分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的highelectronmobilitytransistors(HEMT)和Pseudomorphichighelectronmobilitytransistors(PHEMT)结构深中心行为.样品的DLTS谱表明,在HEMT和PHEMT结构的nAlGaAs层里存在着较大浓度(1015-1017cm-3)和俘获截面(10-16cm2)的近禁带中部电子陷阱.它们可能与AlGaAs层的氧含量有关.同时还观察到PHEMT结构晶格不匹配的AlGaAsInGaAsGaAs系统在AlGaAs里产生的应力引起DX中心(与硅有关)能级位置的有序移动.其移动量可作为应力大小的一个判据,表明DLTS技术是定性识别此应力的可靠和简便的工具. 关键词： 分子束外延生长 高电子迁移率超高速微结构功能材料 深中心     

薄膜生长荧光显微图像实时采集与分析系统

设计了一套具有一定实用意义和科学价值的薄膜生长荧光显微图像实时采集与分析系统,可以实现透明衬底上有机荧光分子薄膜生长的实时原位监测。进一步阐明了系统的硬件构筑思路和软件设计架构,并依据薄膜的形貌特征,给出8个主要生长信息参数及其求取算法,并利用自行搭建的实验系统,针对联六苯(p-6P)分子在云母衬底上的纳米纤维生长过程,得出了其准一维的线性生长规律。该系统作为重要的薄膜生长成像监测技术,有望在薄膜与衬底表面相互作用和衬底微区结构特性研究等方面起到积极的作用。     

原子表面扩散的对称破缺对二维岛形成的控制

文章阐述了当CO吸附改变时Pt/Pt(111)同质外延单层岛的形状的微观选择机制,即岛的取向由沉积原子的边-角扩散运动的不对称性惟一决定.对没有CO介入的理想真空生长情况,衬底温度不能改变三角形岛的取向.CO的吸附反转了边-角扩散运动的不对称性,从而使岛的取向发生变化.     

Material growth and device fabrication of terahertz quantum-cascade laser based on bound-to-continuum structure

The terahertz quantum-cascade laser （THz QCL） based on bound-to-continuum structure is demonstrated. The X-ray diffraction measurement of the material shows a high crystalline quality of the active region. A THz QCL device was fabricated with semi-insulating surface-plasmon waveguide. The test device is lasing at about 3 THz and operating up to 60 K. It shows a single frequency property under different drive currents and temperatures. At 9 K, the maximum output power is greater than 2 mW with a threshold current density of 159 A/cm2.     

介孔碳材料抑制锂电池负极枝晶生长

为了解决锂电池负极表面锂枝晶生长带来的性能衰退和安全问题。 以沸石咪唑酯骨架-8(ZIF-8)为前驱体制得介孔碳材料(MCM),用于金属锂负极表面改性。 X射线粉末衍射(XRD)和拉曼光谱表明,退火制得的MCM具有一定的石墨化程度,N₂气吸脱附测试(BET)证明MCM具有典型的介孔特征。 对比不同温度退火样品的XRD、拉曼光谱和BET测试结果,确定900 ℃为最佳退火温度。 优化的MCM作为表面改性剂对金属锂负极进行改性研究。 电池充放电循环后,负极样品的XRD和扫描电子显微镜(SEM)测试表明,MCM能够通过均衡锂负极表面的电荷分布抑制金属锂的取向沉积和锂枝晶的生长。 本研究为制备抑制锂电池负极枝晶生长表面改性剂提供了一种简便而有效的合成方法,有利于锂电池循环寿命的延长和安全性能的提高。     

Extinction Effects of Multiplicative Non-Gaussian L′evy Noise in a Tumor Growth System with Immunization

The extinction phenomenon induced by multiplicative non-Gaussian Levy noise in a tumor growth model with immune response is discussed. Under the influence of the stochastic immune rate, the model is analyzed in terms of a stochastic differential equation with multiplicative noise. By means of the theory of the infinitesimal generator of Hunt processes, the escape probability, which is used to measure the noise-induced extinction probability of tumor cells, is explicitly expressed as a function of initial tumor cell density, stability index and noise intensity. Based on the numerical calculations, it is found that for different initial densities of tumor cells, noise parameters play opposite roles on the escape probability. The optimally selected values of the multiplicative noise intensity and the stability index are found to maximize the escape probability.     

