柔性ITO衬底电化学沉积制备Cu/Cu2O薄膜

研究了使用电化学沉积法于碱性条件下在柔性ITO衬底上制备Cu/Cu₂O薄膜的方法。循环伏安曲线表明Cu₂O与Cu的阴极峰分别位于-500 mV(vs Ag/AgCl)和-800 mV(vs Ag/AgCl)附近。利用循环伏安法考察了生长温度和电解液pH值等对Cu₂O与Cu阴极峰电位的影响,阴极峰随生长温度的升高以及pH值的降低而略向阳极移动,沉积电流也随之相应增大。与弱酸性条件相比,上述两个阴极峰随pH值升高而移动的程度明显减小,这可能与碱性条件下C₃H₆O电离程度增大以及C₃H₆O根作为配体的过量程度有关。通过X射线衍射光谱和扫描电子显微镜的表征证实,在所研究的生长温度区间和pH值内可利用电化学沉积法在柔性ITO衬底上制备Cu/Cu₂O纳米混晶薄膜。在相同的生长温度和pH条件下,电化学沉积电位对样品表面形貌和晶体性质具有较大影响。     

单分子器件与电极间耦合界面对电子传输的影响

利用自恰tight-binding 理论，对由phenalenyl分子构成的全对称三电极纳米单分子器件的电子传导特性进行了理论研究. 通过改变电极与分子界面上的耦合，得出了分子与原子线电极间耦合强度变化对电子传输的影响. 结果显示电子通过phenalenyl分子器件的概率随着分子与电极的耦合强度变弱而减小. 当耦合强度变大时，不仅电子通过phenalenyl分子器件的概率变大，而且在较宽的能带内电子都可以通过phenalenyl分子. 所得结果还揭示出在特定的能区，对称三电极phenalenyl分子可以构成一个无源正负能量开关器件的新特性.     

Annealing effect on performance and morphology of photovoltaic devices based on poly(3‐hexylthiophene)‐b‐poly(ethylene oxide)

Novel block copolymers, poly(3‐hexylthiophene)‐b‐poly(ethylene oxide) (P3HT‐b‐PEO) were synthesized via Suzuki coupling reaction of P3HT and PEO homopolymers. The copolymers were characterized by NMR, gel permeation chromatography, differential scanning calorimeter, and UV–vis measurements. A series of devices based on the block copolymers with a fullerene derivative were evaluated after thermal or solvent annealing. The device using P3HT‐b‐PEO showed higher efficiency than using P3HT blend after thermal annealing. Phase‐separated structures in the thin films of block copolymer blends were investigated by atomic force microscopy to clarify the relationship between morphologies constructed by annealing and the device performance. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors

Inkjet‐printed high speed polymeric complementary circuits are fabricated using an n‐type ([poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐dithiophene)} [P(NDI2OD‐T2), Polyera ActivInk N2200] and two p‐type polymers [poly(3‐hexylthiophene) (P3HT) and a dithiophene‐based polymer (Polyera ActivInk P2100)]. The top‐gate/bottom‐contact (TG/BC) organic field‐effect transistors (OFETs) exhibit well‐balanced and very‐high hole and electron mobilities (μ_FET) of 0.2–0.5 cm²/Vs, which were enabled by optimization of the inkjet‐printed active features, small contact resistance both of electron and hole injections, and effective control over gate dielectrics and its orthogonal solvent effect (selection of poly(methyl methacrylate) and 2‐ethoxyethanol). Our first demonstrated inkjet‐printed polymeric complementary devices have been integrated to high‐performance complementary inverters (gain >30) and ring oscillators (oscillation frequency ～50 kHz). We believe that the operating frequency of printable organic circuits can be further improved more than 10 MHz by fine‐tuning of the device architecture and optimization of the p‐ and n‐channel semiconductor processing. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2010     

Substrates for flexible electronics: A practical investigation on the electrical,film flexibility,optical, temperature,and solvent resistance properties

