affected the volatile profile in a different way, and the most remarkable representative differential volatiles were ethyl hexanoate, hexyl acetate, (E)-2-hexenyl acetate, mesifurane, (E)-nerolidol, γ-decalactone, 1-hexanol, and acetoin. Shade air-dried, frozen, freeze-dried, and oven-dried 45 °C samples retained more of the fruity and sweet aromas of strawberry, representing more than 68% of the total aroma intensity according to the literature. In contrast, the microwave-drying method showed drastic loss of fruity esters. Strawberry jams demonstrated complete destruction of esters and alcohols in most jams, while terpenes were significantly increased. These findings help better understand the aroma of strawberry and provide a guide for the effects of drying, freezing, and jam processing.     

AlGaAs/InGaAs PHEMT栅电流参数退化模型研究

为定量研究在PHEMT栅电流退化过程中, 不同失效机理对应的参数退化时间常数及退化比例, 本文基于退化过程中物理化学反应中反应量浓度与反应速率的关系, 建立了PHEMT栅电流参数退化模型. 利用在线实验的方法获得PHEMT电学参数的退化规律, 分析参数随时间的退化规律, 得到不同时间段内影响栅电流退化的失效机理, 并基于栅电流参数退化模型, 得到了不同的失效机理对应的参数退化时间常数及退化比例. 关键词： PHEMT 栅电流 肖特基接触 退化模型     

Deterministic CNOT gate and entanglement swapping for photonic qubits using a quantum-dot spin in a double-sided optical microcavity

Abstract We propose a deterministic and scalable scheme to construct a two-qubit controlled-NOT (CNOT) gate and realize entanglement swapping between photonic qubits using a quantum-dot (QD) spin in a double-sided optical microcavity. The scheme is based on spin selective photon reflection from the cavity and can be achieved in a nondestructive and heralded way. We assess the feasibility of the scheme and show that the scheme can work in both the weak coupling and the strong coupling regimes. The scheme opens promising perspectives for long-distance photonic quantum communication and distributed quantum information processing.