Sb2O3的丰度对（1-x）La0.6Dy0.1Sr0.3MnO3/（x/2）（Sb2O3）电输运性质的影响

用固相反应法制备(1-x)La0.6Dy0.1Sr0.3MnO3/x/2(Sb2O3)(x=0.00,0.02,0.15)样品,通过X射线衍射(XRD)图谱,扫描电子显微镜(SEM)照片及SEM能谱(EDS),ρ～T曲线研究样品的结构及电输运性质.结果表明:Sb离子没有进入Mn位,Sb2O3包覆在La0.6Dy0.1Sr0.3MnO3颗粒表面,Sb2O3起助熔剂作用,使得复合样品的颗粒变大且大小相对均匀;复合样品的绝缘体-金属转变温度TP较纯的La0.6Dy0.1Sr0.3MnO3的TP提高20K左右,对x=0.15的样品电阻高峰值比纯的La0.6Dy0.1Sr0.3MnO3的峰值电阻率增大两个数量级,用自旋极化隧穿理论予以解释.     

一种局部相含率测量方法

在局部电导探针和单丝电容探针的基础上,提出一种新型局部电容探针,用于测量两相流的局部相含率。静态研究表明,局部电容探针能够测量空气水两相流的局部相含率,测量结果不受导电相电导率变化的影响。从工业蒸馏水变化到饱和食盐水(NaCl的质量分数0～5%),局部电容探针输出结果没有明显变化。电极距离在0～30 mm的范围内变化,测量结果变化小于1%。动态实验表明,局部电容探针测量的两相流的局部相含率,能够很好反映流动过程(以弹状流为例),和实验观察结果完全一致。只需要设置简单的阈值大小,就可以得到相含率的大小。     

Electrical Properties of an m × n Hammock Network

Electrical property is an important problem in the field of natural science and physics, which usually involves potential, current and resistance in the electric circuit. We investigate the electrical properties of an arbitrary hammock network, which has not been resolved before, and propose the exact potential formula of an arbitrary m × n hammock network by means of the Recursion-Transform method with current parameters(RT-I) pioneered by one of us [Z. Z. Tan, Phys. Rev. E 91(2015) 052122], and the branch currents and equivalent resistance of the network are derived naturally. Our key technique is to setting up matrix equations and making matrix transformation, the potential formula derived is a meaningful discovery, which deduces many novel applications. The discovery of potential formula of the hammock network provides new theoretical tools and techniques for related scientific research.     

Surface structure of low-coveraged Cs on Si(0 0 1)-() system

Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(0 0 1) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(0 0 1)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(0 0 1)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(0 0 1) surface. It is also found that Cs atoms adsorbed on Si(0 0 1) surface with a height of 2.83±0.05 Å from the second layer of Si(0 0 1) surface.     

Study of phase transition in a [CdHgI4 : 0.2AgI] mixed conducting composite system doped with KI and K2SO4

New composite superionic systems, [CdHgI₄?:?0.2AgI]?:?0.xKI and [CdHgI₄?:?0.2AgI]?:?0.xK₂SO₄ (x?=?0.2, 0.4, 0.6?mol. wt%), were prepared, using [CdHgI₄?:?0.2AgI] mixed composite system as the host. Electrical conductivity was measured to study the transition behavior at frequencies of 100?Hz, 120?Hz, 1?kHz, and 10?kHz in the temperature range from 150°C to 250°C using a GENRAD 1659 RLC Digibridge. A sharp increase in conductivity was observed during β?→?α phase transition. Upon increasing the dopant-to-host ratio, the conductivity of the superionic systems exhibited Arrhenius (thermally activated)-type behavior. Differential thermal analysis, differential scanning calorimetry, thermogravimetric analysis, and X-ray powder diffraction were performed to confirm the doping effect and transition in the host. The phase transition temperature increased with an increase in the dopant concentration. Activation energies in eV for pre- and post-transition phase behavior are reported.     