Designing and developing flexible electronics requires a thorough investigation of the substrates available for the fabrication of devices. Here, we present a practical study on a variety of significant substrates: polyethylene terephthalate (PET), its heat‐stabilized (HS) derivative, HS‐PET, and polyethylene naphthalate (PEN) plastic insulating films; indium tin oxide (ITO)‐coated ITO/PEN and ITO/PET transparent conducting films; rigid ITO/glass and FTO/glass substrates; stainless steel and titanium foils. We put the substrates through a range of tests these actually undergo during device fabrication to determine their optical, mechanical flexibility (under different types of tensile and compressive stress bending with and without a PEDOT:PSS conducting polymer layer), solvent resistance, stability to temperature treatment (conductivity and deformation), and to UV irradiation. We highlight issues and propose solutions to improve substrate response. The results and thresholds extracted reveal limitations and windows of opportunity useful for the designer of flexible optoelectronics in determining manufacturing processes and the final applications under everyday operation. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011     

Organic light‐emitting device dark spot growth behavior analysis by diffusion reaction theory

Dark spot growth rate tracing experiments performed on an organic light‐emitting device show that moisture entering into the device is relatively properly fitted by Fick's diffusion equation in the substrate/indium tin oxide (ITO)/hole transport layer (HTL)/silver (Ag) structure. It is believed that the moisture is dissolved into the polymer layer, which results in a decrease in the diffusion coefficient in the device with the substrate/ITO/HTL/electroluminescent (EL) polymer/Ag structure. The diffusion and chemical reaction occurring in the cathode layer further decreases the diffusion coefficient in the device with the substrate/ITO/HTL/EL polymer/calcium/Ag structure. Useful parameters, such as diffusion and solubility constants, describing possible mechanisms happening during dark spot growth on organic light‐emitting diode devices are extracted. © 2001 John Wiley & Sons, Inc. J Polym Sci Part B: Polym Phys 39: 1697–1703, 2001     

The Chemistry of Cyborgs—Interfacing Technical Devices with Organisms

The term “cyborg” refers to a cybernetic organism, which characterizes the chimera of a living organism and a machine. Owing to the widespread application of intracorporeal medical devices, cyborgs are no longer exclusively a subject of science fiction novels, but technically they already exist in our society. In this review, we briefly summarize the development of modern prosthetics and the evolution of brain–machine interfaces, and discuss the latest technical developments of implantable devices, in particular, biocompatible integrated electronics and microfluidics used for communication and control of living organisms. Recent examples of animal cyborgs and their relevance to fundamental and applied biomedical research and bioethics in this novel and exciting field at the crossroads of chemistry, biomedicine, and the engineering sciences are presented.     

Processing optimization: A way to improve the ionic conductivity and dielectric loss of electroactive polymers

Electro‐active polymers (EAPs) such as P(VDF‐TrFE‐CTFE) are greatly promising in the field of flexible sensors and actuators, but their low dielectric strength driven by ionic conductivity is a main concern for achieving high electrostrictive performance. It is well known that there is a quadratic dependence of the strain response and mechanical energy density on the applied electric field. This dependence highlights the importance of improving the electrical breakdown EAPs while reducing the dielectric losses. This article demonstrates that it is possible to dramatically increase the electrical breakdown and decrease the dielectric losses by controlling processing parameters of the polymer synthesis and fabrication procedure. As a result, an enhancement of around 70% is achieved in both the strain and blocking force. The effects on the dielectric losses of the polymer crystallinity, molecular weight, solvent purity, and crystallization temperature are also investigated. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 1164–1173     

Selective area rare-earth doping of planar glass samples for monolithic integration of optically passive and active waveguides

Successful demonstration of selective area doping of planar glass samples for monolithic integration of optically passive and active devices on a single chip is presented. Salt solution of erbium was delivered onto pre-sintered germano-silicate samples via a syringe. The samples were then consolidated to form dense glass layers containing regions doped with rare earth. Erbium tri-chloride solution, 0.1 M, was used during the solution doping phase, with the resulting erbium atomic percentage ranging from more than 0.1-0.4%, increasing linearly with the number of drips applied.