双障碍问题阻尼牛顿法的二阶收敛性

本文研究由双障碍问题导出的一类B可微函数的性质，并在一定条件下证明了求解相应的B可微方程阻尼牛顿法的全局收效性和二阶收效性．数值例子表明这一算法是有效的．     

在高压下双原子分子的行为

位于美国华盛顿洲的Carnegie研究所的A．Goncharov教授的他的合作者美国Lawrence Livermore国家实验室的J．Crowhurst教授共同进行了一项实验．他们将许多种类的双原子分子，例如氢、氘和氮等挤压人一个菱形的砧格内，然后观察它们在高温高压下的行为．在实验中他们不断地改变温度与压强这两个参数，使分子样品常常可以从流体转变为晶体，或者反过来从晶体变为流体，甚至于让整个分子解体．他们的具体实验手段是利用近红外激光对样品加热，再利用拉曼光谱仪来测定分子在各种条件下的量子振动激发态，并细缄地记录下各条谱线的频率与伸缩模的线宽。     

函数的双参数平均的几个性质

对于函数 f(x) q的双参数平均 Mp,q(f;a,b) ,证明当 f(x)为单调函数时它是 a,b的单调函数 ;当f (x)不是常量时它是 p,的严格增函数     

对合的分解

Using the notion of biconnected sum we define the biconnected sum (T₁, M₁)§(T₂,M₂) of two involutions (T1M1) and (T2,M2) which is an involution on the biconnected sum M₁,§M₂. A connected involution is said to be reducible if it can be expressed as a biconnected sum of two connected involutions.Theorem Each connected involution (T, M) can be decomposed into a bi-connected sum of connected irreducible involutions (T, M)=(T₁, M₁)§…§(T_q,M_q),and (?) where the coefficients of H_{n_1}(M) are in Z/2 Z if M is unoriented, in Z if is oriented .     

Hopf代数上的扭曲模和(斜)余配对Hopf模

本文第一部分主要把扭曲的方法运用到模上,从而得到扭曲模．作为特例,我们构造了H  M的Smaush模和量子模．当K是有限维Hopf代数,证明K*  M是一个右D(K)-Hopf模,因此得到了一个基本同构定理．第二部分主要把斜余配对双代数进行推广,得到了斜余配对Hopf模,并且给出判断斜余配对Hopf模的一个充要条件．     

基于遗传禁忌算法的双资源约束下并行生产线调度研究

并行生产线调度问题兼有并行机器和流程车间调度问题的特点,是一类新型的调度问题。在考虑遗传算法早熟收敛特性和禁忌搜索法自适应优点的基础上,将遗传算法和禁忌搜索法结合起来,提出了基于遗传算法和禁忌搜索算法的双资源并行作业车间的调度优化问题算法,即考虑到了产品的调度受到机器、工人等资源制约的影响,对算法中种群的构造,适应度计算,遗传操作等方面进行了研究,最后给出了实例仿真和结论。     

Magnetic Properties of Hf0.8Ta0.2（Fe0.97A0.03）2 （A=Al, Co, Mn） Systems

Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.     

Construction of 2Ⅲ^[m-（m-k）] Designs with the Maximum Number of Clear Two-factor Interactions

It is useful to know the maximum number of clear two-factor interactions in a_Ⅲ~(m-(m-k))design.This paper provides a method to construct a 2_Ⅲ~(m-(m-k))design with the maximum number of clear two-factorinteractions.And it is proved that the resulting designs have more clear two-factor interactions than thoseconstructed by Tang et al.Moreover,the designs constructed are shown to have concise grid representations.