Does the beam width affect the generalized M factor of hard-edged diffracted beams?

A detailed study of the generalized M² factor of hard-edged diffracted beams based on the truncated second-order moments method, asymptotic analysis and self-convergent beam width approach is performed. The dependence of the generalized M² factor on the parameters characterizing the spatial profile, and beam truncation, etc. is analyzed.     

Electron–hole recombination luminescence in LiYF4:U single crystal

Photoluminescence (PL), photostimulated luminescence (PSL), thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) studies were carried out on LiYF₄:U⁴⁺ and pure LiYF₄ crystals. The PL and EPR investigations have identified the presence of Eu³⁺, Tb³⁺ and Gd³⁺ ions in both of these crystals possibly due to their existence in the starting materials. The luminescence observed during afterglow, PSL and TSL revealed that emission occurs at wavelength positions 382, 413, 437 and 544 nm, which are characteristic of Tb³⁺ ions. The present investigations using PSL and TSL in combination with PL studies before and after gamma irradiation have revealed that selective energy transfer to Tb³⁺ ions occurs during electron–hole recombination processes like PSL and TSL. Even though other luminescent ions (U⁴⁺ and Eu³⁺) are present in the system and U⁴⁺/U³⁺ ions are participating in electron capture/release processes, the selective energy transfer results in Tb³⁺ ions acting as luminescence centers.     

低阻抗二极管产生的强流电子束能谱分布的数值模拟

 给出了低阻抗二极管产生的电子束能谱分布及外加磁场对二极管阻抗影响的数值模拟研究结果。结果表明，即使在外加电压恒定的条件下，二极管产生的电子束也具有一定的能谱分布，这说明用二极管电压、电流波形计算脉冲电子束能谱分布是不正确的。另外,外加磁场对低阻抗二极管的阻抗特性具有较大影响，其阻抗随外加磁场的增大而减小。分析认为这是由于外加磁场强度的变化改变了二极管中束电子的运动轨迹。当没有外加磁场或外加磁场较小时，低阻抗二极管产生的电子束发生自箍缩，此时二极管电流是自箍缩饱和顺位流；当外加磁场足够强时，电子束的自箍缩被抑制，二极管电流是没有箍缩时的空间电荷限制电流。束电流小于自箍缩临界电流的二极管其阻抗将不随外加磁场的变化而变化。     

射束有效宽度与成像系统MTF关系的研究

射线成像系统的射线有效宽度是评定系统成像分辨率的重要成像指标。以试验的方法,通过测试系统成像的MTF,通过对成像分辨率与射线有效宽度的关系进行研究,为射线数字成像(DR)及工业CT系统设计提供了参考。     

Diffusion of 99Tc in granite under aerobic and anoxic conditions

Summary  Vezetéknév     

Bodies of constant width in arbitrary dimension

We give a number of characterizations of bodies of constant width in arbitrary dimension. As an application, we describe a way to construct a body of constant width in dimension n, one of its (n – 1)‐dimensional projection being given. We give a number of examples, like a four‐dimensional body of constant width whose 3D‐projection is the classical Meissner's body. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Level of nodes in increasing trees revisited

Simply generated families of trees are described by the equation T(z) = ϕ(T(z)) for their generating function. If a tree has n nodes, we say that it is increasing if each node has a label ∈ { 1,…,n}, no label occurs twice, and whenever we proceed from the root to a leaf, the labels are increasing. This leads to the concept of simple families of increasing trees. Three such families are especially important: recursive trees, heap ordered trees, and binary increasing trees. They belong to the subclass of very simple families of increasing trees, which can be characterized in 3 different ways. This paper contains results about these families as well as about polynomial families (the function ϕ(u) is just a polynomial). The random variable of interest is the level of the node (labelled) j, in random trees of size n ≥ j. For very simple families, this is independent of n, and the limiting distribution is Gaussian. For polynomial families, we can prove this as well for j,n → ∞ such that n − j is fixed. Additional results are also given. These results follow from the study of certain trivariate generating functions and Hwang's quasi power theorem. They unify and extend earlier results by Devroye, Mahmoud, and others. © 2007 Wiley Periodicals, Inc. Random Struct. Alg., 2007     

深能级杂质对光导半导体开关非线性特性的影响

建立了非线性GaAs光导开关深能级杂质瞬态模型的基本方程,获得了与实验现象定性吻合的电流输出,给出了平均载流子随时间演化的情况.分析结果表明,在考虑了深能级杂质的俘获、发射和碰撞电离后,有可能对非线性光导开关中发生的一系列现象做出解释,进一步的仔细分析将对非线性光导开关的设计和制作提供理论指导.     

Kinetics and mechanism of the formation of poly[(1,1,3,3-tetramethyldisiloxanyl)ethylene] and poly(methyldecylsiloxane) by hydrosilylation

The kinetics of the formation of poly(carbosiloxane), as well as of alkyl-substituted poly(siloxane), by Karstedt's catalyst catalyzed hydrosilylation were investigated. Linear poly(carbosiloxane), poly[(1,1,3,3-tetramethyldisiloxanyl)ethylene], (PTMDSE), was obtained by hydrosilylation of 1,3-divinyltetramethyldisiloxane (DVTMDS) and 1,1,3,3-tetramethyldisiloxane (TMDS), while alkyl-substituted poly(siloxane), poly(methyldecylsiloxane), (PMDS), was synthesized by hydrosilylation of poly(methylhydrosiloxane) (PMHS) and 1-decene. To investigate the kinetics of PTMDSE formation, two series of experiments were performed at reaction temperatures ranging from 25 to 56 °C and with catalyst concentrations ranging from 7.0 × 10⁻⁶ to 3.1 × 10⁻⁵ mol Pt/mol CHCH₂. A series of experiments was performed at reaction temperatures ranging from 28 to 48 °C, with catalyst concentrations of 7.0 ×10⁻⁶ mol of Pt per mol of CHCH₂, when kinetics of PMDS formation was investigated. All reactions were carried out in bulk, with equimolar amounts of the reacting Si H and CHCH₂ groups. The course of the reactions was monitored by following the disappearance of the Si H bands using quantitative infrared spectroscopy. The results obtained showed typical first order kinetics for the PTMDSE formation, consistent with the proposed reaction mechanism. In the case of PMDS an induction period occurred at lower reaction temperatures, but disappeared at 44 °C and the rate of Si H conversion also started to follow the first-order kinetics. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2246–2258, 2007     

Fully-angular polyhex chains with minimal total π-electron energy

By Hückel molecular orbital (HMO) theory, the calculation of the total energy of all π-electrons in conjugated hydrocarbons can be reduced to that of E(G)=|λ₁|+|λ₂|+?+|λn|, where λi are the eigenvalues of the corresponding graph G. Denote by Ψn the set of all fully-angular polyhex chains with n hexagons. In this paper, we show that Hn has the minimum total π-electron energy among chains in Ψn, where Hn is the helicene chain.