等度连续与POTP

本文证明了在紧致连通的度量空间中，等度连续的自映射不具有POTP。     

图的边韧性度

文[1]中,定义图G(V,E)的边韧性度定义为min{(|S|+T(G-S))/(ω(G-S)):S?E(G)},这里,T-(G-S)和ω(G-S)分别表示G-S中最大分支的顶点数和连通分支数.这是一个能衡量网络图稳定性较好的参数,因为它不仅考虑到了图G-S的分支数也考虑到了它的阶数.在以前的工作中,作者得到了边韧性度图的一个充要条件.利用这些结果证明了K-树是严格边韧性度图,并找到了边韧性度与较高阶的边坚韧度和边坚韧度之间的关系.     

暗中空光束角动量与中性原子的相互作用及其应用

综述了暗中空光束自旋与轨道角动量的一些性质及其与中性原子之间的相互作用,并简单介绍了暗中空光束及其角动量在原子光学和玻色_爱因斯坦凝聚(BEC)以及各种原子光学器件研制方面的应用.     

不确定度在大学物理实验中的应用

介绍了不确定度计算的有关概念 ,并根据大学物理实验的特点 ,给出了不确定度的简化计算方法。     

图的度序列不等式

用代数的方法证明了有关图度序列的几个不等式，并且得到了其相应的极图。     

Evolution of Weighted Networks by Duplication-Divergence Mechanism

The duplication and divergence process is ubiquitous in nature and man-made networks. Motivated by the duplication-divergence mechanism which depicts the growth of protein networks, we propose a weighted network model in which topological evolution is coupled with weight dynamics. Large scale numerical results indicate that our model can naturally generate networks with power-law-like distributions of degree, strength and weight. The degree-strength correlation is illustrated as well. These properties are in agreement well with empirical data observed in real-world systems. Furthermore, by altering the retention probability δ, weighted, structured exponential networks are realized.     

400GeV/c pp碰撞半单举带电粒子赝快度分布测量

利用CERN NA27合作组提供的LEBC泡室照片,测量了400GeV/c pp碰撞产生的带电粒子多重数为8—12的赝快度分布,并用结团模型分析了在固定总多重数时质心系前向半球的多重数分布.结果表明结团的平均大小与是否考虑领头粒子效应有关.     

误差杆的概念及其应用

介绍了误差杆的概念及其在实验作图中的应用。     

氩等离子体物态方程的TF简化模型

对于高温高压下氩等离子体的电离度和物态方程,本文给出了一种基于Thomas-Feimi(TF)统计模型的简化计算新方法:首先将TF模型电离势的数值结果进行函数逼近,给出一个便于数值求解的计算电离度的近似计算方法,并由此计算了局部热动平衡下的氩等离子体在10～1000 eV高温范围内的物态方程.计算结果与国外报道的其他几种理论模型的计算结果均符合很好,与实验值也吻合较好.本文所提出的简单模型也适用于计算混合物物态方程,可以在电磁发射技术领域中的强电离等离子体中有更为广阔的应用前景.     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.