上海光源超导波荡器模型机失超保护设计

中国科学院上海应用物理研究所正在研制一台50周期的低温超导波荡器模型机用于上海同步辐射光源装置,磁体绕组采用NbTi超导线,周期长度16mm,磁间隙9.5mm,运行电流为400A,目标峰值磁场0.67T。磁体储能为7.2kJ。为了保证模型机安全稳定的运行,采用基于有限元方法的数值模拟,将50周期磁体简化为绕组模型并分析其失超过程,根据实验与分析结果提出失超保护设计方案。将50周期磁体的上下两部分作为两段,每段通过失超探测仪进行监测,并通过并联背靠背的冷二极管进行保护。为了使设计尽可能简化并限制磁体端部电压,没有采用主动加热器与引能电阻。     

High—Dimensional Integrable Models with Infinitely Dimensional Virasoro—Type Symmetry Algebra

Using every realization of the Virasoro-type symmetry algebra[σ(f1),σ(f2)]=σ(f1f2-f2f1),we can obtain various high-dimensional integrable models under the meaning that they possess infinitely many symmetries,By means of a concrete realization ,many(3 1)-dimensional equations which possess Kac-Moody-Virasoro-type infinite dimensional symmetry algebras are obtained.     

A Simple Method for Generating Discrete Multi-Component Integrable Hierarchy

For M×N spectral matrix, a kind of operation ？ which satisfies combination law （a？b）？c=a？（b？c） is introduced. The discrete multi？component zero-curvature equation is deduced by using the new operation ？, and a simple method for constructing discrete multi-component integrable hierarchy is proposed. As its application, the multi-component Toda hierarchy and its two kinds of integrable couplings are worked out.     

（2＋2）-Dimensional Discrete Soliton Equations and Integrable Coupling System

In this paper, we extend a （2＋2）-dimensional continuous zero curvature equation to （2＋2）-dimensional discrete zero curvature equation, then a new （2＋2）-dimensional cubic Volterra lattice hierarchy is obtained. Fhrthermore, the integrable coupling systems of the （2＋2）-dimensional cubic Volterra lattice hierarchy and the generalized Toda lattice soliton equations are presented by using a Lie algebraic system sl（4）.     

Painleve Integrability of Nonlinear SchrSdinger Equations with both Space- and Time-Dependent Coefficients

We investigate the Painleve integrabiiity of nonautonomous nonlinear Schr6dinger （NLS） equations with both space-and time-dependent dispersion, nonlinearity, and external potentials. The Painleve analysis is carried out without using the Kruskal＇s simplification, which results in more generalized form of inhomogeneous equations. The obtained equations are shown to be reducible to the standard NLS equation by using a point transformation. We also construct the corresponding Lax pair and carry out its Kundu-type reduction to the standard Lax pair. Special cases of equations from choosing limited form of coefficients coincide with the equations from the previous Painleve analyses and/or become unknown new equations.     

Hamiltonian Forms for a Hierarchy of Discrete Integrable Coupling Systems

A semi-direct sum of two Lie algebras of four-by-four matrices is presented, and a discrete four-by-four matrix spectral problem is introduced. A hierarchy of discrete integrable coupling systems is derived. The obtained integrable coupling systems are all written in their Hamiltonian forms by the discrete variational identity. Finally, we prove that the lattice equations in the obtained integrable coupling systems are all Liouville integrable discrete Hamiltonian systems.     

互反型高维可积Kaup-Newell系统

可积系统研究是物理和数学等学科的重要研究课题.然而,通常的可积系统研究往往被限制在(1+1)维和(2+1)维,其原因是高维可积系统极其稀少.最近,我们发现利用形变术可以从低维可积系统导出大量的高维可积系统.本文利用形变术,将(1+1)维的Kaup-Newell(KN)系统推广到(4+1)维系统.新系统除了包含原来的(1+1)维的KN系统外,还包含三种(1+1)维KN系统的互反形式.模型也包含了许多新的(D+1)维(D≤3)的互反型可积系统.(4+1)维互反型KN系统的Lax可积性和对称可积性也被证明.新的互反型高维KN系统的求解非常困难.本文仅研究(2+1)维互反型导数非线性薛定谔方程的行波解,并给出薛定谔方程孤子解的隐函数表达式.     

考虑应力梯度效应的金属微梁屈服模型研究

一系列微加载测试结果表明,金属微梁的弯曲强度会随着材料外部几何特征尺寸的减小而显著升高,呈现出明显的尺寸相关性.基于位错塞积模型,探讨了纯金属单晶微梁的初始屈服应力,并提出了描述其尺寸相关性行为的关键内禀特征长度.通过综合分析现有的微梁弯曲实验及其离散位错动力学数值模拟结果,并考虑到位错-自由表面交互作用的影响,提出了一种仅涉及位错源的位错塞积构型.在此构型下,对线性应力梯度作用下的位错塞积行为进行了连续性分析,并建立了一个由位错源主导的应力梯度屈服模型.该模型有效地解释了微梁初始屈服应力的尺寸相关性,并与实验结果一致.研究结果表明,针对外部几何特征尺寸在数微米及以下的纯金属单晶微梁,位错塞积行为是其尺寸相关性行为的主导机制,而且刻画这种行为需要两个内禀特征长度参数,即位错源长度和位错塞积长度.为解释非均匀加载条件下微尺度晶体材料屈服应力的尺寸相关性行为,特别是纯金属单晶微梁,提供了新的视角.     

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.     

U-纯正半群

型彬半群是正则半群类中纯正半群的一个自然推广．这类半群最先由E1-Qallali和Fountain研究．本文定义了U-纯正半群．这类半群是纯正半群和型W半群二者在U-半富足半群类中的一个共同推广．首先我们确定了U-纯正半群上包含在关系HU中的最小允许同余．借此,证明了半群S为U-纯正半群,当且仅当S可以表示为一个Hall半群和一个V—ample半群的织积．这一结果不仅推广了关于纯正半群结构的著名Hall—Yamada定理,而且推广了E1-Qallali和Fountain建立的型W半群的结构定理．