Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.     

线缆系统电磁脉冲效应测量系统研制和试验

分析了实验室瞬态X射线产生的系统电磁脉冲(SGEMP)效应测试所面临的技术问题,提出了解决方法、措施以及实验室模拟瞬态X射线的SGEMP模拟试验方法。通过电子屏蔽、电磁屏蔽、光电隔离、信号对称提取等特殊技术处理,解决了SGEMP效应模拟试验方法和测量系统抗X射线、抗电磁辐射等技术问题,并在大型瞬态X射线模拟源上,测出了瞬态X射线辐照时金属腔内线缆的SGEMP效应波形及幅值。     

Spin-polarized current and tunnel magnetoresistance in heterogeneous single-barrier magnetic tunnel junctions

Current in heterogeneous tunnel junctions is studied in the framework of the parabolic conduction-band model. The developed model of the electron tunneling takes explicitly into account the difference of effective masses between ferromagnetic and insulating layers and between conduction subbands. Calculations for Fe/MgO/Fe-like structures have shown the essential impact of effective mass differences in regions (constituents) of the structure on the tunnel magnetoresistance of the junction.     

Two-dimensional model of elastically coupled molecular motors

A flashing ratchet model of a two-headed molecular motor in a two-dimensional potential is proposed to simulate the hand-over-hand motion of kinesins.Extensive Langevin simulations of the model are performed.We discuss the dependences of motion and efficiency on the model parameters,including the external force and the temperature.A good qualitative agreement with the expected behavior is observed.     

Modelling of high-temperature dark current in multi-quantum well structures from MWIR to VLWIR

In this paper, a model to calculate the dark current of quantum well infrared photodetectors at high-temperature regime is presented. The model is derived from a positive-definite quantum probability-flux and considers thermionic emission and thermally-assisted tunnelling as mechanisms of dark current generation. Its main input data are the wave functions obtained by time-independent Schrodinger equation and it does not require empirical parameters related to the transport of carriers. By means of this model, the dark current of quantum well infrared photodetectors at high-temperature regime is investigated with respect to the temperature, the barrier width, the applied electric field and the position of the first excited state. The theoretical results are compared with experimental data obtained from lattice-matched InAlAs/InGaAs, InGaAsP/InP on InP substrate and AlGaAs/GaAs structures with rectangular wells and symmetric barriers, whose absorption peak wavelengths range from MWIR to VLWIR. The corresponding results are in a good agreement with experimental data at different temperatures and at a wide range of applied electric field.     

Printed Circuit Board-Based Electrolyte Regulator for Laminar Microfluidics

The trench on a printed circuit board was reconstructed to fabricate a microfluidic framework that allows low-cost production for small quantities and integration with multifunctional elements. An on-chip electrolyte regulator was thus proposed on this platform to analyze diffusion properties in laminar flow. A numerical model was developed, highlighting the interplay between the electrolyte migration and hydrodynamic properties. Solutions with dissolved sodium chloride were simulated and experimentally tested for the regulation of electrical conductivity under the guidance of the normalized Nernst-Planck equation. The diffusion mechanism and the resulting concentration field were demonstrated in detail. This approach provides a satisfactory manufacturing method and a useful tool for integrated microfluidic systems.     

Zr掺杂对MgB2超导微观结构和超导电性的影响

将Mg粉、Zr粉和B粉按比例混合获得Mg1-xZrxB2(x=5%10%和20%),压制成型后,在流通氩气的条件下于800℃烧结2h.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)分析烧结后样品的显微结构和化学组成,采用差热分析(DTA)观察Zr掺杂对MgB2分解温度的影响,并用物性测试仪(PPMS)测试样品的超...     

High-speed deposition of RE123 film with large current capacity by hot-wall type PLD system

We have studied a hot-wall heating system to produce GdBa₂Cu₃O_y (GdBCO) films with large critical currents (I_c) at a high production rate by a pulsed-laser-deposition (PLD) method. GdBCO films fabricated at a production rate of 30 m/h under the optimized conditions, especially a distance of 95 mm between the target and the substrate (T–S), exhibited high critical current densities (J_c) of about 3 MA/cm² and I_c over 300 A at a thickness of 1–2 μm. Furthermore, long GdBCO tapes prepared by repeated depositions at each tape-passing speed of 80 m/h showed uniform I_c distribution along the longitudinal direction, because the hot-wall system enabled to stabilize temperature within a few degrees at 800 °C. A 170 m long tape with I_c over 600 A was successfully fabricated at a production rate of 16 m/h using a laser power of 360 W.     

Spin-dependent transport in a nanopillar non-local spin valve

We investigate the injection of a pure spin current into a non-magnetic Cu wire in a lateral spin valve. We detect the spin accumulation occurring at the interfaces between the magnetic nanopillars and the non-magnetic wire in the non-local geometry. We confirm that the accumulated spins diffuse equally in the Cu wire irrespective of the presence of a charge current. The inversion of the injector and detector magnetic nanopillars does not affect the spin signal, in agreement with analytical predictions for this system.