Study of electronic and optical properties of pure and metal decorated boron nitride nanoribbons (B15N14H14-X): first principle calculations

Density functional theory (DFT)/time dependent density functional theory (TDDFT) based calculations were performed for basis sets 6-31G for DFT and 6-31G (d), 6-31G (d,p) and 6-31+G (d,p) for TDDFT calculations on pure boron nitride nanoribbon (BNNR) B₁₅N₁₅H₁₄ and metal decorated B₁₅N₁₄H₁₄-X BNNRs, where X = Ni⁺, Fe⁺, Co, Cr⁺, Cu and Al. The metal doping ratio = 3.45% and the doping site (nitrogen atom), were fixed for all the BNNRs. Electronic properties dipole moment, binding energy and bandgap were determined. Absorption properties in the wavelength range (100–600 nm) were studied, and optical gaps, absorption wavelengths, oscillator strengths and dominant transitions were calculated. The effect of metal doping on the electronic and optical properties was investigated. Single metal doping shifts the electronic gap of pure BNNR from insulating to semiconducting nature. Red shift in the absorption wavelengths from ultraviolet to visible in all the BNNRs was noticed.     

Atomic structure of the Si(5 5 12)-2 × 1 surface

Based on the results of scanning tunneling microscopy studies of the reconstructed Si(5 5 12)-2 × 1 surface, its atomic structure has been found. It turns out that Si(5 5 12)-2 × 1 consists of four one-dimensional structures: honeycomb (H) chain, π-bonded H′ (π) chain, dimer-adatom (D/A) row, and tetramer (T) row. Its period is composed of three subunits, i.e., (i) (3 3 7) unit with a D/A row [D(3 3 7)], (ii) (3 3 7) unit with a T row [T(3 3 7)], and (iii) (2 2 5) unit with both a D/A and a T row. Two kinds of adjacent subunits, T(3 3 7)/D(3 3 7) and D(3 3 7)/(2 2 5), are divided by H chains with 2× periodicity due to buckling, while one kind of adjacent subunits, T(3 3 7)/(2 2 5), is divided by a π chain with 1× periodicity. Two chain structures, H and π chains, commute with each other depending upon the external stresses perpendicular to the chain, which is the same for two row structures, D/A and T rows. It can be concluded that the wide and planar reconstruction of Si(5 5 12)-2 × 1 is originates from the stress balance among two commutable chains and two commutable rows.     

发光二极管放电实验现象分析

利用直流电源对发光二极管(LED)的结电容充电,切断直流电源后对LED的电压-时间特性进行测量。当充电电压低于LED复合发光的门槛电压,LED的电压-时间特性与普通二极管的相似。当充电电压高于LED复合发光的门槛电压,首次观察到:开始放电的瞬间会出现一个快速下降过程,快速下降到门槛电压以下;LED上的电压越高,快速下降到的电压越低。对该现象进行分析,得到一些新的结论。当LED的正偏电压高于复合发光的门槛电压后,出现了注入到扩散区的非平衡载流子随正偏电压的提高而减小的现象,即dQ/du<0。     

Superconductivity in Sr<Subscript>0.75</Subscript>Y<Subscript>0.75</Subscript>Ba<Subscript>1.5</Subscript>Cu<Subscript>3</Subscript> O<Subscript>7−<Emphasis Type="Italic">d</Emphasis></Subscript> compounds

The effect of simultaneous Sr substitution at the Ba and Y sites has been studied in the Sr_0.75Y_0.75Ba_1.5Cu₃O_7–dsystem. Attempts to replace 25% Y and 25% Ba have been successful and superconductivity was observed above 78 K for Sr_0.75Y_0.75Ba_1.5Cu₃O_7–d compound with high oxygen content, i.e., O_6.76, and having orthorhombic crystal symmetry. The compound was treated in argon gas at 800°C to reduce the oxygen content and to induce some structural changes. The Sr_0.75Y_0.75Ba_1.5Cu₃O_6.1 compound thus obtained has tetragonal symmetry and low oxygen content, O_6.1. It has also shown superconductivity at 28 K. The paper presents a careful comparison of the structural and electrical properties and infrared absorbance spectra of the two compounds with the same metallic composition, Sr_0.75Y_0.75Ba_1.5Cu₃, but with different oxygen content and crystal symmetry. The study clearly establishes the occurrence of superconductivity in tetragonal Sr-substituted (both at Y and Ba sites in) YBCO.