掺杂对CH样品Rayleigh-Taylor不稳定性增长的影响

在神光II激光装置上进行了辐射驱动不同掺杂样品的单模Rayleigh-Taylor(RT)不稳定性实验.结果显示:与纯碳氢(CH)样品相比,掺Br的CH样品的扰动更早、更快地进入非线性区,产生二次谐波,并且掺Br比例越高,CH样品扰动进入非线性区的时间越早,相同时刻扰动的二次谐波的幅度越高.这是因为密度梯度效应抑制了二次谐波的产生,掺Br比例越高,密度梯度标长越小;同时密度梯度效应还抑制三次谐波对基模增长的负反馈,造成基模具有更大的线性增长,导致线性饱和幅值大于经典值0.1λ.     

Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity

A Van der Pauw Hall measurement is performed on the intended doped ZnO films （Na doped ZnO） grown by using the molecular beam epitaxial method. All as-grown samples show n-type conductivity, whereas the annealed samples （annealing temperature 900℃） show ambiguous carrier conductivity type （n- and p-type） in the automatic Van der Pauw Hall measurement. A similar result has been observed in Li doped ZnO and in as-doped ZnO films by other groups before. However, by tracing the Hall voltage in the Van der Pauw Hall measurement, it is found that this alternative appearance of both n- and p-type conductivity is not intrinsic behavior of the intended doped ZnO films, but is due to the persistent photoconductivity effect in ZnO. The persistent photoconductivity effect would strongly affect the accurate determination of the carrier conductivity type of a highly resistive intended doped ZnO sample.     

纳米Zn_2SiO_4∶Mn包覆SiO_2颗粒的制备及表征

采用水热合成方法添加KOH在SiO2颗粒表面包覆Mn2+掺杂纳米Zn2SiO4,通过X射线衍射(XRD)仪、扫描电子显微镜(SEM)、能谱、光致发光(PL)光谱仪对产物的晶体结构、形貌及光学性能进行表征,并对Zn2SiO4晶体在水热反应过程中的反应机制进行了讨论。XRD测试结果表明:220℃水热条件下,添加少量KOH,反应不同时间后,可在石英砂表面生成一层Zn2SiO4;SEM照片显示所生成的Zn2SiO4为六棱柱形,并且不同反应条件下Zn2SiO4的包覆程度不同。反应产物经光致发光性能研究表明:Mn2+掺杂纳米Zn2SiO4包覆SiO2样品中显示两套光致发光谱,一套为250nm左右激发产生的522nm绿色发光带,另一套为340～410nm宽带激发的440nm蓝色发光带,前者为典型的Mn2+离子发光,后者440nm发光带则有可能来源于基体SiO2的氧空位缺陷。     

Ga掺杂对ZnO纳米结构可见光发射的抑制效应

采用碳热还原反应和原位掺杂的方法制备了不同Ga掺杂浓度的ZnO纳米结构. X射线衍射 显示掺杂纳米结构中为单一的氧化锌纤锌矿结构. 扫描电子显微镜 观测发现随掺杂浓度的增大, 纳米结构的形貌逐渐从纳米六棱柱变为纳米锥.光致发光 和X射线光电子能谱 测量分别发现随着掺杂浓度升高, 纳米结构的可见发光强度和其中空位 氧峰相对强度逐渐减小直至消失, 两者存在很强的相关性. 上述结果为ZnO可见光发射的氧空位机理提供了新的实验证据. 对Ga掺杂抑制纳米结构中氧空位的原因进行了分析.     

Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO2 dilute magnetic semiconductors

According to density functional theory （DFT） using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy （Vo） in a （Ti,Co）06 distorted octahedron on the spin density and magnetic properties of Co-doped rutile Ti02 dilute magnetic semiconductors. Our calculations suggest that the Vo location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the Vo is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d6（t3g↑, t23g ↓） without any magnetic moment. However, if the Vo is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of Vo. Some positive spin polarization is induced around the adjacent O ions.     

Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.     

Effect of Cu doping on the magnetic and electrical properties of n=2 Ruddlesden-Popper manganates

A series of polycrystalline Cu-doped n=2 Ruddlesden-Popper manganates La1.2Sr1.8CuzMn（2-x）O7 （x=0, 0.04, 0.13） were synthesized by the solid state reaction method. The effect of Cu doping on the magnetic and transport properties has been studied. It is found that Cu substitution for Mn greatly affects the magnetic and electrical properties of the parent phase La1.2Sr1.8Mn2O7. With the increase of Cu content, the system undergoes a transition from longrange ferromagnetic order to the spin glass state and further to an antiferromagnetic order. A little of Cu dopant can lead to the samples showing semiconductor or insulator behaviour in the whole observed temperature range while the parent phase has a metal-insulator transition. These samples show colossal magnetoresistance at low temperatures and the value of it decreases with increasing Cu content.     

不同变掺杂结构GaAs光电阴极的光谱特性分析

为定量研究变掺杂结构对阴极量子效率的作用效果,设计生长了两种不同掺杂方式的反射式梯度掺杂GaAs光电阴极,激活后测量了两者的光谱响应曲线。将光谱响应曲线转换为对应的量子效率曲线,对不同入射光波段的量子效率进行了拟合分析,得到了体现变掺杂结构贡献程度的变掺杂系数K值。研究发现,同一阴极材料对不同波段的入射光,其掺杂结构产生的作用效果各不相同。同时,不同掺杂结构光电阴极对于相同波段范围内的入射光,其作用效果也不相同。产生这些差别的根本原因,是由于不同掺杂结构下,材料中内建电场的位置和强度不同而造成的。该研究为评判不同掺杂方式下光电阴极的结构性能提供了有效的分析手段,对研究阴极变掺杂结构的优化设计具有非常重要的应用价值。     

Transient Reorientation of a Doped Liquid Crystal System under a Short Laser Pulse

The transient optical nonlinearity of a nematic liquid crystal doped with azo-dye DR19 is examined. The optical reorientation threshold of a 25-μm-thick planar-aligned sample of 5CB using a 50 ns pulse duration 532nm YAG laser pulse is observed to decrease from 800 mJ/mm^2 to 0.6 mJ/mm^2 after the addition of i vol% azo dopant, a reduction of three orders of magnitude. When using a laser pulse duration of 10ns, no such effect is observed. Experimental results indicate that the azo dopant molecules undergo photoisomerization from trans-isomer to cis-isomer under exposure to light, and this conformation change reorients the 5CB molecules via intermolecular coupling between guest and host. This guest-host coupling also affects the azo photoisomerization process.     

980 nm脉冲激发下Er3+掺杂材料中4Ⅰ13/2→4Ⅰ15/2跃迁的瞬态行为

在过去的几十年人们对Er3+掺杂的玻璃材料进行了广泛的研究,因为Er3+的4Ⅰ13/2→4Ⅰ15/2跃迁能够给出适合红外光通讯窗口的1.5 μm的发射.据我们所知,目前关于脉冲激光激发下Er3+掺杂材料1.5 μm发射的动力学行为研究报道仍很少.我们引入了转移函数理论,研究了980nm脉冲激发下Er3+的4Ⅰ13/2能级荧光的动力学行为.发现在980nm脉冲激发后,其荧光衰减遵循双指数规律,4Ⅰ13/2能级布居分为指数上升和指数下降两个过程.