金属-半导体异质结构纳米晶的可控制备和光谱调控

本文简要综述了金属-半导体异质结构纳米晶的设计、可控制备和物性研究的相关工作.设计了异相成核与生长、选择硫化和种子介导液相外延生长3种不同的方法并以此制备了多种金属-半导体异质结构纳米晶,对其中所涉及的反应机制进行了论述,并简要探讨了金属-半导体异质结构纳米晶的热稳定性、表面等离子共振活性、荧光特性以及异质界面的电荷转移和保持能力.     

Wrinkling and Growth Mechanism of CuO Nanowires in Thermal Oxidation of Copper Foil

We report a systematic study on wrinkling and CuO nanowires （NWs） growth in the thermal oxidation of copper foil. Copper foils with thickness of 0.5 mm were thermally oxidized in air at 500℃ for 0.5-10 h. It is found that all the samples have wrinkles and the size of the wrinkles increases with the oxidation time increasing. CuO NWs can grow on both the sidehill and hilltop of wrinkle. The CuO NWs on sidehill are longer and denser than those on hilltop. The growth direction of the CuO NWs on sidehill is not vertical to the substrate but vertical to their growth surfaces. The process of wrinkling and CuO NWs growth can be divided into three stages： undulating, voiding, and cracking. The CuO NWs on both sidehill and hilltop grow at the undulating stage. However, only the CuO NWs on sidehill grow and those on hilltop stop growing at the voiding and cracking stages because of the void in hilltop. The local electric field in a wrinkle at undulating stage was calculated, and it is found that the difference of local electric field strengths between hilltop and sidehill is small, which indicates that the predominant driving force for the diffusion of Cu ion during CuO NWs growth is internal stress.     

CuInS2纳米纸阵列薄膜的制备及生长机理

采用溶剂热合成技术,以氯化铜、硝酸铟和硫脲为反应物,十六烷基三甲基溴化铵(CTAB)为阳离子表面活性剂,草酸为还原剂,无水乙醇为溶剂,直接在掺氟的SnO2透明导电玻璃(FTO)衬底上合成CuInS2(CIS)薄膜.采用扫描电子显微镜(SEM)、高分辨率透射电子显微镜(HRTEM)、X射线衍射(XRD)、拉曼光谱、能量色散谱(EDS)、紫外-可见(UV-Vis)反射光谱和透射光谱对样品的形貌、结构、成分和光学性能进行分析.结果表明,在适当的反应物浓度下,在FTO衬底上形成了垂直衬底生长的、具有良好结晶性能的黄铜矿结构的CIS纳米纸阵列薄膜.CIS薄膜中Cu,In,S的原子比为1.1∶1∶2.09,在紫外-可见和近红外波段具有良好的光吸收特性,禁带宽度约1.51 eV.结合不同反应时间制备的CIS薄膜的形貌、结构和成分分析,讨论了CIS纳米纸阵列薄膜的生长机理.     

纳米氧化锌的过饱和控制生长与大小分布控制.

"在非水介质中合成了纳米氧化锌,测定了纳米氧化锌的紫外吸收光谱,并用有效质量模型计算了粒子大小,开发并命名了一种称之为纳米粒子过饱和控制生长的技术,该技术涉及将小的纳米粒子悬浊液加入到大的粒子悬浊液中,结果因为不同大小粒子间的溶解度差异小的粒子将全部溶解,大的粒子将整体长大,大粒子悬浊液的粒子数将保持不变,大粒子的生长速度显著比Ostwald老化的高．该技术最显著的特征是只要最初两悬浊液粒子大小的差异足够大,分布不是太宽,则粒子大小的分布将会因为粒子如此长大而变窄．"