Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

Theory and Application of Characteristic Finite Element Domain Decomposition Procedures for Coupled System of Dynamics of Fluids in Porous Media

For a coupled system of multiplayer dynamics of fluids in porous media,the characteristic finiteelement domain decomposition procedures applicable to parallel arithmetic are put forward.Techniques suchas calculus of variations,domain decomposition,characteristic method,negative norm estimate,energy methodand the theory of prior estimates are adopted.Optimal order estimates in L~2 norm are derived for the error inthe approximate solution.     

荧光XAFS研究Si可稀浓度杂质的区域结构

荧光ＸＡＦＳ研究Ｓｉ晶体中等电子，缺电子和富电子杂质原子的区域环境结构。结果表明杂质原子的电子构型决定了杂质原子对Ｓｉ区域晶格形变的影响。相对于共价键长ＲＳｉ－Ｓｉ（０．２４０ｎｍ）来说，富电子杂质Ａｓ导致Ｓｉ晶格在Ｓｉ（１１１）方向的ＲＡｓ－Ｓｉ键长产生０．００４ｎｍ的反应增长，等电子杂质Ｇｅ的Ｒ－Ｇｒｅ－Ｓｉ和缺电子杂质Ｇａ和ＲＧａ－Ｓｉ键长收缩０．００２ｎｍ。     

线性时滞系统实用稳定性的一个简明判据

利用比较的方法，获得了线性时滞系统实用稳定性的一个简单判定定理．     

氧化苯乙烯和氧化二苯乙烯的区域选择性和立体选择性开环

本文报道 NaBH_4-CoCl_2可使氧化苯乙烯类化合物发生区域选择性开环,主要生成β-苯乙醇衍生物。对于氧化二苯乙烯类化合物,由于受到苯环的空间阻碍,使其开环能力减弱,如反式氧化二苯乙烯比顺式异构体更难于开环。     

N-烯基硝酮分子内环加成反应区域选择性的理论研究 3:N-4-甲基-4-戊烯基硝酮分子内环加成反应的区域选择性

N-4-甲基-4-戊烯基硝酮分子内环加成反应可以生成氧桥型(Pa)和碳桥型(Pb)两种产物, 其实验产率比约为8:1。而在N-4位未取代的情况下, Pa与Pb的实验产率比约为1:2。可见N-4-甲基使得区域选择性发生了很大的变化。本文用AM1 MO方法和过渡状态理论研究了N-4-甲基-4-戊烯基硝酮分子内环加成反应的机理。计算了两个平行反应(a, b)的速率常数的比值, 得到与实验吻合的结果。计算表明, N-4-甲基取代后, a, b两反应的活化熵的相对变化是区域选择性改变的主要因素, 活化焓的相对变化只是一个次要因素。     

烯胺酮与烯胺酯的交叉缩合反应及自缩合反应的区域选择性研究

烯胺酮与烯胺酯以(3C+3C)缩合反应形成多取代芳环化合物,具有区域选择性。用波谱和 X-射线衍射技术确定了产物的结构,讨论了反应机理。     

稀土防止高铅青铜偏析的研究

研究了混合稀土对高铅青铜(ZQPb25-5)中铅偏析的影响。结果表明,0.5～1.0％混合稀土能有效地防止铅的比重偏析和逆偏析。文中对比了稀土与镍防止铅偏析的效果。稀土在高铅青铜中主要以化合物形态分布在铜的基体上,促使α枝晶细化并提早析出,从而抑制富铅溶体的下沉及表逸,导致铅偏析倾向明显减弱。适量稀土还可以提高合金的力学性能,尤其是塑性。此外,稀土可部分替代合金中锡的含量。     

手性5-l-(艹孟)氧基丁内酯并[3,4-d]-3-取代基-异(口恶)唑啉类化合物的合成

研究了手性元5-(R)-(l-(艹孟)氧基)-2(5H)-呋喃酮与取代苯甲醛肟以次氯酸钙作为氧化剂进行的区域选择性原位1,3-偶极环加成反应,同步生成两个新的手性中心,得到了一系列光学纯丁内酯并[3,4-d]-3-取代基-异(口恶)唑啉类化合物;应用波谱学手段及X射线单晶衍射法确证了产物的绝对构型,并对产物的核磁共振氢谱规律性加以总结.