Response to the Comment on ‘Conjectures on exact solution of three-dimensional (3D) simple orthorhombic Ising lattices’

The error of Equation (15b) in my article [Z.D. Zhang, Phil. Mag. 87 (2007) p.5309] in the application of the Jordan–Wigner transformation does not affect the validity of the putative exact solution, since the solution is not derived directly from that equation. Other objections of Perk's comment [J.H.H. Perk, Phil. Mag. 89 (2009) p.761] are the same as those in Wu et al.'s comments [F.Y. Wu et al., Phil. Mag. 88 (2008) p.3093; p.3103], which do not stand on solid ground and which I have sought to refute in my previous response [Z.D. Zhang, Phil. Mag. 88 (2008) p.3097]. The conjectured solution can be utilized to understand critical phenomena in various systems, whereas the conjectures are open to rigorous proof.     

Charge redistribution and a shortening of the Fe—As bond at the quantum critical point of SmO1–xFxFeAs

Many researchers have pointed out that there is a quantum critical point (QCP) in the F‐doped SmOFeAs system. In this paper, the electronic structure and local structure of the superconductive FeAs layer in SmO_1–xF_xFeAs as a function of the F‐doping concentration have been investigated using Fe and As K‐edge X‐ray absorption spectroscopy. Experiments performed on the X‐ray absorption near‐edge structure showed that in the vicinity of the QCP the intensity of the pre‐edge feature at the Fe‐edge decreases continuously, while there is a striking rise of the shoulder‐peak at the As edge, suggesting the occurrence of charge redistribution near the QCP. Further analysis on the As K‐edge extended X‐ray absorption fine structure demonstrated that the charge redistribution originates mostly from a shortening of the Fe—As bond at the QCP. An evident relationship between the mysterious QCP and the fundamental Fe—As bond was established, providing new insights on the interplay between QCP, charge dynamics and the local structural Fe—As bond in Fe‐based superconductors.     

费米气体在调制缺陷晶格中的超流特性

本文研究了费米气体在调制缺陷的一维环形光晶格中的超流特性．在流体动力学模型和两模近似下,整个系统的动力学性质可以等效为单摆模型的哈密顿量,从而得到系统发生超流相变的临界条件ρc ．系统在BEC-BCS整个渡越区中,临界原子数密度将使得系统存在缺陷导致阻尼的正常态之外的另一种状态,即平面波连续穿过缺陷的超流态．系统的超流特性依赖于缺陷的强度、类型以及原子间的相互作用,并且由于缺陷与原子间相互作用的耦合,系统在BCS端更容易维持超流态。     

Reversal current observed in micro-and submicro-channel flow under non-continuous DC electric field

In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the movement of single molecule within micro-/submicro-fluidic channels, the characteristics of current signals at the initial stage of the flow are systematically studied based on a three-electrode system. The current response of micro-/submicro-fluidic channels filled with different electrolyte solutions in non-continuous external electric field are investigated. It is found, there always exists a current reversal phenomenon, which is an inherent property of the current signals in micro/submicro-fluidics Each solution has an individual critical voltage under which the steady current value is equal to zero The interaction between the steady current and external applied voltage follows an exponential function. All these results can be attributed to the overpotentials of the electric double layer on the electrodes. These results are helpful for the design and fabrication of functional micro/nano-scale fluidic sensors and biochips.     

Computation of critical exponents for two-dimensional ising model on a cellular automaton

Static critical exponents for the two-dimensional Ising model are computed on a cellular automaton. The analysis of the data within the framework of the finite-size scaling theory reproduces their well-established values.     

Critical exponents of Manhattan Hamiltonian walks in two dimensions,from Potts andO(n) models

We consider a set of Hamiltonian circuits filling a Manhattan lattice, i.e., a square lattice with alternating traffic regulation. We show that the generating function (with fugacityz) of this set is identical to the critical partition function of aq-state Potts model on an unoriented square lattice withq ^1/2 =z. The set of critical exponents governing correlations of Hamiltonian circuits is derived using a Coulomb gas technique. These exponents are also found to be those of an O(n) vector model in the low-temperature phase withn =q ^1/2 =z. The critical exponents in the limitz = 0 are then those of spanning trees (q= 0) and of dense polymers (n=0,T < T_c), corresponding to a conformal theory with central chargeC = –2. This shows that the Manhattan orientation and the Hamiltonian constraint of filling all the lattice are irrelevant for the infrared critical properties of Hamiltonian walks.     

Melting of microinclusions close packed in an elastic matrix

A novel representation is proposed of the liquid state in a microcavity, the collective nature of that state being taken into account. In this case a microinclusion undergoing melting is described as a single two-level system. The phase transition of melting in a close-packed system of such inclusions embedded in an elastic medium is described rigorously within the framework of the self-consistent approach. When an additional intermediate premelting state is taken into account, the curve of the steady-state phase transition with a critical point that happens on the phase diagram can be transformed in different ways, depending on the values of the specific parameters. In the simplest case shortening of the straight line takes place; bending is also possible. There is a region of the parameters where the critical line is split. In the latter case the existence of the triple point is also possible. The results obtained are in agreement with the experimental data.     

Critical points in the Bragg glass phase of a weakly pinned crystal of Ca3Rh4Sn13

New experimental data are presented on the scan rate dependence of the magnetization hysteresis width ΔM(H) (∞ critical current densityJ _c(H)) in isothermalMH scans in a weakly pinned single crystal of Ca₃Rh₄Sn₁₃, which displays second magnetization peak (SMP) anomaly as distinct from the peak effect (PE). We observe an interesting modulation in the field dependence of a parameter which purports to measure the dynamical annealing of the disordered bundles of vortices injected through the sample edges towards the destined equilibrium vortex state at a givenH. These data, in conjunction with the earlier observations made while studying the thermomagnetic history dependence inJ _c(H) in the tracing of the minor hysteresis loops, imply that the partially disordered state heals towards the more ordered state between the peak field of the SMP anomaly and the onset field of the PE. The vortex phase diagram in the given crystal of Ca₃Rh₄Sn₁₃ has been updated in the context of the notion of the phase coexistence of the ordered and disordered regions between the onset field of the SMP anomaly and the spinodal line located just prior to the irreversibility line. A multi-critical point and a critical point in the (H,T) region of the Bragg glass phase have been marked in this phase diagram and the observed behavior is discussed in the light of recent data on multi-critical point in the vortex phase diagram in a single crystal of Nb.     

Edge misfit dislocation formation at the interface of a nanopore and infinite substrate with surface/interface effects

The model of an edge misfit dislocation at the interface of the hollow nanopore and the infinite substrate with surface/interface stress is investigated. Using the complex variable method, analytical solutions for complex potentials of a film due to an edge misfit dislocation located in the film with surface/interface effect are derived, and the stress fields of the film and the edge misfit dislocation formation energy can be obtained. The critical conditions for edge misfit dislocation formation are given at which the generation of an edge misfit dislocation is energetically favourable. The influence of the ratio of the shear modulus between the film and the infinite substrate, the misfit strain, the radius of the nanopore and the surface/interface stress on the critical thickness of the film is discussed.