Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

金刚石对顶砧原位电导率测量系统

 在金刚石对顶砧中进行原位高温高压电阻测量时,由于受到绝热层的限制,从而达不到理想的温度条件。采用普通的粉末绝热材料,会给电极的引入造成很大困难,而且不规则的电阻丝使电阻测量很难精确量化。利用溅射镀膜方法,在对顶砧的砧面上镀氧化铝膜作绝热层,溅射的金属钼膜作电极材料,成功地完成了高温高压条件下原位电阻的测量。利用此装置,测量了铁镁硅酸盐(Mg_0.875,Fe_0.125)₂SiO₄在高温高压环境下（31~35 GPa,1 500~3 400 K）的电导率,得到了样品的导电粒子激活能,发现其激活能随着压强的升高而增大,与低压低温（小于15 GPa,低于1 200 K）条件相比,其激活体积和激活能都明显减小。     

基于白光干涉彩色图像的微结构表面形貌测量

微结构的表面形貌会显著地影响微纳器件的使用性能及产品质量,是微纳测试领域的一个重要研究方面,利用白光干涉技术是测量物体表面形貌的一种常见方法。区别于常用的CCD黑白相机,使用CCD彩色相机采集白光干涉条纹的彩色图像,使获取的图像包含了R、G、B三个通道的信息。利用小波变换法分别求解出在不同扫描位置处R、G、B通道的相位信息,通过建立的评价函数,并结合最小二乘法可精确确定零光程差的位置,利用相对高度和零光程差位置的线性关系,进而得到物体的表面形貌。通过仿真以及实际测量由VLSI标准公司制造的标准台阶结构,验证了所提出方法的有效性。     

Aggregation of clay platelets in nematic liquid crystal, 5CB: microstructure,electrical conductivity and rheological investigations

The microstructure, electrical conductivity and rheological properties of a nematic liquid crystal (5CB) doped at concentrations up to 4.5 wt% of montmorillonite (MMT) or organomontmorillonite (OMMT) clay nanoplatelets, were investigated at temperatures between 293 and 310 K. Microscopy and electrical conductivity assessment revealed noticeable differences in aggregation in MMT and OMMT suspensions, MMT nanoplatelets showing a strong tendency to aggregation. The incubation of 5CB in the presence of MMT initially produced loose aggregation, followed by the formation of compact aggregates. The latter had practically no influence on the surrounding inter-aggregate regions. In the case of OMMT, a greater degree of integration of the nanoplatelets was observed within the liquid crystal structure of 5CB, resulting in a noticeable effect on electrical conductivity and activation energy of the composite material. Thixotropy was observed in suspensions of 5CB composites formed with either MMT or OMMT. A composite of 5CB with OMMT also exhibited anomalous viscous thinning at shear rates below 100 s^?1. A structural model is suggested to explain this behaviour.     

Preparation of modified polymer blend and electrical performance

In this study, a modified binary polymer blend made up of polycarbonate and polystyrene blend has been prepared by loading of aluminum oxide (Al₂O₃) as a dopant. The role of alumina with polymer blend system was addressed in view of interfacing criteria. The filler concentration of modified blend was taken as 5, 10, and 15%. The morphological, thermal, and electrical properties were characterized by various techniques. Optical microscopy confirms the homogenous dispersion of Al₂O₃ in blend. The presence of alumina was detected by subatomic level using atomic force microscope (both two and three dimensional approach). The differential scanning calorimetric thermographs demonstrate decreasing softing point as function of alumina loading. The dielectric properties such as dielectric constant, loss, and electrical modulus were studied under DC bias. The effect of DC bias exhibits significant changes at low amount of Al₂O₃. The dielectric polarization supports Maxwell Wagner (MW) theory due to low frequency response. 15% Al₂O₃ gives the highest dielectric constant (ε′) value (3.5?×?10⁵) at 10 Hz. The polymer modified blend with Al₂O₃ may be used as a one of the best dielectric medium.     

沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响

在室温下采用直流磁控溅射以SiO₂/Si为衬底制备了不同沟道层厚度的底栅式In₂O₃薄膜晶体管,讨论了沟道层厚度对底栅In₂O₃薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In₂O₃薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为10⁶,场效应迁移率为6.2 cm²·V^-1·s^-1。     

真空退火对L1_0-CoPt薄膜结构、磁性及表面形貌的影响

本文利用磁控溅射的方法制备了L1_0-CoPt薄膜,研究了不同退火条件对薄膜结构、磁性以及表面形貌的影响.通过优化退火温度、保温时间以及升温速率,制备出了具有大矫顽力、高矩形比、粗糙度小的垂直各向异性L1_0-CoPt薄膜.实验发现,较高的退火温度有利于克服CoPt薄膜有序化转变所需要的能量,同时适当延长退火时间可以提高CoPt薄膜的扩散系数,从而促使无序相fcc转化为L1_0有序相fct结构.此外,退火过程中减缓升温速率可以有效减小薄膜粗糙度,从而形成平整连续膜.     

Coral reef-like polyanaline nanotubes prepared by a reactive template of manganese oxide for supercapacitor electrode

Coral reef-like PANI nanotubes composed of nanopaticles were successfully synthesized by a reactive template of manganese oxide.The structure was characterized by using SEM,TEM,and FT-IR,and the supercapacitive behaviors of these nanotubes were investigated with cyclic voltammetry（CV）,and charge-discharge tests,respectively.A maximum specific capacitance of 533 F/g could be achieved in 1mol/L aqueous H₂SO₄ with the potential range of -0.2 to 0.8 V（vs.the saturated calomel electrode） in a half-cell setup configuration for PANI electrode,suggesting its potential application in the electrode material for electrochemical capacitors.     

缓变地形下Rossby波振幅演变满足的带有强迫项的KdV方程

运用非线性方法与摄动法,讨论了当地形随时间缓变时Rossby波振幅的演变问题.从均值流体准地转涡度方程推导,得到Rossby波振幅演变满足带有强迫项的KdV方程的结论,而地形随时间的缓慢变化诱导了该方程的强迫项. 关键词： 非线性Rossby波 带有强迫项的KdV方程 摄动法 缓变地形     

发展在XLPE电缆绝缘内外侧的电树枝

以XLPE高压电力电缆内外侧绝缘中的电树枝特性为研究对象，通过分析电树枝引发与生长的统计实验规律和采用扫描电子显微镜分析发现，由于不同结晶状态的影响，电缆绝缘内外侧的电树枝特性存在很大的差异.引发于绝缘内侧电树枝引发时间短、生长速度快、电树枝形状具有多样性；起始于绝缘外侧的电树枝不仅引发时间长、生长速度极慢，而且电树枝形状(结构)比较单一.并对这两个位置电树枝的引发和生长机理进行了探讨. 关键词： 电树枝 结晶状态 统计规律 内侧和外侧绝缘层