激光等离子体能量角分布及吸收定标律

主要研究激光平面靶等离子体发射能量角分布及吸收定标律。实验利用高斯型1.06μm激光脉冲,其能量为2～50J,脉冲宽度为0.3～2.2ns,靶面平均辐照强度为1.8×1013～1.1x10~(15)W/cm~2,光束以25°角入射。实验采用了Au、Ag、Ti、Al和C_8H_8等厚靶。用等离子体卡计测量靶面吸收的激光能量。用指数函数拟合实验数据,给出了吸收效率分别作为激光强度、脉冲宽度和靶材料原子序数的函数的定标关系式。这些关系式定性地与逆轫致吸收的理论关系式相一致。     

丝阵Z箍缩等离子体内爆过程单丝特性研究

研究了丝阵Z箍缩等离子体内爆过程中单丝行为、物理参数匹配、X射线发射情况。根据丝阵Z箍缩等离子体动力学一维模型研制了相关的计算程序，对单丝的内爆过程进行了数值模拟，对丝阵箍缩匹配关系进行了计算，给出了丝阵初始半径、电流脉冲宽度和峰值电流的匹配关系，同时对丝阵内的最小丝间距、材料的选择等问题进行优化研究。     

一种改进的小波除噪方法用于含噪ICP-AES光谱的处理

提出了一种改进的小波除噪方法。它基于噪声具有频率较高和幅度较小的特点 ,先排除信号中频率较高的成分 ,再丢弃余下的系数较小的成分。对模拟的含噪电感耦合等离子体原子发射光谱 (ICP AES)的处理结果表明 ,该法能克服小波平滑和小波去噪的一些缺陷 ,可去除更多噪声 ,而信号强度不受影响。同时 ,基线变得平坦 ,有利于峰高的定量计算。用该法处理实测ICP AES光谱 ,效果满意。     

Two-Step Growth of MgO Films on Sapphire （0001） Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

We report on the growth of rock salt MgO films on sapphire (0001) substrates by rf plasma-assisted molecular beam epitaxy.A two-step method,i.e.high temperature epilayer growth after low-temperature buffer layer growth,was adopted to obtain the single crystal MgO film.The epitaxial orientation between the MgO epilayer and the sapphire (0001) substrate was studied by using in situ reflection high energy electron diffraction and ex situ x-ray diffraction,and it is found that the MgO film grows with [111] orientation.The role of the low temperature buffer layer in the improvement of crystal quality of the MgO epilayer is discussed based on the cross-sectional scanning electron microscopy.     

喷气Z-pinch高速扫描摄影技术研究

 叙述了高速摄影在阳加速器喷气Z-pinch实验中测量等离子体向心运动时的应用，用高速变像管扫描相机首次拍摄到阳加速器喷气负载为氖气状态下产生等离子体压缩过程的扫描像，该扫描像的时间分辨本领很高,可以观察到等离子体内爆压缩阶段整个过程，测得了该过程的直径随时间连续变化曲线。     

Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature

We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using C12/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between C12 and Ctt4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855nm/min, and the selectivity ratio overSi02 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.     

间接原子发射光谱法测定碘解磷定

研究了等离子发射光谱法间接测定碘解磷定。在pH5．0的溶液中，当四苯硼钠过量时可完全沉淀碘解磷定，在滤液中加入过量的氯化钾沉淀剩余的四苯硼钠，再测定滤液中过量的钾，可以计算得到碘解磷定的含量。方法简单快速，回收率在96％～102％之间，相对标准偏差为1．7％。     

Relaxation of Dense Electron Plasma Induced by Femtosecond Laser in Dielectric Materials

Electron plasma induced by a focused femtosecond pulse （130 fs, 800 nm） in dielectric materials （Soda Lime glass, K9 glass, and SiO2 crystal） is investigated by pump-probe shadow imaging technology. The relaxation of the electron plasma in the conduction band is discussed. In SiO2 crystals, a fast self-trapping process with a trapping time of 150fs is observed, which is similar to that in fused silica. However, in Soda Lime glass and K9 glass, no self-trapping occurs, and two decay processes are found： one is the energy relaxation process of conduction electrons within several picoseconds, another is an electron-hole recombination process with a timescale of lOOps. The electron collision time T in the conduction band is also measured to be in the order of 1 fs in all of these materials.     

液体中激光等离子体冲击波波前传播特性研究及测试

将空气中球对称冲击波衰减波前传播公式推广到非完全中心对称情况，根据对光学阴影法对激光等离子体冲击波波前测试数据的计算分析，提出液体中点源激光等离子体冲击波旋转椭球面波前传播公式.并且用声学方法对水中和酒精中的激光等离子体冲击波波前进行实验测试，结果表明测试结果与计算公式相吻合. 关键词： 激光 等离子体冲击波 旋转椭球面     

厚二氧化硅光波导薄膜制备及其特性分析

以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。研究了薄膜折射率和淀积速率与工艺参量之间的关系，通过棱镜耦合仪、傅里叶变换红外光谱、原子力显微镜等测试手段，分析了薄膜的结构和光学特性。结果表明，实验能快速生长厚二氧化硅薄膜，薄膜表面平整，颗粒度均匀，同时薄膜具有折射率精确可控和红外透射性能好的特点，非常适合制作光波导器件。